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    POWER FIELD-EFFECT TRANSISTOR, 3.2A I(D), 600V, 1.8OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
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    Quest Components SSS6N60 99
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    • 100 $1.5
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    SSS6N Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSS6N55 Unknown FET Data Book Scan PDF
    SSS6N55 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SSS6N55 Samsung Electronics V(ds): 550V I(on): 3.2A N-channel power MOSFET Scan PDF
    SSS6N55A Samsung Electronics N-Channel Power MOSFETS Scan PDF
    SSS6N60 Unknown FET Data Book Scan PDF
    SSS6N60 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    SSS6N60 Samsung Electronics V(ds): 600V I(on): 3.2A N-channel power MOSFET Scan PDF
    SSS6N60A Samsung Electronics N-Channel Power MOSFETS Scan PDF
    SSS6N70A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    SSS6N70A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSS6N70A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    SSS6N80A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    SSS6N80A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSS6N80A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    SSS6N90A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    SSS6N90A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSS6N90A Fairchild Semiconductor Advanced Power MOSFET Scan PDF

    SSS6N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSS6N90A

    Abstract: No abstract text available
    Text: SSS6N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 2.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 900V


    Original     		PDF SSS6N90A O-220F SSS6N90A

    SSS6N80A

    Abstract: sss6n
    Text: SSS6N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 2.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 3.5 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 800V


    Original     		PDF SSS6N80A O-220F SSS6N80A sss6n

    SSS6N70A

    Abstract: No abstract text available
    Text: SSS6N70A Advanced Power MOSFET FEATURES BVDSS = 700 V Avalanche Rugged Technology RDS on = 1.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 4 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 µA (Max.) @ VDS = 700V


    Original     		PDF SSS6N70A O-220F SSS6N70A

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    SSS6N90A

    Abstract: No abstract text available
    Text: Advanced SSS6N90A P o w e r MOSFET FEATURES BV D S S — • A valan che R ugged T ech n o lo g y 900 V 2.3 Q. ■ R ugged G ate O xide T e ch n o lo g y ^D S o n = ■ Lo w e r Input C a pa citance lD = 3.5 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea


    OCR Scan     		PDF SSS6N90A SSS6N90A

    6A 700V mosfet

    Abstract: SSS6N70A 1552Q 700v 4A mosfet
    Text: SSS6N70A A d van ced Power MOSFET FEATURES B ^D SS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ” ^ D S o n = ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |jA (Max.) @ VDS = 700V


    OCR Scan     		PDF SSS6N70A 6N70A 71bm42 0040Sflti 6A 700V mosfet SSS6N70A 1552Q 700v 4A mosfet

    SSS6N60

    Abstract: ADE 443 TI MOSFET 6n60 6n60 K300 SSS6N55
    Text: N-CHANNEL POWER MOSFETS SSS6N55/6N60 FEATU RES • A • • 9 • • • TO-270* Low er Ros com* 1im ffMp ro /Nvo hiAo<4 a i •«eA ru rn••gAgAeAd n eAsAsA inMdrAu••c tiv F es! s w itc h in g tim e s R ugged p o ly s ilic o n g a te c e il s tru c tu re


    OCR Scan     		PDF SSS6N55/6N60 O-270* SSS6N5S6N60 SSS6N55 SSS6N60 SSSSN55 SSSSM60 Tc-25-C Tc-25 ADE 443 TI MOSFET 6n60 6n60 K300

    Untitled

    Abstract: No abstract text available
    Text: Advanced SSS6N90A Power MOSFET FEATURES BVDSS - • Avalanche Rugged Technology Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A Max. @ VDS = 900V ■ Low RDS(ON) : 1.829 £1 (Typ.) cn Lower Input Capacitance ■ CO


    OCR Scan     		PDF SSS6N90A

    700v 4A mosfet

    Abstract: sss6n70a
    Text: SSS6N70A A d v a n c e d Power MOSFET FEATURES bvdss Low RDS on : 1.552 Ct (Typ.) 1.8 Q > • ^DS(on) = II Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 m A (Max.) @ Vos = 700V


    OCR Scan     		PDF SSS6N70A 300nF 700v 4A mosfet sss6n70a

    SSS6N80A

    Abstract: mosfet yb
    Text: Advanced SSS6N80A P o w e r MOSFET FEATURES BV D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance lD = ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea


    OCR Scan     		PDF SSS6N80A SSS6N80A mosfet yb

    VM-50V

    Abstract: No abstract text available
    Text: SSS6N80A Advanced Power MOSFET FEATURES BVDS8 = 800 V • ■ Avalanche Rugged Technology Rugged Gate Oxide Technology ^DS on = lD = 3.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ ■ Lower Leakage Current : 25 M A(M ax) @ VM = 800V


    OCR Scan     		PDF SSS6N80A VM-50V

    Untitled

    Abstract: No abstract text available
    Text: Advanced SSS6N80A Power MOSFET FEATURES - 800 V ^DS on = 2.0 Q. Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V ■ Low RDS(ON) : 1.472 £1 (Typ.)


    OCR Scan     		PDF SSS6N80A

    SSS6N70A

    Abstract: No abstract text available
    Text: Advanced SSS6N70A P o w e r MOSFET FEATURES D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^ D S o n = ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge lD = 4 A ■ E xtended S afe O pe ra ting A rea


    OCR Scan     		PDF SSS6N70A SSS6N70A

    SSS6N90A

    Abstract: No abstract text available
    Text: SSS6N90A A d va n ce d Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology = 2.3 Q ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 3.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V


    OCR Scan     		PDF SSS6N90A t0-220f mJSS6N90A SSS6N90A

    SSS6N60

    Abstract: n-channel 600 volts 250M SS64N55 SSS6N55 ca8a
    Text: N-CHANNEL POWER MOSFETS SSS6N60/55 FEATURES T O -2 2 0 F • Lower R ds <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF SSS6N60/55 SSS6N60 SS64N55 to-220 SSS6N55 0RAIN-T040URCE 002047b n-channel 600 volts 250M ca8a

    SSS6N60

    Abstract: 250M SS64N55 SSS6N55
    Text: N-CHANNEL POWER MOSFETS SSS6N60/55 FEATURES • • • • • • • Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF SSS6N60/55 SSS6N60 SS64N55 O-220F SSS6N55 250M

    Untitled

    Abstract: No abstract text available
    Text: Advanced SSS6N70A Power MOSFET FEATURES - 700 V ^ D S o n = 1.8 Q. BVDSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge lD = 4 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 700V


    OCR Scan     		PDF SSS6N70A

    SD57a

    Abstract: SSS6N80A T0-220F
    Text: SSS6N80A A d va n ce d Power MOSFET FEATURES B V dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = 800 V ^ D S o n = 2 . 0 £2 lD ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 \tf\ (Max.) @ VDS = 800V


    OCR Scan     		PDF SSS6N80A T0-220F b4142 SD57a SSS6N80A T0-220F

    1N7001

    Abstract: 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211 IXTP4N90
    Text: - M. A %¿ £ tt t Vd s or * Vd g h V € £ të (Ta=25^C) Vg s (V) Ig s s Pd Id * /CH * /CH (A) (W) % 1 CnA) V g s th) Id s s Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) gfs Ciss Coss Crss <*typ) (max) (pF) (*typ)


    OCR Scan     		PDF XTP4N80 O-220 IXTP4N80A IXTP4N90 T0-204AA 2N6659 O-205AF 2N6660 1N7001 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211

    2N6155

    Abstract: BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BSS92 BUZ64
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- + SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan     		PDF SSS6N60 O-220 8SS89 BSS92 8SS100 O-220AB BUZ171 O-220ftB irf120 to-204aa 2N6155 BUZ23 SIEMENS siemens Ni 1000 4900 SIEMENS BUZ10 BUZ54 BUZ11 BUZ24 BUZ64

    4900 SIEMENS

    Abstract: 2N6155 BUZ211 BUZ54 SSS6N60 BUZ11 BUZ24 BUZ74A SIEMENS BSS92 BUZ41A
    Text: - 314 - f M % tt € BSS92 6SS100 BSStOI SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS SIEMENS P N N BUZ6Û BUZ64 BUZZI BUZ72A BUZ73A BUZ74A BUZ76A BUZ80 8UZ211 2N6659 2N6660 2N6661 2N6TS5 2N67 56 f- SIEMENS SIEMENS SIEMENS SIEMENS


    OCR Scan     		PDF SSS6N60 O-220 8SS89 BSS92 8SS100 T0-204AA 2N6659 O-205AF 2N6660 4900 SIEMENS 2N6155 BUZ211 BUZ54 BUZ11 BUZ24 BUZ74A SIEMENS BUZ41A

    IRFS9620

    Abstract: IRFS9522 SSS6N60 IRFS820
    Text: FUNCTION GUIDE POWER MOSFETs TO-220 FULL PACKAGE N-CHANNEL Continued BVdss(V) ID(onKA) RDS(onXQ) Part Number 2.20 2.50 4.00 4.50 7.00 8.00 4.000 3.000 2.000 1.500 1.100 0.850 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 500.00 2.20 2.50 4.00 4.50 7.00


    OCR Scan     		PDF O-220 IRFS823 IRFS821 IRFS833 IRFS831 IRFS843 IRFS841 IRFS822 IRFS820 IRFS832 IRFS9620 IRFS9522 SSS6N60

    SSS60N

    Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
    Text: MOSFETs FUNCTION GUIDE TO-220 FULL PACKAGE N-CHANNEL Part Number BV d ss V lo(on)(A) RDS(on)(Q) FWjc(KTW) PD(Watt) Page IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 50 13.00 14.00 20.00 28.00 30.00 36.00 0.100 0.084 0.050 0.028 0.024 0.018 4.16 4.00


    OCR Scan     		PDF O-220 IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 IRFSZ24 SSS15N06 IRFSZ34 SSS60N sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830