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Catalog Datasheet	MFG & Type	PDF	Document Tags
BUZ356 Abstract: No abstract text available Text: N AMER PHIL I P S / D I S CR E T E ObE D PowerMOS transistor • bbS3T31 0014822^2 BUZ356 r=-si-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	PDF	bbS3T31 BUZ356 T0218AA; 0D14flEb T-39-13 tbS3T31 bb53c BUZ356

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BUZ356

Abstract: No abstract text available
Text: N AMER PHIL I P S / D I S CR E T E ObE D PowerMOS transistor • bbS3T31 0014822^2 BUZ356 r=-si-i3 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

OCR Scan

PDF

bbS3T31 BUZ356 T0218AA; 0D14flEb T-39-13 tbS3T31 bb53c BUZ356