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    philips Electrolytic Capacitor

    Abstract: blf4g20-110b ACPR400 ACPR600 BLF4G20S-110B RF35 Philips Electrolytic
    Text: BLF4G20-110B; BLF4G20S-110B UHF power LDMOS transistor Rev. 01 — 23 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance


    Original     		PDF BLF4G20-110B; BLF4G20S-110B ACPR400 ACPR600 ACPR400 ACPR600 philips Electrolytic Capacitor blf4g20-110b BLF4G20S-110B RF35 Philips Electrolytic

    Untitled

    Abstract: No abstract text available
    Text: BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1:


    Original     		PDF BLA1011-200; BLA1011S-200

    Untitled

    Abstract: No abstract text available
    Text: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250R OT502A

    SMD 0508

    Abstract: BLA1011-200 BLA1011S-200 250 B 340 smd Transistor sym039 SMD0508 NV SMD TRANSISTOR
    Text: BLA1011-200; BLA1011S-200 Avionics LDMOS transistor Rev. 08 — 26 October 2005 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1:


    Original     		PDF BLA1011-200; BLA1011S-200 SMD 0508 BLA1011-200 BLA1011S-200 250 B 340 smd Transistor sym039 SMD0508 NV SMD TRANSISTOR

    Untitled

    Abstract: No abstract text available
    Text: BLA0912-250R Avionics LDMOS power transistor Rev. 2 — 15 October 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250R OT502A

    smd JH transistor

    Abstract: 250 B 340 smd Transistor T491D476M020AS BLA0912-250R J2 JH
    Text: BLA0912-250R Avionics LDMOS power transistor Rev. 3 — 1 December 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250R OT502A smd JH transistor 250 B 340 smd Transistor T491D476M020AS BLA0912-250R J2 JH

    250 B 340 smd Transistor

    Abstract: smd JH transistor BLA0912-250 T491D476M020AS
    Text: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250 OT502A 103itions 250 B 340 smd Transistor smd JH transistor BLA0912-250 T491D476M020AS

    m 110b1

    Abstract: ACPR400 ACPR600 BLF4G20LS-110B RF35 PHILIPS GSM I Q
    Text: BLF4G20LS-110B UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance


    Original     		PDF BLF4G20LS-110B ACPR400 ACPR600 ACPR400 ACPR600 m 110b1 BLF4G20LS-110B RF35 PHILIPS GSM I Q

    T491D226M020AS

    Abstract: T491D476M020AS smd JH transistor
    Text: BLA0912-250R Avionics LDMOS power transistor Rev. 01 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250R OT502A BLA0912-250R T491D226M020AS T491D476M020AS smd JH transistor

    NV SMD TRANSISTOR

    Abstract: philips resistor TRANSISTOR L2 BLA0912-250 T491D226M020AS T491D476M020AS TANTALUM SMD CAPACITOR JTIDS smd transistor w1 gp3511
    Text: BLA0912-250 Avionics LDMOS transistor Rev. 02 — 22 July 2004 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250 OT502A NV SMD TRANSISTOR philips resistor TRANSISTOR L2 BLA0912-250 T491D226M020AS T491D476M020AS TANTALUM SMD CAPACITOR JTIDS smd transistor w1 gp3511

    Untitled

    Abstract: No abstract text available
    Text: BLA1011-200R; BLA1011S-200R Avionics LDMOS transistors Rev. 01 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1.


    Original     		PDF BLA1011-200R; BLA1011S-200R BLA1011-200R 1011S-200R

    Untitled

    Abstract: No abstract text available
    Text: BLA0912-250 Avionics LDMOS transistor Rev. 3 — 26 November 2010 Product data sheet 1. Product profile 1.1 General description Silicon N-channel enhancement mode LDMOS transistor encapsulated in a 2-lead SOT502A flange package with a ceramic cap. The common source is connected to the


    Original     		PDF BLA0912-250 OT502A

    ACPR600

    Abstract: BLF4G10LS-120 ACPR400 BLF4G10-120 philips electrolytic capacitor
    Text: BLF4G10LS-120 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance


    Original     		PDF BLF4G10LS-120 ACPR400 ACPR600 ACPR400 ACPR600 BLF4G10LS-120 BLF4G10-120 philips electrolytic capacitor

    BLF4G22-100

    Abstract: BLF4G22S-100 RF35
    Text: BLF4G22-100; BLF4G22S-100 UHF power LDMOS transistor Rev. 01 — 10 January 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1: Typical performance


    Original     		PDF BLF4G22-100; BLF4G22S-100 BLF4G22-100 BLF4G22S-100 RF35

    enamelled copper wire tables

    Abstract: SMD 0508 SMD0508
    Text: BLA1011-200R; BLA1011S-200R Avionics LDMOS transistors Rev. 01 — 23 February 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz. Table 1.


    Original     		PDF BLA1011-200R; BLA1011S-200R BLA1011-200R 1011S-200R enamelled copper wire tables SMD 0508 SMD0508