AD7752
Abstract: AD775JN 74als541n AD775 inverter manual dv 700 74als541 AD775JR AD817 AD822 ad7753
Text: a FUNCTIONAL BLOCK DIAGRAM V IN AV DD 18 14 15 SWITCH MATRIX FINE COMPARATORS BANK A 23 FINE COMPARATORS BANK B V RBS 22 5 CLOCK LOGIC AV SS 20 21 AV SS 12 CLK 2 8 3-STATE OUTPUT LATCHES CORRECTION LOGIC 17 255 V RB 10 D7 MSB 4 COARSE COMPARATORS LSB MULTIPLEXOR
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Original
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AD775
24-Pin
N-24B)
R-24A)
AD7752
AD775JN
74als541n
AD775
inverter manual dv 700
74als541
AD775JR
AD817
AD822
ad7753
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PDF
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inverter manual dv 700
Abstract: AD817 74als541 ad775jn c1830
Text: BACK a FUNCTIONAL BLOCK DIAGRAM V IN AV DD 18 14 15 SWITCH MATRIX FINE COMPARATORS BANK A 23 FINE COMPARATORS BANK B V RBS 22 5 CLOCK LOGIC AV SS 20 21 AV SS 12 CLK 2 8 3-STATE OUTPUT LATCHES CORRECTION LOGIC 17 255 V RB 10 D7 MSB 4 COARSE COMPARATORS LSB MULTIPLEXOR
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Original
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24-Pin
AD775
N-24B)
R-24A)
C1830
inverter manual dv 700
AD817
74als541
ad775jn
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PDF
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3M Touch Systems
Abstract: ECEA1ES
Text: Aluminum Electrolytic Capacitor/SS Radial lead type Series: NEW • Features Discontinued Type :A SS Endurance :85°C 2000 h ■ Specifications Operating temp. range Rated W.V. range -40 to + 85°C 6.3 to 50 V .DC Nominal cap. range Capacitance 47 to 4700 µ F
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Original
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120Hz/
03per
120Hz
2000hrs
RCR-2367
3M Touch Systems
ECEA1ES
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PDF
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Ultrasonic S
Abstract: 3M Touch Systems SU SERIES CAPACITOR ALUMINIUM
Text: Aluminum Electrolytic Capacitor/SS Radial lead type Series: NEW • Features Discontinued Type :A SS Endurance :85°C 2000 h ■ Specifications Operating temp. range Rated W.V. range -40 to + 85°C 6.3 to 50 V .DC Nominal cap. range Capacitance 47 to 4700 µ F
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Original
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120Hz/
03per
120Hz
2000hrs
RCR-2367
Ultrasonic S
3M Touch Systems
SU SERIES CAPACITOR ALUMINIUM
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PDF
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12N60FI
Abstract: 12N60F sth12n60fi 12N60 transistor 12n60 st 12N60 12N-60F STH12N60 12n60 dc GS 069 7.2 24 v
Text: SGS-THOMSON ELiOT iD SS STH12N60 STH12N60FI N^ CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V STH12N60 STH12N60FI d ss 600 V 600 V R D S (o n Id 0.6 n 0.6 £2 12 A 7 A ; ; . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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OCR Scan
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STH12N60
STH12N60FI
ISOWATT218
12N60
12V60/'
12N60FI
12N60F
sth12n60fi
transistor 12n60
st 12N60
12N-60F
12n60 dc
GS 069 7.2 24 v
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PDF
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SMPJ177
Abstract: SMP3330 PJ99 P1086
Text: 8-94 F 10 Small Outline Surface Mount Package Devices P-C H A N N E L SILICON JU N C TIO N FIELD-EFFECT TRANSISTORS Device Type V g S(OFF) • g ss bvg ss Limits Min (V) m Max @Vgs Min (nA) (V) (V) @IG Id s s Conditions Max Vds b Min Max @VDS (V) (V) (nA)
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OCR Scan
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PDF
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Text: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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OCR Scan
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125mW
2SC4627
2SC5021
2SA1790
2SC4626
2SC4655
2SC4809
2SC5295
2SC4808
2SA1806
D2375
D1259A
d1267a
D1265A
transistor 2SA1949
2sd2328a
TRANSISTORS SELECTION GUIDE
D1261A
C3795
2SB1526
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PDF
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2N3684
Abstract: 2N3685 2N3686 2N3687 2N4117 2N4117A 2N4118 2N4118A 2N4119 2N4119A
Text: THOMSON/ DISTRIBUTOR SÖE D T05t,fl73 □00S740 4SD TCSK Discrete Transistors Amplifier Transistors Junction FETs - N-Channel Vp V •d s s mA M ax >GSS pA M ax b v G SS V Min C|ss pF M ax C rss pF M ax -2 .0 -1 .0 -0 .6 -0 .3 -5 .0 -3 .5 -2 .0 -1 .2 -1 0 0
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OCR Scan
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T0Stifl73
00S740
2N3684
2N3685
2N3686
2N3687
2N4117
2N4117A
2N4118
2N4118A
2N4119
2N4119A
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PDF
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NF510
Abstract: 2N4393 2N4092 2N3971 2N4860A 2N5654 2N3966 2N3970 2N3972 2N4091
Text: N-Channel Junction Field Effect Transistors SWITCHING/CHOPPING M A X IM U M R A T IN G S V ' d ss mA TYPE GS(off) (V) rds(on) Ciss Crss (ohms) (pF) t on 'o ff (pF) (ns) (ns) max max CASE NO. A Pd (mW) BV G SS (V) min max min max max max max 10 5 3 30 50
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OCR Scan
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O-92DD
NF510
2N3966
O-72DH
2N3970
2N3971
2N3972
2N4091
2N4393
2N4092
2N4860A
2N5654
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PDF
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bf 649
Abstract: BC 247 bo 139 BF139 bf 867 BO30 Bc 649 ESM4091 bc 877 ESM4092
Text: N channel field effect transistors plastic case Transistors à effet de champ, canal N (boîtier plastique) Case V ( B R )G S S (V) Type Boîtier min * 2 U 38 19 T O 92o -2 5 2 N I5425 F 139 Bo — 3(3 2 N $ 4 26 F 13 9 0o -30 *G SS (nA) ( p A )# <D SS (m A)
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OCR Scan
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F139BÂ
Bo-30_
ESM4091
ESM4092
ESM4303
Bo-30
bf 649
BC 247
bo 139
BF139
bf 867
BO30
Bc 649
bc 877
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PDF
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Z 400 M
Abstract: No abstract text available
Text: 71C 0 4 9 9 7 0 T - 3 S '- s jT THOMSOK SEMICONDUCTORS S G S-THOMSON ~~ ?1C D | 7^ 237 00DM ^7~S | ~ n channel field effect transistors Type* V BR G S S min <GSS m ax • d ss min m a x VGSoH min m ax rDS on m ax »off m ax C lis s m ax C 1 2 SS m ax (V )
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OCR Scan
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200/xA
BCV27
BCV47
BCV46
Z 400 M
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PDF
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BUD48
Abstract: BUD48DI BUD 48 BUX23 BUV41 BUV40 BUW38 BUW52 bux348 TR MJE 350
Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL M0 glJ3 ILdOT©[ l(SS POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)
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OCR Scan
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D44Q1
D44Q3
D44Q5
BUV27
BUD48
BUD48DI
BUD 48
BUX23
BUV41
BUV40
BUW38
BUW52
bux348
TR MJE 350
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PDF
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BUD48DI
Abstract: BUD48 BUV41 BUX 115 BUV18 BUD 48 D44Q5 BUW38 BUV26 BUV40
Text: SGS-THOMSON M0 glJ3 ILdOT©[ l(SS GENERAL PURPOSE & INDUSTRIAL POWER BIPOLAR FAST SWITCHING TRANSISTORS AND DARLINGTONS Internal schematic diagrams Darlingtons except BUD 48 Dl Bipolar transistors 120 / 300 V VCBO RANGE •c Vc b O v CEO ptot <A) (V) (V)
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OCR Scan
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D44Q1
D44Q3
D44Q5
BUV27
BUD48DI
BUD48
BUV41
BUX 115
BUV18
BUD 48
BUW38
BUV26
BUV40
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PDF
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toshiba j200
Abstract: 2SJ200 2SK1529 SC-65
Text: TOSHIBA 2SJ200 Unit in mm 1 5.9 M A X . 0 3 .2 ± 0 .2 i in / O SYMBOL vd ss v g ss :D Pd Teh Tstg RATING -1 8 0 ±20 -1 0 120 150 -5 5 -1 5 0 Pi UNIT V V A W °C °C MARKING Lot Number TYPE n 0 — Month Starting from Alphabet A uuu the Christian Era) >
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OCR Scan
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2SJ200
2SK1529
toshiba j200
2SJ200
SC-65
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PDF
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3SK192
Abstract: 2SK651
Text: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Electrical Characteristics Ta =25 °C (Ta = 2 5 “C) Package (No.) Application SS Mini Type S Mini Type (D5) (D1) Mini Type (D12) New S Type (D34) TO-92 (D46) V dso * V gds (V )
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OCR Scan
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2SK2380
2SJ0385
2SJ364
2SK662
2SK663
2SK1103
2SJ163
2SK198
2SK374
2SK123
3SK192
2SK651
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHP6ND50E, PHB6ND50E FREDFET, Avalanche energy rated_ FEATURES • • • • • • SYMBOL QUICK REFERENCE DATA V,D SS Repetitive Avalanche Rated Fast switching
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OCR Scan
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PHP6ND50E,
PHB6ND50E
PHB6ND50E
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PDF
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Untitled
Abstract: No abstract text available
Text: TO-237 Plastic Package Transistors NPN Maxinnum R atin gs Type No. ^CBO (V) Min ^CEO (V) Min Electrical Characteristics (Ta=25°C, U n le ss Otherw ise Specified) 'c (A) ^EBO (V) Min @Tc=25°c (W ) 'cm (A) 'c80 (HA) Max ^cs (V) •v* Min @ >0 & ^CE (mA) (V)
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OCR Scan
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O-237
2N6715
2N6716
O-237-1
CIL2331
CIL23310
CIL2331Y
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PDF
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ci 4030
Abstract: 4030 bf 4030B gate 4030 SD 4030 SD
Text: C O S /M O S INTEGRATED CIRCUIT 4 0 s 0 p, ^ hcc/hcf «bob I 3 QUAD E X C L U S IV E -O R GATE • • • • • • • • M ED IU M -S PEE D O PE R ATIO N - t PHL= t PLH= 60 ns TYP. @ CL = 50 pF and V DD- V SS= 10V LOW O U TPU T IM PEDANCE: 5 0 0 i2 (TYP.) @ V DD- V SS= 10V
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OCR Scan
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500i2
4030B
ci 4030
4030 bf
4030B
gate 4030 SD
4030 SD
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PDF
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bss65
Abstract: No abstract text available
Text: SOT23 PNP SILICON PLANAR HIGH SPEED TRANSISTOR ISSUE 2 - SEPTEMBER 1995 PARTMARKING DETAIL — BSS65 Q_ BSS65 - L1 B SS 65R - L5 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V CBO -12 V Collector-E m itter Voltage
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OCR Scan
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BSS65
BSS65
-10mA,
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PDF
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transistor BC204
Abstract: 2SA984F
Text: TO-92 R«stlc Package Transistor» PNP Electrical Characteristics (Ta=25"C. U n le ss Otherwise Specified) Maxim um Ratings Type No. 2SA719 H.E10 '' i 'J : V EBO (V) Min (V) Min (V) Min 30 25 5 PD (W) w @Tc=25cc 0.625 0.5 c:BO V cb ' ces ^CE (pA) Max (V)
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OCR Scan
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O-92-4
O-92-1
2SA970
2SA970G
2SA984D
transistor BC204
2SA984F
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PDF
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Untitled
Abstract: No abstract text available
Text: Tem ic Siliconix_ _ N-Channel Enhancement-Mode MOS Transistor Product Summary V bk d ss M in (V) r DS(on) M ax (Q ) Vg s (Ui) (V) Id (A) 200 11 0.8 to 3.0 0.085 Features • • • • • Low On-Resistance: 9.5 Q
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OCR Scan
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O-236
OT-23)
TN2010T
P-38212--Rev.
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PDF
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Untitled
Abstract: No abstract text available
Text: TO-39 Metal-Can Package Transistore NFN Maxim um Ratings Type No. Electrical Characteristics (Ta=25°C, U n le ss Otherwise Specified) Po (W) @Tc=25°c ^C80 VC8 (mA) Max e (V) 'cES V CE @ (V) hFE @ 'c & (mA) VBE(SAT) 'c e c * ^CBO ^CEO V E0O (V) Min (VI
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OCR Scan
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BFX85
BFX86
BFY50
BFY51
BFY52
BFY56
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PDF
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philips bsd215
Abstract: BST110 BF909WR
Text: Philips Semiconductors Selection guide Small-signal Field-effect Transistors N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTORS CHARACTERISTICS TYPE NUMBER ± V Ds PACKAGE V Id Ig (mA) ly ts l ss “ V (P )G S min - max (mA) min. (mS) (V ) C r, PAGE (PF) Hi-fi amplifiers and AF equipment
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OCR Scan
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BC264A
BC264B
BC264C
BC264D
BF245A
BST120
BST122
PHP112
PHP125
PHC2102501
philips bsd215
BST110
BF909WR
|
PDF
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BUZ80AF
Abstract: BUZ80A BUZ80AFI
Text: BUZ80A BUZ80AFI SGS-THOMSON Z T ê N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V d ss FtDS on Id BUZ80A 800 V 3 Ü 3.8 A BUZ80AFI 800 V 3 Li 2.4 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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OCR Scan
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BUZ80A
BUZ80AFI
BUZ80AFI
O-220
ISOWATT220
BUZ80A/BUZ80AFI
SCQ5970
BUZ80AF
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PDF
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