SK12100C
Abstract: SK1240C 1270C
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-1200-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-22OAB PACKAGE Low switching noise FULLY INSULATED PACKAGE A
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Original
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SBDT-1200-1B
O-22OAB
SK1240C
O-220
SK1240C-1250C
SK1260C-1270C
SK12100C
97bsbdt12
SK12100C
SK1240C
1270C
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PDF
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-1200-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 12 AMP SCHOTTKY BARRIER RECTIFIERS MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-22OAB PACKAGE Low switching noise
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Original
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SBDT-1200-1B
O-22OAB
SK1240C
O-220
97bsbdt12
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PDF
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP. Data Sheet No. SBDT-1200-1B 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 MECHANICAL SPECIFICATION FEATURES ACTUAL SIZE OF TO-22OAB PACKAGE Low switching noise FULLY INSULATED PACKAGE A
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Original
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SBDT-1200-1B
O-22OAB
SK1240C
O-220
SK1240C-1250C
SK1260C-1270C
SK12100C
97bsbdt12
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PDF
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B0719
Abstract: BU4080 G80120 2N5849 2SC3254Q 2S0635 2N6455 2S0119 2SC793 BU6070
Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 40 45 50 2SC2654K 2SC2654J 2N5490 2N5491 2N5494 2N5495 2So124AH RCA1C05 40875 2SC521A 2S01061 2S01063 2S01363 2S01412 1001412 ID0553 2So1905 2S05530 60 65 70 75 80 90 95 926 l.inmson~eml 2So125AH
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Original
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BU4080
BU606
O-220var
O-220AB
O-220
B0719
G80120
2N5849
2SC3254Q
2S0635
2N6455
2S0119
2SC793
BU6070
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PDF
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bot64
Abstract: B0698 BOW84 B064S BOW94A bot62 2ns04 BOX54A 11J2
Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) hFE Min fT Max (Hz) ICBO Max (A) t, Max (.) t, Max TOper (.) (Oe) Max Package Style PNP Darlington Transistors, (Co nt' d) 5 10 MJE1091 MJE1091 MJE1091 MJE2090 MJE2091
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Original
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MJE1091
MJE2090
MJE2091
BOW64A
BOW24A
220AB
bot64
B0698
BOW84
B064S
BOW94A
bot62
2ns04
BOX54A
11J2
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PDF
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Untitled
Abstract: No abstract text available
Text: HAFRFRIS S E M I C O N D U C T O R HGTD7N60C3, HGTD7N60C3S, HGTP7N60C3 14A, 600V, UFS Series N-Channel IGBTs January 1997 Packaging Features j e d e c t o - 22oab • 14A, 600V at Tc = 25°C • 600V Switching SOA Capability • Typical Fall T i m e . 140ns at T j = 150°C
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OCR Scan
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HGTD7N60C3,
HGTD7N60C3S,
HGTP7N60C3
22oab
140ns
HGTD7N60C3S
HGTP7N60C3
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IRF744
Abstract: IRFBC10LC irf630 irf640 IRFZ44 MOSFETs IRF1310
Text: International H EXFET liO R lR e c t i f i e r t o - 22oab Low charge HEXFETs reduce gate charge by 40% or more and capacitances by up to 85% without any added device cost. T0-22QAB N-Channel - “ Low Charge” V BR oss Part Number Drain-to-Source RDS(on) Iq Continuous
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OCR Scan
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22oab
T0-22QAB
IRF740LC
IRF840LC
IRFBC40LC
IRFBC10LC
T0-220AB
O-22QAB
IRFZ46
IRF1010
IRF744
IRFBC10LC
irf630 irf640
IRFZ44 MOSFETs
IRF1310
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PDF
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AC16F
Abstract: triac t 444 AC16DGM AC16EGM AC16FGM H150
Text: Thyristors AC16DGM,AC16EGM,AC16FGM 16 AC16r A "E — ;U K T R IA C A v~ 6oo K T R IA C T ”, v ^ •3 fé ^ K # ÌÌ t t 0 10.5 MAX. ft $ o T O -22OAB Y — X c o tz tö 'M m s T k f fä M i- ic o 0 i t , i tzM M 0 3.6 4.8 M A X . W- Kä* ' 1.4 1.4 fé'ê-ffi.JSTj = 125 “C -X s'h >) M M s f CO g È J t ^ 'ï S t^o
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OCR Scan
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AC16r
O-220AB
UL94V-0)
AC16DGM
AC16EGM
AC16FGM
AC16F
triac t 444
H150
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PDF
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Untitled
Abstract: No abstract text available
Text: • HITACHI 2S B 1078 K SIL IC O N P N P EPITAXIAL LOW F R E Q U E N C Y P O W E R A M PL IFIE R . C O M PLE M E N TA R Y PAIR W ITH 2 S D 1 3 7 7 ! Ba«r 2 Colletiof ’S Fjniwr iDimfu«k>ni in mm} JEDEC TO-22OAB ■ ABSOLUTE MAXIMUM RATINGS iT a= 25°0
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OCR Scan
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O-22OAB)
2SB107SK
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PDF
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IRF710
Abstract: 1RF710 2N40 TT 2158 IRF710-713 MTP2N35 MTP2N40 Ac,713
Text: 3469674 FAIRCHILD SEMICONDUCTOR A4 -—- y.OOSTlULi ¿!^q J/LB d 4 b [ib74 IRF710-713 T MTP2N35/2N40 N-Channel Power MOSFETs, 2.25 A, 350-400 V £ Û S S Ü ii£ A Schlumberger Company Power And Discrete Division
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OCR Scan
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MTP2N35/2N40
O-220AB
IRF710/712
MTP2N40
IRF711/TO
IRF710-713
IRF710-713
0087m.
IRF710
1RF710
2N40
TT 2158
MTP2N35
Ac,713
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PDF
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JE15030
Abstract: JE15031 JE-15028 je15029 15029 MJE16028 JE-1502 JE15028
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN M JE15028* M JE15030* PNP M JE 15029* Com plem entary Silicon Plastic Power Transistors . . . designed for use as high-frequency drivers in audio amplifiers. • DC Current Gain Specified to 4.0 Amperes hpE = 40 Min @ lc - 3.0 Ade
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OCR Scan
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MJE15028,
MJE15029
MJE15030,
MJE15031
-22OAB
MJE15028
JE1S030M
JE15029
MJE1S031
MJE15029
JE15030
JE15031
JE-15028
15029
MJE16028
JE-1502
JE15028
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PDF
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pj 67 diode
Abstract: pj 69 diode irf644 IRF64 pj 59 diode IRF645 IRF 54 pj 83 diode PJ 74 rectifier diode for max 250v 1.5A
Text: HE 0 | MÖSS4S2 □□□ÖS12 a I Data Sheet No. PD-9.527A INTERNATIONAL RE CT IFIER INTERNATIONAL RECTIFIER IO R T-39-15 REPETITIVE AVALANCHE AND dv/dt RATED IR F 6 44 IR F 6 4 5 HEXFET TRANSISTORS ;n N-CHANNEL 250 Volt, 0.28 Ohm HEXFET T0-220AB Plastic Package
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OCR Scan
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T-39-15
O-220AB
C-267
IRF644,
IRF645
0Q0A511
C-268
pj 67 diode
pj 69 diode
irf644
IRF64
pj 59 diode
IRF 54
pj 83 diode
PJ 74
rectifier diode for max 250v 1.5A
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PDF
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TL783C
Abstract: S125V TO-22OAB gssb 251C S125
Text: — 250 — TL783C T I 0-7A w*tff»rsio3ai>'U- x • < o m .tn .X - , 1.25V f r i> 125V M W O fe tt- C > *6 H - c e * ;t C ia 5 g T - # £ . P O iti * S S E -700mA o H J Ì J f E t È * - 1 .2 5 V - 125V O A iJ ^ - 0 .0 0 1 % /V typ o 'J y ;l/fflI E J± "- 7 6 d B typ
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OCR Scan
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TL783C
-700mA
O-22OAB
220AB
500mA,
TL783C
I700mA
15mAS/oâ
rS700jnA
S125V
TO-22OAB
gssb
251C
S125
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