T022Q Search Results

2sc2810

Abstract: sanken transistor
Contextual Info: SANKEN ELECTRIC CO LT» SSE D • 7 ^ 0 7 4 1 G O ü O ' m IDI H S A K J Silicon NPN Triple Diffused Planar - - o ☆High Voltage Switching Transistor 2SC2810 ^ i ' Application Example : eOutline Drawing 1 Switching Regulator and General Purpose * ••■•MT-25 T022Q

Contextual Info: SANKEN ELECTRIC CO LTD 55E » • 7 ^ 0 7 4 1 OOGCHHô Û57 « S A K J Silicon NPN Triple Diffused Planar T - 3 2 rC P \ ☆ Complement to type 2SA 12 6 2 2SC3179 Application Example : • Outline Drawing 1 .MT-25 T022Q A u d io and General P urp ose

BI 370

Abstract: TO220-3LD T0-220 0C99
Contextual Info: Package Dimension T0220-3LD T022Q-3L PACKAGE OUTLINE DIMENSIONS D _ cl m bl Al el Sym bol D im e n s io n s n M illim e te rs D i m e n s i o n s In I n c h e s Min Max M in Max A 4 .470 4.670 0.176 0.184 A1 2 .520 2.820 0.C9 9 0 1 11 I 0.710 C.910 0.C2B

Q400414

Abstract: 06040J7 TO810MH q2006l5 triac Q2008F51 Triac SC141D L201E5 SC136B L4004F91 T6401M
Contextual Info: LORAS INDUSTRIES ITrms Amps PART No. INC 42E VDRM IDRM Volts mAmps PACKAGE Q1 D 5500440 TRIAC IGT Q2 Q3 mAmps DOOOODt. T IL O R A “T - 2 5 ' O Î VGT Volts Q4 Ih mAmps ITM Amps VTM Volts 0.6 Amps ITrms TO-92 Package MAC974 MAC976 0.6 0.6 MA0&7fr " : MAC97A3 "•

1RF540

Abstract: 1RF620 1RF640 IRF614 IRF540 RF543 1RF530 IRF530 LM3661TL-1.25 IRF533
Contextual Info: - £> tt £ f m * V Vd s € £ eg. tS Ta=25*0 Vg s Id Pd V g s th) loss Igss or * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s (V) (Q) *typ (A) Id (A) Vg s (V) *typ (S)

IRF3205

Abstract: IRF3205 E IRF3205 IR MOSFET IRF3205 irf3205 MOSFET
Contextual Info: International lü Rectifier PD - 9.1279C IRF3205 PRELIMINARY HEXFET Power MOSFET • • • • • • Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vdss = 55V

1RF530

Abstract: 1RF540 1rf520 RF543 IRF530 IRF532 IRF533 IRF541 IRF542 IRF543
Contextual Info: - f * m V Vd s £> tt £ £ Vg s eg. tS Ta=25*0 Id Pd V g s th) loss I gss or € * Vdg Hr (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) Ciss g fs Coss ft & 11 m Vg s =0 (max) *typ V g s ( Q ) (V) *typ (A) Id (A) Vg s (V) *typ (S)

2SC1817

Abstract: TRANSISTOR PJ
Contextual Info: S El ivi i C O N D U C T O R l TEI' .i l'nTIVTP, RP POWER TRANSISTOR t * 2SC1817 is de sign od for ilF.and VHP Power Amplifier. 'Applications. Most useful for 1 2 - w a t t SSß C i t i z e n s Ba nd Transceiver O u t p u t Stage. 1„ Featui'es / , 15 W min.

10150 CT

Abstract: schottky mbr MJFR MBR1015OCT MBR10200CT MBR1035CT Scans-008335
Contextual Info: E MBR1035CT - MBR10200CT TAIWAN SEMICONDUCTOR 10.0 AM PS . Schottky Barrier Rectifiers RoHS T0-22QAB CO M PLIANCE - . . 1 Features <• P la s tic m £ te ria l used c s rrie a U n d e rw rite rs Lab o ra to ry C la s s ific a tio n s 9 4 V -0 M alar s ilico n ju n c tio n , m ajority c a rrie r cond u c tio n

2SC4630LS

Abstract: 2SC4631LS 2SC4632LS 2SC4633LS 2SC4634LS 2SC4635LS 2SC4636LS 2SC4637LS 2SC4710LS T0-126ML
Contextual Info: SAflYO T r a n s i s t o r s f o r V e r y H i g h - D e f in i t i o n C R T D i s p l a y H o r i z o n t a l D e f l e c t i o n O u t p u t U s e 3 afci D y n a m i cs F ' o c s t j i s U s e ( N o p i c t u r e e v e r o u t of f o c u s w i t h b e t t e r f o c u s c h a r a c t e r i s t i c s )

2SB1232

Abstract: 2SB1240 2SB1255 2SB1223 2SB1224 2SB1225 2SB1226 2SB1227 2SB1228 2SB1229
Contextual Info: - 82 - 5 Ta=25cC, *EPteTc=25'C Vcso Vc e o (V) (V) fu (A) (W) fó 4# tt (Ta=25'C) [*EP (3typ{È] hp Pc* (max) (uA) <W) VcB (V) (min) (max) Vc e (V) Ic/ I e (A) (max) (V) ' , —' (V) le (A) Ib (A) PD -70 -60 -4 2 20 -100 -40 2000 -2 -2 -1.5 -2 -2 -0.004

IRF 850 mosfet

Abstract: Mini size of Discrete semiconductor elements 2SJ335 cp 035 sanyo CP 022 ND fa214 8ROM 2SK2637 marking 85m ok 2SJ382
Contextual Info: Medium Output Power MOSFETs l N ew P a d o - g e : T S S O P 8 *0ne size sm aller than S0P8. Best su ited fo r higher performance and effic ie n c y of battery-pow ered equipment and av ailab le fo r h igh-density surface mount. S O P S ^Reduced surface mount area by 502 and thickness by 30Z over the SC-63(TP).package.

insb

Abstract: Hall Sensor insb HALL ELEMENT SHS361
Contextual Info: T - .33-01 SANYO SEMICO NDUCTOR CORP DIE » 7 1 1 7 0 7 t DDQSSlfc 4 | " P a s - oi BIDIRECTIONAL THYRISTORS P \ V rm(V loo' ^A) 0.5 t - o i - an . ’200 ' DTA05B : •Vêt • : % imA) (vj;. Package . DTA05E 15 2.3 T092 DTA08E 10 1.5 T092 DTA1C DTA1E

ta7317

Abstract: TA7311
Contextual Info: I Power Transistore 2N5490-2N5497 353 7 HHAS File N um ber HARRIS SEMICOND SECTOR 27E I> M302271 G 0 n ò 7 M TERMINAL DESIGNATIONS Silicon N-P-N VERSAWATT Transistors G e n e r a l-P u rp o s e T y p e s fo r M e d iu m -P o w e r S w itc h in g an d A m p lifie r A p p lic a tio n s

T0220 PACKAGE buk553

Abstract: BUK553-50A BUK553-50B T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE SSE D • bbSBTBl OaSObaO =1 PowerMOS transistor Logic Level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

LT 076

Abstract: 0594 um18a xy 801 ic equivalent de LT1074
Contextual Info: r r u TECHNOLOGY v m _ L T 1 Q 7 4 / L T 1 0 7 6 S te p -D o w n S w itc h in g R e g u la to r FCATURCS • ■ ■ ■ ■ ■ ■ ■ 5A On-Board Switch LT1074 100kHz Switching Frequency Greatly Improved Dynamic Behavior Available in Low Cost 5 and 7-Lead Packages

IRF744

Abstract: IRFBC10LC irf630 irf640 IRFZ44 MOSFETs IRF1310
Contextual Info: International H EXFET liO R lR e c t i f i e r t o - 22oab Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. T0-22QAB N-Channel - “ Low Charge” V BR oss Part Number Drain-to-Source RDS(on) Iq Continuous

3866S

Abstract: transistor a999 bs 7818 -1995 transistor tt 2206 A999 transistor TT 2206 transistor a1535A 8340UAS transistor 3866S 2SD 4515
Contextual Info: H Integrated Circuits MOS LSIs Page MOS LSI Type No. Page Type No. Page Type No. Page Type No. Page M N 171608 42 A M N 18P73210 43 M N 3210 69 M N 5179/H 91 M N 171609 42 AM N 18P73215 43 M N 3214 69 MN5181 91 M N 3102 69 M N 53 00 0 Series 55 M N 33 00 Series

buk7530-55

Abstract: mosfet-n SOT166 TOPFET buk7530
Contextual Info: SELECTION GUIDE Page TOPFETs 14 PowerMOS Transistors 16 Insulated Gate Bipolar Transistors 23 Philips Semiconductors TOPFETs VDS Selection Guide @ID FUSION O) (V) (A) Id w Pd (W) TYPE NUMBER TECHNOLOGY ENVELOPE 50 0.028 25 50 125 BUK106-50L TOPFET SOT263

Contextual Info: r r u n m _ LT1581/LT1581-2.5 TECHNOLOGY 1OA, Very Low D ro p o u t R egulator KfìTUlKS DCSCRIPTIOn • Low Dropout, 430mV at 10A Output Current ■ Fast Transient Response ■ Remote Sense ■ 1mV Load Regulation ■ Fixed 2.5V Output and Adjustable Output

TO-32-070

Abstract: 2SA1678 FC102 2SC4449 2SA1416 2SJ193 2sk283 2sC4106 application notes 2SC3383 FC124
Contextual Info: Transistors with Built-in Resistors Absolute maximum ratings Device Package typ» Application te Vcso V Vceo Vebo (V) (V) (mA) Pc (mW) Electrical characteristics (T, = 25 deg. C) IcBQ max # Vc b Ti «les- Ci Ic b o max m hfE & Vce ic Vc b (V) hfH Vce (V)

Contextual Info: Ordering number : EN2498 No.2498 SMlYO i S B 1 0 0 - 0 9 J Schottky B arrier Diode Twin Type Cathode Common 90V, 10A R e c t i f i e r Applications . High frequency rectification (switching regulators, converters, choppers) Features . Low forward voltage (Vpmax=0.85V)

T1P132

Abstract: TIP135 texas tip 132 *P131 opto
Contextual Info: TE X A S I N S T R -COPTO} 8961726 TEXAS bä INST R DE § flit,17 2b OPTO 62C □ □ 3 b *=]□b 36906 TIPI 30, TIPI 31, TIPI 32 N-P-N DARLINGTON SILICON POWER TRANSISTORS R EV ISED O CTOBER 1984 • Designed For Complementary Use With TIP135, TIP136, TIP137

motorola transistor dpak marking

Abstract: CASE 77 case77 DPak Package size AR145
Contextual Info: AR145 Rev 1 DPAKTHE POWER PACKAGE FOR SURFACEMOUNT APPLICATIONS By Dave Hollander Motorola Inc. Phoenix, AZ Reprinted by permission of POWERTECHNICS September 1985,. 1985, Darnell Research Inc. All Rights Reserved. MOTOROLA Semiconductor Products Inc. P.O. BOX 20912 • PHOENIX, ARIZONA 85036