A15A
Abstract: A15B EDI8L21664V MO-151 9704 64k x 16 SRAM
Text: EDI8L21664V 2x64Kx16 SRAM TMS320C54x External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multilayer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA. Operating with a 3.3V power supply and with access
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EDI8L21664V
2x64Kx16
TMS320C54x
EDI8L21664VxxBC
64Kx16
DQ0-15)
EDI8L21664V10BC
A15A
A15B
EDI8L21664V
MO-151
9704
64k x 16 SRAM
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A15B
Abstract: A15A EDI8L21664V MO-151
Text: EDI8L21664V TMS320C54x External SRAM Memory Solution FEATURES DESCRIPTION n DSP Memory Solution The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi-layer laminate substrate. The device is packaged in a 74 lead, 15mm by 15mm, BGA.
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Original
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PDF
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EDI8L21664V
TMS320C54x
EDI8L21664VxxBC
2x64Kx16
64Kx16
TMS320C54x
EDI8L21664V10BC
A15B
A15A
EDI8L21664V
MO-151
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A15A
Abstract: A15B EDI8L21664V MO-151 TMS320C54X 9704
Text: ^EDI EDI8L21664V M ELECTRONIC DESIGNS. INC 2x64Kx16SRAM TMS320C54X External SRAM Memory Solution Features The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM DSP Memory Solution constructed w ith two 64Kx16 die mounted on a m ulti • Texas Instruments TMS320C54x
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OCR Scan
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PDF
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EDI8L21664V
2x64Kx16SRAM
TMS320C54x
MO-151
EDI8L21664VxxBC
2x64Kx16
64Kx16
EDI8L21664V10BC
EDI8L21664V12BC
A15A
A15B
EDI8L21664V
MO-151
9704
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A15B
Abstract: No abstract text available
Text: ^EDI EDI8L21664V h El£CTRO*«C 0C9CN& NC.1 2xS4KxieSRAM TMS320C54XExternalSRAM MemorySolution F eatures The EDI8L21664VxxBC is a 3.3V, 2x64Kx16 SRAM constructed with two 64Kx16 die mounted on a multi layer laminate substrate. The device is packaged in a 74
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OCR Scan
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PDF
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TMS320C54XExternalSRAM
TMS320C54x
MO-151
EDI8L21664V
EDI8L21664VxxBC
2x64Kx16
64Kx16
EDI8L21664V10BC
EDI8L21664V12BC
EDI8L21664V
A15B
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