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    SRAM 64KX16 Search Results

    SRAM 64KX16 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27LS07PC Rochester Electronics LLC 27LS07 - Standard SRAM, 16X4 Visit Rochester Electronics LLC Buy
    CY7C167A-35PC Rochester Electronics LLC CY7C167A - CMOS SRAM Visit Rochester Electronics LLC Buy
    HM3-6504B-9 Rochester Electronics LLC HM3-6504 - Standard SRAM, 4KX1, 220ns, CMOS Visit Rochester Electronics LLC Buy
    HM4-6504B-9 Rochester Electronics LLC HM4-6504 - Standard SRAM, 4KX1, 220ns, CMOS Visit Rochester Electronics LLC Buy
    MD2114A-5 Rochester Electronics LLC 2114A - 1K X 4 SRAM Visit Rochester Electronics LLC Buy

    SRAM 64KX16 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    A15A

    Abstract: A15B EDI8L21664V MO-151 9704 64k x 16 SRAM
    Text: EDI8L21664V 2x64Kx16 SRAM TMS320C54x External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multilayer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA. Operating with a 3.3V power supply and with access


    Original     		EDI8L21664V 2x64Kx16 TMS320C54x EDI8L21664VxxBC 64Kx16 DQ0-15) EDI8L21664V10BC A15A A15B EDI8L21664V MO-151 9704 64k x 16 SRAM PDF

    MR0A16A

    Abstract: 64Kx16 SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35
    Text: MR0A16A 64Kx16 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing and Pin-out Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System


    Original     		MR0A16A 64Kx16 20-years 44-TSOP 48-BGA MR0A16A SRAM 64Kx16 MR0A16ACYS35 MR0A16AVYS35 MR0A16AYS35 PDF

    synchronous sram

    Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
    Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK


    OCR Scan     		EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C synchronous sram 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832 PDF

    3524CP

    Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
    Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS


    Original     		HB56U132 HB56H132 HB56U232 HB56H232 HN62W454B 512kx8 256kx16 HN62W4416N 16Mbit 1Mx16 3524CP 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024 PDF

    SM-1994

    Abstract: A2000V
    Text: HY62UF16100/ HY62QF16100/ HY62EF16100/ HY62SF16100 Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16100 / HY62QF16100 / HY62EF16100 / HY62SF16100 is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The


    Original     		HY62UF16100/ HY62QF16100/ HY62EF16100/ HY62SF16100 64Kx16bit HY62UF16100 HY62QF16100 HY62EF16100 16bit. SM-1994 A2000V PDF

    256Kx16bit

    Abstract: 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE GUIDE Ordering Information 9 Quick Reference Guide 11 3. SRAM DATA SHEETS Low Power Dissipation SRAM 5.0V/3.3V/3.0V Operation 256K -b it SRAM GM76C256C 32Kx8-bit, 5.0V 19 GM76V256C 32Kx8-bit, 3.3V


    OCR Scan     		GM76C256C GM76V256C GM76U256C GM76C256CW HY62CT08081E HY62WT08081E HY62K T08081E 32Kx8-bit, 256Kx16bit 128KX16 HY628100B 512kx16bit SRAM SRAM 256kx16 PDF

    SM-1994

    Abstract: No abstract text available
    Text: HY62UF16101C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62UF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101C uses high performance full CMOS process technology


    Original     		HY62UF16101C 64Kx16bit 16bit. 400mil Voltage2UF16101C 48ball SM-1994. SM-1994 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616FS1000Z, KM616FR1000Z Family Document Title 64Kx16 SUper Low Power and Low Voltage Full CMOS SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Remark Rev. 0.0 - 1′st edition - Package Dimension Finalized


    Original     		KM616FS1000Z, KM616FR1000Z 64Kx16 48-CSP 25/Typ. 32/Typ. 55/Typ. 42/Typ. PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62QF16100C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62QF16100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62QF16100C uses high performance full CMOS process technology


    Original     		HY62QF16100C 64Kx16bit 16bit. HY62QCKAGE 48ball SM-1994. PDF

    A15A

    Abstract: A15B EDI8L21664V MO-151 TMS320C54X 9704
    Text: ^EDI EDI8L21664V M ELECTRONIC DESIGNS. INC 2x64Kx16SRAM TMS320C54X External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith two 64Kx16 die mounted on a m ulti­ • Texas Instruments TMS320C54x


    OCR Scan     		EDI8L21664V 2x64Kx16SRAM TMS320C54x MO-151 EDI8L21664VxxBC 2x64Kx16 64Kx16 EDI8L21664V10BC EDI8L21664V12BC A15A A15B EDI8L21664V MO-151 9704 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16100C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62SF16100C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62SF16100C uses high performance full CMOS process technology


    Original     		HY62SF16100C 64Kx16bit 16bit. HY62ECKAGE 48ball SM-1994. PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616FS2000Z, KM616FR2000Z Family 64Kx16bit Super Low Power and Low Voltage Full CMOS SRAM with 4S-CSP Chip Scale Package FEATURES SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4pm Full CMOS The KM616FS2OO0Z and KM616FR20Q0Z fam ily are fabri­


    OCR Scan     		KM616FS2000Z, KM616FR2000Z 64Kx16bit 128Kx16 KM616FS2000Z 48-C5P KM616FS2OO0Z KM616FR20Q0Z PDF

    Untitled

    Abstract: No abstract text available
    Text: White Electronic Designs EDI8L21665V 2x64Kx16 SRAM FEATURES DSP Memory Solution The EDI8L21665VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA.


    Original     		EDI8L21665V 2x64Kx16 EDI8L21665VxxBC 64Kx16 TMS320C5x TMS320C5x EDI8L21665V10BC PDF

    Untitled

    Abstract: No abstract text available
    Text: KM716V689 64Kx16 Synchronous SRAM 64K X 16-Bit Synchronous Pipelined Burst SRAM FEATURES GENERAL DESCRIPTION • Synchronous Operation. The KM716V689 is a 1,048,576-bit Synchronous Static • 2 Stage Pipelined operation with 4 Burst Random • On-Chip Address Counter.


    OCR Scan     		KM716V689 64Kx16 16-Bit KM716V689 576-bit i486/Pentium 0D2401S PDF

    ic tba 810

    Abstract: No abstract text available
    Text: KM616FS1010Z, KM616FR1010Z Family Preliminary CMOS SRAM Document Title 64Kx16 Super Low Power and Low Voltage Full CMOS SRAM with 48-CSP Data Sheets Revision No. History Draft Data Remark 0.0 Initial Draft - LB, UB controls standby mode June 3, 1997 Preliminary


    OCR Scan     		KM616FS1010Z, KM616FR1010Z 64Kx16 48-CSP KM616FS1010L KM616FR1010L ic tba 810 PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62SF16101C Series 64Kx16bit full CMOS SRAM PRELIMINARY DESCRIPTION FEATURES The HY62SF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62SF16101C uses high performance full CMOS process technology


    Original     		HY62SF16101C 64Kx16bit 16bit. HY62SKAGE 48ball SM-1994. PDF

    Untitled

    Abstract: No abstract text available
    Text: HY62UF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 03 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others


    Original     		HY62UF16101C 64Kx16bit 100ns HYUF611Cc 100ns PDF

    JEDECMO-151

    Abstract: A15B
    Text: ^EDI EDI8L21664V h ELECTRONIC DESIGNS, INC 2xS4Kx1SSRAM TMS320C54X External SRAM Memory Solution Features The E D I8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith tw o 64Kx16 die mounted on a m ulti­ • Texas Instruments TMS320C54x


    OCR Scan     		EDI8L21664V TMS320C54x MO-151 EDI8L21664VxxBC 2x64Kx16 64Kx16 EDI8L21664V10BC EDI8L21664V12BC EDI8L21664V15BC JEDECMO-151 A15B PDF

    SRAM 64Kx16

    Abstract: No abstract text available
    Text: Preliminary KM616V1OOOBLI / Ll-L CMOS SRAM 64Kx16 Bit Low Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40 to 85°C The KM616V1000BLI/LI-L is a 1,048,576-bit high • Fast Access Time : 70, 100 ns max.


    OCR Scan     		KM616V1OOOBLI 64Kx16 360nW 216mW I/01-I/08 I/09-I/016 KM616V1000BLTI/LTI-L: 400mil KM616V1000BLRI/LRI-L: SRAM 64Kx16 PDF

    SM-1994

    Abstract: HY62UF16101C
    Text: HY62UF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 3.0V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 03 Divide output load into two factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW - Others


    Original     		HY62UF16101C 64Kx16bit 100ns HYUF611Cc 100ns SM-1994 PDF

    A15B

    Abstract: A15A EDI8L21664V MO-151
    Text: EDI8L21664V TMS320C54x External SRAM Memory Solution FEATURES DESCRIPTION n DSP Memory Solution The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA.


    Original     		EDI8L21664V TMS320C54x EDI8L21664VxxBC 2x64Kx16 64Kx16 TMS320C54x EDI8L21664V10BC A15B A15A EDI8L21664V MO-151 PDF

    KM616FS1010

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM616FS1010Z, KM616FR1010Z Family Document Title 64Kx16 Super Low Power and Low Voltage Full CMOS SRAM with 48-CSP Data Sheets Revision History Revision No. History Draft Data Remark 0.0 Initial Draft - LB, UB controls standby mode June 3, 1997


    Original     		KM616FS1010Z, KM616FR1010Z 64Kx16 48-CSP KM616FS10B 25/Typ. 32/Typ. 55/Typ. KM616FS1010 PDF

    7133 A-1

    Abstract: AN-91 IDT7024 8K RAM 71421
    Text: THE MOST COMMONLY ASKED QUESTIONS ABOUT ASYNCHRONOUS DUAL-PORT SRAMS APPLICATION NOTE AN-91 By Mark Baumann and Cheryl Brennan What is a dual-port SRAM? A dual -port SRAM is exactly what it sounds like. It is a single static SRAM array accessed by two sets of address, data, and control signals.


    Original     		AN-91 7133 A-1 AN-91 IDT7024 8K RAM 71421 PDF

    CMOS 4091

    Abstract: HY62SF16101C
    Text: HY62SF16101C Series 64Kx16bit full CMOS SRAM Document Title 64K x16 bit 1.8V Super Low Power Full CMOS Slow SRAM Revision History Revision No History Draft Date Remark 03 Divide output load into a couple of factors - tCLZ,tOLZ,tBLZ,tCHZ,tOHZ,tBHZ,tWHZ,tOW


    Original     		HY62SF16101C 64Kx16bit SF16101C HYSF611Cc 100ns 120ns CMOS 4091 PDF