MPF89
Abstract: MPF6659 2 watt fet MPF910 IRFD213 IRFD220 IRFD221 IRFD222 IRFD223 IRFD9110
Text: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) rds (on) @ Package FET DIP P CH TYPES 1 WATT FET DIP N CH TYPES 1 WATT T0226AE N CH TYPES 1 WATT V q S (t/h) ( '0 >DSS V(BR)DSS >GSS C|ss Crss *on 'off pk (A) Min Max Max (V) Min (nA) Max
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IRFD213
IRFD220
IRFD221
IRFD222
IRFD223
IRFD9120
IRFD9121
IRFD9210
IRFD9213
IRFD91103
MPF89
MPF6659
2 watt fet
MPF910
IRFD9110
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N-Channel JFET FETs
Abstract: T072
Text: T emic S e m i c o n d u c t o r s ^ S08 T052 T0220 T0237 T092 <2 lead T092 3 lead) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode (continued) Part N um ber | Vm ¿t- (••) II - «>-•-¿j Î ' ¿.A.: T0226AA (T092) VP0300L -3 0 2.5 -4.5 30 60
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T0220
T0237
T0226AA
VP0300L
BS250
VP0610L
P06I0L
VP0808L
VP1008L
TP1220L
N-Channel JFET FETs
T072
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2410m
Abstract: 0300L 2222LM 0808M 2406M 0201T 0300M 12l 7002
Text: Tem ic S e m i c o n d u c t o r s ^ S08 < > ^ T052 T0220 ^ TO237 T092 2 lead T092 (3 lead) Low-Power Discretes I I % DMOS FETs - Low-Power MOS N-Channel Enhancement-Mode I , Pm Number 14-Pin Sidebraze (P) and Plastic (J) i- V Q 1001J 30 V Q 1001P • ■
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T0220
14-Pin
1001P
1001J
1004J
1004P
L000J
1000P
1006P
T0236
2410m
0300L
2222LM
0808M
2406M
0201T
0300M
12l 7002
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Untitled
Abstract: No abstract text available
Text: B 62 9-97 J310 N -C H A N N EL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXER Absolute maximum ratings at TA * 25°C • OSCILLATOR • VHF/UHF AMPLIFIER Reverse Gate Source Voltage - 25 V Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation
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T0-226AA
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MMBV3700LT1/D SEMICONDUCTOR TECHNICAL DATA High Voltage Silicon Pin Diodes These devices are designed primarily for VHF band switching applications but are also suitable for use in general-purpose switching circuits. They are supplied in a
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MMBV3700LT1/D
MMBV3700LT
MPN3700
200IMUM.
T0-226AC)
b3b72SS
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triac zd 607
Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.
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SG73/D
triac zd 607
1n5204
CA2820 TRW
2N4427 equivalent bfr91
2N6823
842 317 SO8
BD243 PINOUT
BD529
bf506
BF845
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BS170 MOTOROLA
Abstract: T0226 S-60
Text: BS170* CASE 29-04, STYLE 30 TO-92 T0-226AA M A X IM U M RATINGS Rating Symbol Value Unit D r a in - S o u r c e V o lta g e V DS 60 Vdc G a t e - S o u r c e V o lt a g e V GS D r a in C u r r e n t ! 1) 0 .5 'D T o t a l D e v ic e D is s ip a t io n (a T ^ = 2 5 CC
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BS170*
T0-226AA)
BS170
BS170 MOTOROLA
T0226
S-60
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Cross Reference power MOSFET
Abstract: T0-226AE Power MOSFET Cross Reference Guide
Text: Page What's An Enhancement-Mode, Silicon Gate, Power M OSFET?. “Lateral MOSFETs vs. Vertical Devices — the big difference" . What is TMOS? .
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O-220AB
T0-220
O-220
Cross Reference power MOSFET
T0-226AE
Power MOSFET Cross Reference Guide
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V2101
Abstract: diode mv2105 SOT23 package diodes MV2105* equivalent
Text: MOTOROLA Order this document by MMBV2101LT1/D SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diodes These devices are designed in the popular PLASTIC PACKAGE for high volume requirements of FM Radio and TV tuning and AFC, general frequency control and tuning applications.They provide solid-state reliability in replacement of mechanical
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MMBV2101LT1/D
OT-23
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101
V2104
V2101
diode mv2105
SOT23 package diodes
MV2105* equivalent
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Motorola MVAM125
Abstract: MVAM109
Text: MVAM108* MVAM109* MVAM115* MVAM125* SILICON TUNING DIODES . . d e s ig n e d fo r e le c tro n ic tu n in g o f A M re c e iv e rs a n d h ig h cap acita n ce, h ig h tu n in g ra tio a p p lic a tio n s . • H ig h C a p a c ita n c e R atio — C r = 15 M in ,
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MVAM108*
MVAM109*
MVAM115*
MVAM125*
T0-226AC)
MVAM108
MVAM109
MVAM115
MVAM125
Motorola MVAM125
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226AA
Abstract: T0-226AA T0236AB T0226AA
Text: Sm all-Signal Small-Signal DMOS Transistors % T0-236AB SOT-23 T0-226AA (TO-92) 219
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T0-236AB
OT-23)
T0-226AA
226AA
T0-226AA
T0236AB
T0226AA
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transistors BC 557C
Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and
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T0-92
Abstract: No abstract text available
Text: bfiF T> bSOHBQ m General Purpose Amplifiers and Switches continued Devices V CHHsmt) (Volts) Min NPN 30 MPSW01A PHP MPSW51A Min Max NATL SEMICON]) (DISCRETE) fT @ l e,- " », Hf e @ I c •c (mA) Max □ D 3 C1SSE 73T « N S C S mA (MHz) Min M Ì NF (ÍB)
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MPSW01A
NSDU01
PN2222
PN3566
PN3643
PN4141
TN2219
2N4125
BC213
BC214
T0-92
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bc 7-25 pnp
Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30
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1N914
1N4148
1N4150
1N5229
1N5230
1N5231
1N5232
1N5233
1N5234
1N5235
bc 7-25 pnp
transistor bc 7-25
2N5245 transistor
2n3819 cross reference
TO-266AA
2N3904 731
jFET Array
BFR30 "cross reference"
2N5308 cross reference
266AA
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Untitled
Abstract: No abstract text available
Text: B 59 9-97 J232 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR AUDIO AMPLIFIER Absolute maximum ratings at TA= 25'C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Process NJ16
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T0-226AA
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Untitled
Abstract: No abstract text available
Text: B 60 9 -9 7 J304,J305 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXERS • OSCILLATORS • VHF/UHF AMPLIFIERS A b s o lu te m a x im u m ra tin g s a t T A = 2 S ° C Reverse Gate Source & Reverse Gate Drain Voltage - 30 V Continuous Forward Gate Current
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T0-226AA
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Untitled
Abstract: No abstract text available
Text: B 53 9 -9 7 J1 7 6 J1 7 7 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • COMMUTATORS • ANALOG SWITCHES A bsolute m axim um ratin gs at T* = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 30 V Continuous Forward Gate Current
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T0-226AA
Q0G0773
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Untitled
Abstract: No abstract text available
Text: 9 -9 7 B 51 J111, J1 1 2 , J1 1 3 ^ H A N N E ^ iu C O N U U N G n O ^ E L M ^ ^ K A N s is T O R • CHOPPERS • COMMUTATORS • ANALOG SWITCHES Absolute maximum ratings at T* = 2 5 'C Reverse Gate Source & Reverse Gate Drain Voltage - 35 V Continuous Forward Gate Current
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T0-226AA
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Untitled
Abstract: No abstract text available
Text: 9 -9 7 B 49 J108, J109 N - C H A N N E L S IL IC O N J U N C T IO N F IE L D -E F F E C T T R A N S IS T O R • CHOPPERS • COMMUTATORS • ANALOG SWITCHES Absolute maximum ratings at Ta = 25*0 Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
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T0-226AA
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Untitled
Abstract: No abstract text available
Text: B 54 9 -9 7 J 2 0 1 ,J 2 0 2 N -C H A N N E L SILICO N JUNCTION FIELD-EFFECT TRANSISTOR • AUDIO AM PLIFIERS • G EN ER A L PURPOSE AM PLIFIERS Absolute maximum ratings at Ta = 25°C Reverse Gate Source & Reverse Gate Drain Voltage - 40 V Continuous Forward Gate Current
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T0-226AA
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P1086
Abstract: P1087
Text: B 63 9 -9 7 P1086, PI 087 P-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • CHOPPERS • ANALOG SWITCHES Absolute maximum ratings at T* = 25°C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current 30 V 50 mA Continuous Device Power Dissipation
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P1086,
P1087
P1086
T0-226AA
GGG07Ã
P1086
P1087
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BF900
Abstract: TIS69 TIS68 P-Channel Depletion Mosfets BF905 TI570 TIS88 C2T205 TLS160 C2T206
Text: Plastic FET’s « - Case Outlines Dual Gate M osfets for VHF/UHF| N-Channel Depletion Case V (B R )D S min. V B F9 00 C 2 T 204 C2T205 C2T206 X H H H C2T211 C2T212 C2T213 B F9 05
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O-226AA
TIS164
T0226A
TIS68
2XT092
TIS69
TI570
A5T6449
BF900
P-Channel Depletion Mosfets
BF905
TIS88
C2T205
TLS160
C2T206
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Untitled
Abstract: No abstract text available
Text: 8-94 C 2 2N7000 N -C H A N N EL ENHANCEMENT M O D E VERTICAL D M O S FET Absolute maximum ratings at TA = 25°C • FAST SWITCHING • HIGH INPUT IMPEDANCE Drain Source Voltage Gate Source Voltage Continuous Drain Current Maximum Device Power Dissipation Thermal Resistance R thjA
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2N7000
T0-226AA
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mpsh69
Abstract: No abstract text available
Text: • D esigned fo r UHF/VHF A m p lifie r A p p lica tio n s • H igh C urre n t B a n d w id th P roduct f y = 2000 MHz a 10 m A d c MPSH69* CASE 29-04, STYLE 1 TO-92 (T0-226AA M A X IM U M RATINGS Symbol Value Unit Collector-Emitter Voltage Rating v CEO
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MPSH69*
T0-226AA)
mpsh69
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