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    SS64N55 Search Results

    SS64N55 Datasheets (1)

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    SS64N55 Samsung Electronics Scan PDF

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    SSS6N60

    Abstract: n-channel 600 volts 250M SS64N55 SSS6N55 ca8a
    Text: N-CHANNEL POWER MOSFETS SSS6N60/55 FEATURES T O -2 2 0 F • Lower R ds <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF SSS6N60/55 SSS6N60 SS64N55 to-220 SSS6N55 0RAIN-T040URCE 002047b n-channel 600 volts 250M ca8a

    SSS6N60

    Abstract: 250M SS64N55 SSS6N55
    Text: N-CHANNEL POWER MOSFETS SSS6N60/55 FEATURES • • • • • • • Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF SSS6N60/55 SSS6N60 SS64N55 O-220F SSS6N55 250M