62256alp
Abstract: HY62256ALP 62256 HY62256A Series HY62256ALLJ Hyundai 8X13 HY62256A HY62256A-I HY62256ALLP HY62256AP
Text: Data Sheet-sram/62256ald1 http://www.hea.com/hean2/sram/62256ald1.htm HY62256A- I Series 32Kx8bit CMOS SRAM Description Features The Fully static operation and HY62256A/HY62256A-I Tri-state outputs is a high-speed, low TTL compatible inputs power and 32,786 x 8-bits
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Sheet-sram/62256ald1
com/hean2/sram/62256ald1
HY62256A-
32Kx8bit
HY62256A/HY62256A-I
technol256AP-I
HY62256ALP-I
HY62256AJ-I
HY62256ALJ-I
62256alp
HY62256ALP
62256
HY62256A Series
HY62256ALLJ Hyundai
8X13
HY62256A
HY62256A-I
HY62256ALLP
HY62256AP
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MR256A08B
Abstract: MR256A08BCYS35 32KX8
Text: MR256A08B 32Kx8 MRAM Memory Features • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Always Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBRAM in System
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MR256A08B
32Kx8
20-years
44-TSOP
48-BGA
MR256A08B
MR256A08BCYS35
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LH52256CT-10LL
Abstract: static ram 32kx8
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH52256CT-10LL 256K SRAM Model No.: LH525C9T Spec No.: EL086125 Issue Date: June 19, 1996 STATIC SRAM RAM Random Access Memory LH52256CT-10LL 256K (32Kx8) (100 ns) (TSOP)
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LH52256CT-10LL
LH525C9T)
EL086125
LH52256CT-10LL
32Kx8)
static ram 32kx8
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LH52256C-10LL
Abstract: LH525CL9 256k sram
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH52256C-10LL 256K SRAM Model No.: LH525CL9 Spec No.: EL095120 Issue Date: June 2, 1997 Static SRAM RAM Random Access Memory LH52256C-10LL 256K (32Kx8) (100 ns) (DIP)
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LH52256C-10LL
LH525CL9)
EL095120
LH52256C-10LL
32Kx8)
LH525CL9
256k sram
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LH52256CH-85LL
Abstract: LH525CL2 32KX8
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH52256CH-85LL 256K SRAM Model No.: LH525CL2 Spec No.: EL095124 Issue Date: June 3, 1997 Static SRAM RAM Random Access Memory LH52256CH-85LL 256K (32Kx8) (85 ns) (DIP)
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LH52256CH-85LL
LH525CL2)
EL095124
LH52256CH-85LL
32Kx8)
LH525CL2
32KX8
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3524CP
Abstract: 2MX40 RAM128KX8 DIP HM624256 HM62832 16Mbit FRAM Dram 168 pin EDO 8Mx8 hm62256 flash 32 Pin PLCC 16mbit HN27C1024
Text: Memory Shortform, May '97 Memory Products Fast Page Mode DRAM DRAM EDO DRAM Synchronous DRAM SRAM Low Power SRAM Fast SRAM Non Volatile EPROM & OTPROM Memories EEPROM FRAM Fast Page Mode DRAM Modules EDO DRAM Modules SDRAM Modules FLASH Memory FLASH FLASH CARDS
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HB56U132
HB56H132
HB56U232
HB56H232
HN62W454B
512kx8
256kx16
HN62W4416N
16Mbit
1Mx16
3524CP
2MX40
RAM128KX8 DIP
HM624256
HM62832
16Mbit FRAM
Dram 168 pin EDO 8Mx8
hm62256
flash 32 Pin PLCC 16mbit
HN27C1024
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GM76C256CLFW-W
Abstract: GM76C256CLLT-W GM76C256CLL-W GM76C256CLT-W GM76C256CL-W GM76C256CW GM76C256CLL
Text: GM76C256CW Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 2.7~5.5V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 00 Revision History Insert Revised - Datasheet format change - PDIP package type insert - Pin configuration change
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GM76C256CW
32Kx8bit
high356)
28pin
330mil
GM76C256CLFW-W
GM76C256CLLT-W
GM76C256CLL-W
GM76C256CLT-W
GM76C256CL-W
GM76C256CLL
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Untitled
Abstract: No abstract text available
Text: bq4832Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4832Y RTC Module is a nonvolatile 262,144-bit SRAM organized as 32,768 words by 8 bits with
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bq4832Y
32Kx8
10-year
144-bit
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LH52256CH-85LL
Abstract: LH525CL2
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH52256CH-85LL 256K SRAM Model No.: LH525CL2 Spec No.: EL095124 Issue Date: June 3, 1997 Static SRAM RAM Random Access Memory LH52256CH-85LL 256K (32Kx8) (85 ns) (DIP) SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE.
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LH52256CH-85LL
LH525CL2)
EL095124
LH52256CH-85LL
32Kx8)
LH525CL2
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bq4832Y
Abstract: No abstract text available
Text: bq4832Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4832Y RTC Module is a nonvolatile 262,144-bit SRAM organized as 32,768 words by 8 bits with
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bq4832Y
32Kx8
144-bit
10-year
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LH52256C-10LL
Abstract: nara LH525CL9
Text: PRODUCT SPECIFICATIONS Integrated Circuits Group LH52256C-10LL 256K SRAM Model No.: LH525CL9 Spec No.: EL095120 Issue Date: June 2, 1997 Static SRAM RAM Random Access Memory LH52256C-10LL 256K (32Kx8) (100 ns) (DIP) SPECIFICATIONS ARE SUBJECT TO CHANGE WITHOUT NOTICE.
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LH52256C-10LL
LH525CL9)
EL095120
LH52256C-10LL
32Kx8)
nara
LH525CL9
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GM76C256CLL
Abstract: GM76C256CLLFW
Text: GM76C256C Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 5.0V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 00 Revision History Insert Revised - Datasheet format change - PDIP package type insert - Pin configuration change Jul.07.2000
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GM76C256C
32Kx8bit
GM76C256C
GM76C256CLL
GM76C256CLLFW
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bq4832Y
Abstract: BQ4832YMA-85
Text: bq4832Y RTC Module With 32Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail circuit, and battery The bq4832Y RTC Module is a nonvolatile 262,144-bit SRAM organized as 32,768 words by 8 bits with
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bq4832Y
32Kx8
144-bit
10-year
BQ4832YMA-85
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GM76V256C
Abstract: GM76V256CE GM76V256CL GM76V256CLE GM76V256CLEFW GM76V256CLFW GM76V256CLL GM76V256CLLE GM76V256CLLEFW GM76V256CLLFW
Text: GM76V256C Series 32Kx8bit CMOS SRAM Document Title 32K x8 bit 3.3V Low Power CMOS slow SRAM Revision History Revision No History Draft Date 00 Revision History Insert Revised - Datasheet format change - PDIP package type insert - Pin configuration change Jul.08.2000
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GM76V256C
32Kx8bit
28pin
330mil
GM76V256CE
GM76V256CL
GM76V256CLE
GM76V256CLEFW
GM76V256CLFW
GM76V256CLL
GM76V256CLLE
GM76V256CLLEFW
GM76V256CLLFW
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synchronous sram
Abstract: 4Kx1 DRAM SRAM 6T SRAM DRAM 64kx16 edi8832
Text: ^EDI_ Electronic DMlgrw Inc. ^ by Part Number _ _ _ Part No. Tvoe Density Ora EDH816H64C EDI2018QC EDI20181C EDI20182C EDI20183C EDI20184C EDI20185C EDI2040C EDI2041C EDI2042C SRAM Module Synchronous SRAM, Latched I/O, 1CLK Synchronous SRAM, Registered I/O, 1CLK
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EDH816H64C
EDI2018QC
EDI20181C
EDI20182C
EDI20183C
EDI20184C
EDI20185C
EDI2040C
EDI2041C
EDI2042C
synchronous sram
4Kx1 DRAM
SRAM 6T
SRAM
DRAM 64kx16
edi8832
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32Kx16 150ns
Abstract: No abstract text available
Text: ^EDI EDI9F3420C ELECTRONIC DESIGNS INC. • Combination SRAM/FLASH/EEPROM Module Mixed Technology Memory Moduie 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM Features The EDI9F3420C combines data SRAM , program (FLASH) and boot (EEPROM) memory arrays in a single
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128Kx16
32Kx16
120ns
150ns
EDI9F3420C
EDI9F3420C
32Kx16 150ns
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PDF
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16-Bit Microprocessors
Abstract: ELECTRONIC ARRAYS memory
Text: m o EDI9F3420C \ ELECTRONIC DESIGNS INC. • Combination SRAM/FLASH/EEPROM Module Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM The EDI9F3420C combines data SRAM , program (FLASH) and boot (EEPROM) memory anrays in a single
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EDI9F3420C
128Kx16
32Kx16
EDI9F3420C
EDI9F3420C,
110ns.
130ns,
150ns.
16-Bit Microprocessors
ELECTRONIC ARRAYS memory
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Untitled
Abstract: No abstract text available
Text: EDI9F3420C m a ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM Features vss vcc Mixed Technology Memory Module with 128Kx16 bit CMOS SRAM,
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EDI9F3420C
128Kx16
32Kx16
120ns
150ns
EDI9F3420C
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PDF
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A934
Abstract: No abstract text available
Text: ^EDI EDI9F3420C ELECTRONIC DESIGNS INC.- Combination SRAM/FLASH/EEPROM Module Pin Configuration and Block Diagram Mixed Technology Memory Module 128Kx16 SRAM, 128Kx16 Flash and 32Kx16 EEPROM A0-A16 vss vcc Features Mixed Technology Memory Module with !28Kx16 bit CMOS SRAM,
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EDI9F3420C
128Kx16
32Kx16
120ns
150ns
EDI9F3420C
A934
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PDF
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Untitled
Abstract: No abstract text available
Text: h 1 1 1 5 «H O D ID IS T IT E • HRN 256K SRAM H E SEMICONDUCTOR. MC. 256K SRAM SRAM DIE 256KX 1, 6 4 K x 4, 32Kx8 LOW VOLTAGE FEATURES • • • • DIE OUTLINE Top View Single 3.3V pow er supply All I/ O pins are 5V tolerant High-performance, low-power, CMOS process
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256KX
32Kx8
MT5LC2564.
150mm
C1994.
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary CMOS SRAM KM62256CLE-LU 32Kx8 Bit Extended Voltage & Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Operating Voltage : 2.7-5.5V • Extended Temperature Range : -25 to 85°C • Fast Access Time - 3.0V Operation : 120ns Max.
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KM62256CLE-LU
KM62256CLE-LU
144-bit
32Kx8
DD2133ti
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PDF
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7u23
Abstract: No abstract text available
Text: CMOS SRAM KM62256CLI-LV 32Kx8Bit Extended Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40°C to 85°C • Extended Operating Voltage : 3.0-5.5V • Fast Access Time - 3.3V Operation : 100ns Max.
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KM62256CLI-LV
32Kx8Bit
100ns
72\x\N
108mW
385mW
KM62256CLGI-LV
28-pin
KM62256CLTGI-LV
28-PinTSOP
7u23
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PDF
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1993e
Abstract: A14C bq4011 bq4011-100 bq4011-150
Text: bq4011/foq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM General Description Features >- D ata retention in the absence of power ► Automatic write-protection during power-up/power-down cycles >• Industry-standard 28-pin 32K x 8 pinout >- Conventional SRAM operation;
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bq4011/bq4011Y
32Kx8
28-pin
10-year
bq4011
144-bit
condit11YMA-150N.
bq4011-70
bq4011Y-70
bq4011YMA-70N
1993e
A14C
bq4011-100
bq4011-150
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AS7C256
Abstract: AS7C256L
Text: II II High Performance 32Kx8 CMOS SRAM AS7C256 AS7C256L 32Kx8 CMOS SRAM Common I/O \ F E A T U R E S _ • Organization: 32,768 words x 8 bits • Completely static memory. No clocks or timing strobe required. •
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AS7C256
32Kx8
AS7C256L
550mW
28-pin
AS7C256
AS7C256L
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