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    T 1500 N14 TOF Search Results

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    T 1500 N14 TOF Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    T1500N14TOF Eupec 1.4kV V[drm] Max., 1.5kA I[T] Max. Silicon Controlled Rectifier Scan PDF
    T1500N14TOFVTXPSA1 Infineon Technologies Discrete Semiconductor Products - Thyristors - SCRs - Modules - SCR MODULE 1800V 3500A DO200AC Original PDF

    T 1500 N14 TOF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75332p

    Abstract: 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334
    Text: HUF75332G3, HUF75332P3, HUF75332S3S Data Sheet June 1999 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75332G3, HUF75332P3, HUF75332S3S 75332p 75332S 75332 HUF75332P3 75332G huf75332 HUF75332G3 HUF75332S3S HUF75332S3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Semiconductor Data Sheet March 1999 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 32e-3 52e-2 41e-1 13e-1 83e-2 HUF75344 15e-3

    75339p

    Abstract: TA75339 504E3 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet December 2001 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75339G3, HUF75339P3, HUF75339S3S 97e-2 HUF75339 00e-3 90e-2 95e-3 95e-2 75339p TA75339 504E3 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334

    76132P

    Abstract: HUF76132P3 HUF76132S3S HUF76132S3ST TB334
    Text: HUF76132P3, HUF76132S3S Semiconductor Data Sheet 75A, 30V, 0.011 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs [ /Title These N-Channel power MOSFETs HUF76 are manufactured using the innovative UltraFET process. This 132P3, advanced process technology


    Original     		PDF HUF76132P3, HUF76132S3S HUF76 132P3, 132S3S low30V, 51e-2 03e-2 05e-2 76132P HUF76132P3 HUF76132S3S HUF76132S3ST TB334

    TB370

    Abstract: No abstract text available
    Text: ITF87056DQT TM Data Sheet 5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging TSSOP-8 File Number 4813.3 Features • Ultra Low On-Resistance - rDS ON = 0.045Ω, VGS = −4.5V - rDS(ON) = 0.048Ω, VGS = −4.0V - rDS(ON) = 0.077Ω, VGS = −2.5V


    Original     		PDF ITF87056DQT TB370

    AN7254

    Abstract: AN7260 ITF87056DQT ITF87056DQT2 TB370 625o 67e4
    Text: ITF87056DQT Data Sheet 5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging TSSOP-8 File Number 4813.2 Features • Ultra Low On-Resistance - rDS ON = 0.045Ω, VGS = −4.5V - rDS(ON) = 0.048Ω, VGS = −4.0V - rDS(ON) = 0.077Ω, VGS = −2.5V


    Original     		PDF ITF87056DQT AN7254 AN7260 ITF87056DQT ITF87056DQT2 TB370 625o 67e4

    75344g

    Abstract: 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344g 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    TB370

    Abstract: 67e4 AN7254 AN7260 ITF87056DQT ITF87056DQT2 n2 6346
    Text: ITF87056DQT Data Sheet 5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging TSSOP-8 3 Features • Ultra Low On-Resistance - rDS ON = 0.045Ω, VGS = −4.5V - rDS(ON) = 0.048Ω, VGS = −4.0V - rDS(ON) = 0.077Ω, VGS = −2.5V • 2.5V Gate Drive Capability


    Original     		PDF ITF87056DQT TB370 67e4 AN7254 AN7260 ITF87056DQT ITF87056DQT2 n2 6346

    75339P

    Abstract: TA75339 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334
    Text: HUF75339G3, HUF75339P3, HUF75339S3S Data Sheet June 1999 75A, 55V, 0.012 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75339G3, HUF75339P3, HUF75339S3S 43ucts 75339P TA75339 75339G HUF75339G3 HUF75339P3 HUF75339S3S HUF75339S3ST TB334

    75329p

    Abstract: 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334
    Text: HUF75329G3, HUF75329P3, HUF75329S3S Data Sheet January 2000 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75329G3, HUF75329P3, HUF75329S3S 75329p 75329G 75329S HUF75329G3 HUF75329P3 HUF75329S3S HUF75329S3ST TB334

    75329D

    Abstract: AN7254 AN9321 AN9322 HUF75329D3 HUF75329D3S HUF75329D3ST TB334 RELAY TC1
    Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75329D3, HUF75329D3S 75329D AN7254 AN9321 AN9322 HUF75329D3 HUF75329D3S HUF75329D3ST TB334 RELAY TC1

    75344G

    Abstract: No abstract text available
    Text: HUFA75344G3, HUFA75344P3, HUFA75344S3S TM Data Sheet November 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUFA75344G3, HUFA75344P3, HUFA75344S3S 75344G

    75639p

    Abstract: 75639 75639g 75639S 504E3 TB334 HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST
    Text: HUF75639G3, HUF75639P3, HUF75639S3S Data Sheet October 1999 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.7 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUF75639G3, HUF75639P3, HUF75639S3S 75639p 75639 75639g 75639S 504E3 TB334 HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST

    75639G

    Abstract: 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334
    Text: HUF75639G3, HUF75639P3, HUF75639S3S TM Data Sheet August 2000 56A, 100V, 0.025 Ohm, N-Channel UltraFET Power MOSFETs File Number 4477.8 Features • 56A, 100V These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology


    Original     		PDF HUF75639G3, HUF75639P3, HUF75639S3S 75639G 75639P 75639S HUF75639G3 HUF75639P3 HUF75639S3S HUF75639S3ST TB334

    75333P

    Abstract: HUF75333G3 HUF75333P3 HUF75333S3S HUF75333S3ST TA75333 TB334
    Text: HUF75333G3, HUF75333P3, HUF75333S3S Data Sheet December 2001 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75333G3, HUF75333P3, HUF75333S3S HUF75333 HUF75333S3S 75333P HUF75333G3 HUF75333P3 HUF75333S3ST TA75333 TB334

    75329D

    Abstract: HUF75329D3 AN9321 HUF75329D3S HUF75329D3ST TB334
    Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75329D3, HUF75329D3S 71e-1 26e-2 HUF75329D 80e-3 00e-2 00e-3 60e-2 75329D HUF75329D3 AN9321 HUF75329D3S HUF75329D3ST TB334

    75333p

    Abstract: MOSfet 4362 HUF75333G3 diode 66a TA75333 HUF75333P3 HUF75333S3S HUF75333S3ST TB334
    Text: HUF75333G3, HUF75333P3, HUF75333S3S Data Sheet June 1999 66A, 55V, 0.016 Ohm. N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75333G3, HUF75333P3, HUF75333S3S 43ucts 75333p MOSfet 4362 HUF75333G3 diode 66a TA75333 HUF75333P3 HUF75333S3S HUF75333S3ST TB334

    relay rs-5

    Abstract: AN9322 HRFZ44N TB334 AN7254 AN7260 AN9321 135E3
    Text: HRFZ44N Data Sheet June 1999 49A, 55V, 0.022 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HRFZ44N relay rs-5 AN9322 HRFZ44N TB334 AN7254 AN7260 AN9321 135E3

    Untitled

    Abstract: No abstract text available
    Text: HUFA75639S3R4851 TM Data Sheet November 2000 File Number 4962 56A, 115V, 0.025 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFETs is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per


    Original     		PDF HUFA75639S3R4851

    AN7254

    Abstract: AN7260 ITF87056DQT ITF87056DQT2 TB370
    Text: ITF87056DQT Data Sheet 5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging TSSOP-8 File Number 4813.3 Features • Ultra Low On-Resistance - rDS ON = 0.045Ω, VGS = −4.5V - rDS(ON) = 0.048Ω, VGS = −4.0V - rDS(ON) = 0.077Ω, VGS = −2.5V


    Original     		PDF ITF87056DQT AN7254 AN7260 ITF87056DQT ITF87056DQT2 TB370

    75344G

    Abstract: 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet December 2001 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344G 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    75329D

    Abstract: AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334
    Text: HUF75329D3, HUF75329D3S Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75329D3, HUF75329D3S 75329D AN9321 HUF75329D3 HUF75329D3S HUF75329D3ST TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet June 1999 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75329D3, HUF75329D3S 13e-1 26e-2 HUF75329D 80e-3 00e-2 00e-3 60e-2

    75329d

    Abstract: TA75329 HUF75329D3
    Text: HUF75329D3, HUF75329D3S Semiconductor Data Sheet 20A, 55V, 0.026 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75329D3, HUF75329D3S TA7532HERM2 98e-2 57e-2 13e-1 26e-2 HUF75329D 80e-3 00e-2 75329d TA75329 HUF75329D3