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    BFR540C

    Abstract: No abstract text available
    Text: SO T2 3 BFR540 NPN 9 GHz wideband transistor Rev. 6 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   


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    PDF BFR540 BFR540 BFR540C

    npd5564

    Abstract: 2N4393 MOTOROLA 2sk194 2sk162 KE4393 2SK146 2sk162 hitachi 2SK147 NPD5566 FET package TO-71
    Text: JUNCTION FET Item Number Part Number Manufacturer V BR GSS IDSS (V) (A) g,. VGS(Off) Min (S) Max Max (V) lass Max (A) Clsa Max (F) PD Max (W) Derate at (WrC) Toper Max (OC) Package Style N-Channel JFETs, (Cont'd) 5 10 2SK364 2SK366 2SK240 2SK431 2SK170 UC704


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    PDF 2SK364 2SK366 2SK240 2SK431 2SK170 UC704 2SK194 ITE4091 ITE4091A npd5564 2N4393 MOTOROLA 2sk162 KE4393 2SK146 2sk162 hitachi 2SK147 NPD5566 FET package TO-71

    Untitled

    Abstract: No abstract text available
    Text: SO T2 3 BFR540 NPN 9 GHz wideband transistor Rev. 6 — 13 September 2011 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features and benefits   


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    PDF BFR540 BFR540

    all transistor data sheet

    Abstract: free download transistor data sheet zo 103 ma CATV amplifier transistor transistor equivalent table RF NPN POWER TRANSISTOR 2.5 GHZ philips satellite systems common emitter amplifier all ic data common collector amplifier circuit designing
    Text: BFR540 NPN 9 GHz wideband transistor Rev. 05 — 1 September 2004 Product data sheet 1. Product profile 1.1 General description The BFR540 is an NPN silicon planar epitaxial transistor in a SOT23 plastic package. 1.2 Features • ■ ■ ■ High power gain


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    PDF BFR540 BFR540 all transistor data sheet free download transistor data sheet zo 103 ma CATV amplifier transistor transistor equivalent table RF NPN POWER TRANSISTOR 2.5 GHZ philips satellite systems common emitter amplifier all ic data common collector amplifier circuit designing

    MARKING bs170

    Abstract: No abstract text available
    Text: A pril 1995 National Semiconductor” BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Deccription Features These N-channel enhancement mode field effect transistors are produced using Nationals proprietary, high cell density, DMOS technology. These products


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    PDF BS170 MMBF170 500mA MMBF170 OT-23, MARKING bs170

    transistor marking ra

    Abstract: No abstract text available
    Text: MMBF170LT1 CASE 318-07, STYLE 21 SOT-23 T0-236AB M AXIM UM RATINGS Rating Symbol Value Unit D ra in -S o u rce V o lta g e VD SS 60 Vdc D ra in G a te V o lta g e Vd g s 60 V dc G a te -S o u rce V olta g e — C o n tin u o u s - N o n -re p e titive <tp $ 50 /is)


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    PDF MMBF170LT1 OT-23 T0-236AB) transistor marking ra

    226AA

    Abstract: T0-226AA T0236AB T0226AA
    Text: Sm all-Signal Small-Signal DMOS Transistors % T0-236AB SOT-23 T0-226AA (TO-92) 219


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    PDF T0-236AB OT-23) T0-226AA 226AA T0-226AA T0236AB T0226AA

    marking 1d4

    Abstract: No abstract text available
    Text: DUAL ZENER DIODES COMMON ANODE, 300mW AZ23 SERIES CASE TYPE; T0-236AB (SOT-23) % Dynamic Resistance Zener Voltage*1* at lz - 5 m A Reverse Voltage at Ir = 100 nA VzV at lz = 5mA t = 1 kHz rg o D1 2.5 . 2.9 7 5 (<83) <500 - 9 . . -4 AZ23-C3 D2 2.8 . 3.2


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    PDF 300mW) T0-236AB OT-23) AZ23-C2V7 AZ23-C3 AZ23-C3V3 AZ23-C3V6 AZ23-C3V9 AZ23-C4V3 AZ23-C4V7 marking 1d4

    bc 7-25 pnp

    Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
    Text: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30


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    PDF 1N914 1N4148 1N4150 1N5229 1N5230 1N5231 1N5232 1N5233 1N5234 1N5235 bc 7-25 pnp transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA

    MV2107

    Abstract: MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1
    Text: SILICON EPICAP DIODES . designed in the popular PLASTIC PA C KAG E for high volum e require­ ments of F M Radio and TV tuning and AFC, general frequency control and tuning applications; providing solid-state reliability in replacement of mechanical tuning methods.


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    PDF MV21XX MMBV21XXLT1 1MV21 40Vdc n/MV2109 MV2107 MV2105* equivalent MMBV2109LT1 equivalent 4j diode MV2113 diode mv2105 MMBV2101LT1 MMBV2104 MV2103 MMBV2103LT1

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAT54LT1 These Schottky barrier diodes are designed tor high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


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    PDF BAT54LT1 OT-23 T0-236AB) DCH3A73

    MBT5551LT1

    Abstract: MBT5551L T0236AB
    Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA High V oltage T ransistors NPN Silicon MMBT5550LT1 MMBT5551LT1* COLLECTOR 3 ‘M otorola Preferred D evice 2 MAXIMUM RATINGS EMITTER Symbol Value Unit Collector-Emitter Voltage Rating v C EO 140 Vdc Collector-Base Voltage


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    PDF MMBT5550LT1 MMBT5551LT1* T0-236AB) 225rola MBT5550LT1 MBT5551LT1 1N914 MBT5551LT1 MBT5551L T0236AB

    KBL 103

    Abstract: D0214AB D0-218AA D0218 T0263AB
    Text: CASEDRAWINGS i\ i C NGi j i\j o i :c 0.034 0.86 0.028(0.71} DIA “T 0 .2 AC, :e i AM.y. 4 W ' t . I.sad ammeter is 0-026(0.66) tc -su fix't 0-023 (0 58) D0-2Q1AD -213AA (GL34) DQ-204AC (DO-15) H DQ-204AL (DO-41) D 0-213AB (GL41) 99 M D0-2Q4AP D 0-214AA (SMB)


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    PDF DQ-204AC DO-15) DQ-204AL DO-41) -213AA 0-213AB 0-214AA D0-214AB -214BA -214AC KBL 103 D0214AB D0-218AA D0218 T0263AB

    DO-219

    Abstract: d0214ac D0-214AC D0214AC SMA D0204AL 204AL
    Text: INTRODUCTION TO ZEN ER DIODES General S em iconductor's Zener Diodes are used as voltage regulators, voltage references and voltage suppressors against ESD threats. Pow er ratings range from 30 0m W to 2W and voltages range from 2.4V to 200V. Typical voltage tolerances are +5%, but tighter tolerances such as ±2% are available. These diodes are available in the


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    PDF DO-35 DO-41 OT-23 OD-323 OD-123 T0-236AB OT-23) DO-219 D0-214AC DO-214AA DO-219 d0214ac D0-214AC D0214AC SMA D0204AL 204AL

    BT2369A

    Abstract: No abstract text available
    Text: MAXIM UM RATINGS Sym bol V a lu e Unit C o lle c to r -E m itte r V o lta g e Rating v CEO 15 Vdc C o lle c to r -E m itte r V o lta g e V CES 40 Vdc C o lle c to r-B a s e V o lta g e V cBO 40 Vdc E m itte r-B a s e V o lta g e Vebo 4.5 Vdc !C 200 m Adc Symbol


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    PDF MMBT2369LT1 MMBT2369ALT1* OT-23 T0-236AB) BT2369A

    1N52xx

    Abstract: D0204AL T0-236AB D0-204Al T0236AB 204AL
    Text: ZENER DIODE SERIES SUMMARY Pmn Device Package mW Zener Voltage Tolerances Zener Voltage Range (Volts) 10% 8% 3% Page 2% AZ23-yxx * T0-236AB (SOT-23) 2.4 . 51 C 64 DZ23-yxx * * TO-236AB (SOT-23) 2.4 . 51 C 72 MMBZ52xxy T0-236AB (SOT-23) 2.4 . 75 B C


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    PDF AZ23-yxx DZ23-yxx MMBZ52xxy BZX84-yxx BZT52-yxx 1N52xx-y BZV55-yxx BZX55-yxx BZX79-yxx MMSZ52xxy 1N52xx D0204AL T0-236AB D0-204Al T0236AB 204AL

    D0213AA

    Abstract: D0204AL G3-64 DO-218AA D0-213AA DO-213AB MELF ITO-22QAB SMA DO-214AB MPG06 T0226AA
    Text: C£ L >G e n e r a l v S e m ic o n d u c t o r PRODUCTPACKAGES . * % TO-22QAC TQ-220AB IT0-22QAC ITO-22QAB 10-263 D;i PAK .x« isUiilJS KBPM GBPC - W . GBPC T0-247AD GB1 wmm$& ^ % DFS % DO-218AA x ASC 00 DO-215AA (SMBG) 00-21 SAB (SMCG) •SPSSiM •


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    PDF ITO-22QAB O-22QAC TQ-220AB IT0-22QAC T0-247AD DO-218AA DO-215AA DO-214AA DO-214AB DO-214AC D0213AA D0204AL G3-64 DO-218AA D0-213AA DO-213AB MELF ITO-22QAB SMA DO-214AB MPG06 T0226AA

    Untitled

    Abstract: No abstract text available
    Text: MAXIMUM RATINGS Symbol Value Unit C o lle cto r-E m itte r V o ltage v CEO 12 Vdc Collector-B ase Voltage VCBO 20 Vdc 'c 100 m A dc Rating C o lle ctor C u rrent — C o n tin u o u s BSV52LT1 CASE 318-07, STYLE 6 SOT-23 T0-236AB THERMAL CHARACTERISTICS


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    PDF BSV52LT1 OT-23 T0-236AB)