SPRAGUE CT SERIES Search Results

SPRAGUE CT SERIES Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
PQU650M-F-COVER		Murata Manufacturing Co Ltd	PQU650M Series - 3x5 Fan Cover Kit, RoHs Medical
M304		Coilcraft Inc	Designer's Kit, 132/148 Series RF inductors, RoHS

SPRAGUE CT SERIES Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Unitrode Linear Integrated Circuits Data and Application Abstract: capacitor 0.1uF 50v Ceramic 199D226X0025DA1 UCC3918 Text: DN-87 Design Note UCC3918 “Low On-Resistance Hot Swap Power Manager”, Evaluation Board, Schematic, and List of Materials By Dave Olson INTRODUCTION ABSOLUTE MAXIMUM RATINGS The UCC3918 evaluation kit allows the designer to evaluate the performance of the UCC3918 Low	Original	PDF	DN-87 UCC3918 UCC3918 199D226X0025DA1 Unitrode Linear Integrated Circuits Data and Application capacitor 0.1uF 50v Ceramic 199D226X0025DA1
Unitrode Linear Integrated Circuits Data and Application Abstract: unitrode Applications Note 199D226X0025DA1 Text: DN-87 Design Note UCC3918 “Low On-Resistance Hot Swap Power Manager”, Evaluation Board, Schematic, and List of Materials By Dave Olson INTRODUCTION ABSOLUTE MAXIMUM RATINGS The UCC3918 evaluation kit allows the designer to evaluate the performance of the UCC3918 Low	Original	PDF	DN-87 UCC3918 UCC3918 Unitrode Linear Integrated Circuits Data and Application unitrode Applications Note 199D226X0025DA1
transistor smd z9 Abstract: transistor smd z8 Z9 TRANSISTOR SMD 600F8R2CT250 J374 SMD Transistor z6 AGR18045E JESD22-C101A CRCW12064R75F100 vishay 1206 Text: AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18045E AGR18045E transistor smd z9 transistor smd z8 Z9 TRANSISTOR SMD 600F8R2CT250 J374 SMD Transistor z6 JESD22-C101A CRCW12064R75F100 vishay 1206
AGRA10E Abstract: AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors Text: Preliminary Data Sheet January 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, highvoltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable	Original	PDF	AGRA10E AGRA10E IS-95 C32/F, DS03-161RFPP DS03-038RFPP) AGR045010 AGRA10EU JESD22-C101A 2743019446 tns capacitors
ti c11b Abstract: No abstract text available Text: AGR21060E 60 W, 2.110 GHz—2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR21060E is a high-voltage, gold-metalized, enhancement-mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for wideband code division multiple access	Original	PDF	AGR21060E AGR21060EU AGR21060EF ti c11b
transistor equivalent table 557 Abstract: 21045F Text: AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18030EF DS04-204RFPP PB04-101RFPP) transistor equivalent table 557 21045F
Z9 TRANSISTOR SMD Abstract: AGR18045E JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8 Text: Preliminary Data Sheet November 2004 AGR18045E 45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18045E is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for global system for mobile communication	Original	PDF	AGR18045E AGR18045E DS03-186RFPP Z9 TRANSISTOR SMD JESD22-C101A agere c8 c1 transistor smd z9 grm216r71h transistor smd z8
Untitled Abstract: No abstract text available Text: AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor LDMOS RF power field effect transistor (FET) suitable for	Original	PDF	AGR19125E Hz--1990 AGR19125EU AGR19125EF
AGR18090EF Abstract: No abstract text available Text: Preliminary Data Sheet September 2003 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR18090E AGR18090EF
JESD22-C101A Abstract: AGR09060GF AGR09060GU 06F150 Text: Preliminary Data Sheet October 2004 AGR09060G 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060G is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09060G Hz--895 AGR09060G DS02-022RFPP JESD22-C101A AGR09060GF AGR09060GU 06F150
AGR045010 Abstract: AGRA10E AGRA10EU JESD22-C101A RF MOSFET CLASS AB Text: Preliminary Data Sheet February 2004 AGRA10E 10 W, 100 MHz—1.0 GHz, N-Channel E-Mode, Lateral MOSFET Introduction 865 MHz to 895 MHz The AGRA10E is a broadband general-purpose, high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor	Original	PDF	AGRA10E AGRA10E IS-95 DS04-096RFPP DS03-161RFPP) AGR045010 AGRA10EU JESD22-C101A RF MOSFET CLASS AB
PT6724 Abstract: PT6725 nichicon SE Text: PT6725 Series 13 Amp 12V Input Adjustable Integrated Switching Regulator SLTS102 Revised 6/30/2000 e g Packag in v a S e c New Spa The PT6725 is a new series of high-performance, 13 Amp Integrated Switching Regulators (ISRs) housed in a unique, space-saving 17-pin SIP	Original	PDF	PT6725 SLTS102 17-pin PT6725 PT6724 nichicon SE
RK73H2A10R0F Abstract: AGR09060GUM JESD22-C101A RF35 RM73B2B103J Text: Preliminary Data Sheet July 2004 AGR09060GUM 60 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction Table 1. Thermal Characteristics The AGR09060GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09060GUM Hz--895 AGR09060GUM m8109-9138 DS04-219RFPP PB04-073RFPP) RK73H2A10R0F JESD22-C101A RF35 RM73B2B103J
100B100JW500X Abstract: AGR18090E AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-C101A Text: Preliminary Data Sheet February 2004 AGR18090E 90 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18090E is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for global system for mobile communication (GSM), enhanced	Original	PDF	AGR18090E AGR18090E DS04-104RFPP DS04-033RFPP) 100B100JW500X AGR18090EF AGR18090EU C1812C105K5RACTR JESD22-C101A

AGR09030GUM Abstract: JESD22-C101A RF35 Text: Preliminary Data Sheet August 2004 AGR09030GUM 30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR09030GUM is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for cellular	Original	PDF	AGR09030GUM Hz--895 AGR09030GUM DS04-246RFPP PB04-094RFPP) JESD22-C101A RF35
2N4265 Abstract: Sprague Electric 2N5832 2N3859 2N2926-1 660111 sprague TO92 2N3404 NPN 2N4062 2N2712 Text: SPRAGUE BIPOLAR TRANSISTORS • BIPOLAR TRANSISTORS THE MARK OF RELIABILITY SERIES 2N TRANSISTORS • Sm all-signal TO-92 plastic transistors. JEDEC ‘2N’ registered types. Catalog Number Case Style PD , = 25°C mW 2N2711 2N2712 2N2713 2N2714 2N2923 2N2924	OCR Scan	PDF	2N2711 2N2712 2N2713 2N2714 2N2923 2N2926 2N3395 2N3396 2N3397 2N3398 2N4265 Sprague Electric 2N5832 2N3859 2N2926-1 660111 sprague TO92 2N3404 NPN 2N4062
TP2222A Abstract: ct 60 transistor TP2222 TP5816 TP2906A kd pnp TP2907A tp3061 TP2221 TP2221A Text: € # SPRAGUE BIPOLAR TRANSISTORS « BIPOLAR TRANSISTORS THE MARK OF RELIABILITY SERIES TP TRANSISTORS • S m a ll -s ig n a l T O - 9 2 plastic transistors. Su g ge s te d replace m e n t s f o r 2 N series d e v i c e s a v a i l a b l e in T O - 5 , T O - 1 8 , T O - 3 9 ,	OCR Scan	PDF	O-105, O-106, orTO-226AB TP2221 TP2222A ct 60 transistor TP2222 TP5816 TP2906A kd pnp TP2907A tp3061 TP2221A
elna rsh Abstract: marcon capacitor capacitor cross reference Rubycon CE W ce04w Nichicon CE Aluminum Electrolytic Capacitors mepco capacitor Elna ce 85 Nichicon upr Elna ce 105 Text: Aluminum Electroiytic Capacitor Cross Reference ALUMINUM ELECTROLYTIC CAPACITO RS NIC SERIES NRE-L NRELS NRSA NRSS NRE-S NSR DESCRIPTION Radial, Low Profile Anti-solvent, 85°C Low Profile, Reduced Size Anti-Solvent, 85°C Radial, Current Size, Anti-Solvent, 85°C	OCR Scan	PDF	T350IO elna rsh marcon capacitor capacitor cross reference Rubycon CE W ce04w Nichicon CE Aluminum Electrolytic Capacitors mepco capacitor Elna ce 85 Nichicon upr Elna ce 105
Sprague extralytic Abstract: 2N6925A 2N6924A DIODE ED 11 2n6924 Text: 2N6924 2N6924A 2N6925 2N6925A ^ General ^ ^ Semiconductor ^ - Industries, Inc. Switch HIGH POWER NPN TRANSISTORS These NPN silicon transistors offer an unprecedented combination of speed and ruggedness for use in high speed switching systems. This unique series also features General Semi	OCR Scan	PDF	2N6924 2N6924A 2N6925 2N6925A Sustainin81 2N6924, 2N6924A, 2N6925, 852B1 Sprague extralytic 2N6925A DIODE ED 11
3360D Abstract: uln series lN336 3330-T Text: SPRAGUE/SEfllCOND 8514019 SPRAGUE/ 03 T> GROUP S E M I C O N D S / ICS 03E 04695 • f l S 13 f i S Q D ULN-3330D THROUGH ULN-3363T OPTOELECTRONIC SWITCHES ULN-3330, ULN-3360, AND ULN-3363 OPTOELECTRONIC SWITCHES FEATURES • Photodiode with: On-Chip Amplifier	OCR Scan	PDF	ULN-3330D ULN-3363T ULN-3330, ULN-3360, ULN-3363 3360D uln series lN336 3330-T
GAE19000 Abstract: GAL10 GAJ8 SG-600A gal15000 GAL8R200 GAJ6R100 GAJ6 Text: 0514403 0000300 O SPRAGUE GOODÍTifin > o 5 " -a 3 - o SPRAGUE GOODMAN ELEKS Adjust torque: 1.5 to 7.0 oz.-in. Temperature coefficient: + 1 0 ± 10 PPM/°C, measured over temperature range of - 3 0 °C to 80 °C at 1 MHz and 50% R.H. Typical Q: 8,000 at 1 MHz, 6,000 at 50 MHz, 4,000 at	OCR Scan	PDF
Hall Effect 3 pin ugn Abstract: UGN3019T UGN HALL uln series 3020t UGN-3020T UGN-3019T uln3020 UGN-3501M HALL UGN Text: H A LL EFFECT IN TEG R ATED CIRCUITS SPRAGUE SERIES 3000 M A G N ET IC A LLY -A C T IV A T ED SWITCHES TYPE U G N -3 2 0 1M , U G N /U G S -3 0 19 T, U G N -3 2 0 3 M , and UGN/UGS-3020T D IGITAL SENSORS CHARACTERISTICS These devices are m agnetically-activated electronic sw it	OCR Scan	PDF	UGN-3201M, UGN/UGS-3019T, UGN-3203M, UGN/UGS-3020T UGN-3600M UGN-3601 Hall Effect 3 pin ugn UGN3019T UGN HALL uln series 3020t UGN-3020T UGN-3019T uln3020 UGN-3501M HALL UGN
motorola transistor 2N2907A Abstract: a201 ic transistor av 29 transistor Text: Semiconductor, Inc. TC57 Series LINEAR REGULATOR CONTROLLER FEATURES GENERAL DESCRIPTION • The TC57 is a low dropout regulator controller that operates with an external PNP pass transistor, allowing the user to tailor the LDO characteristics to suit the application	OCR Scan	PDF	FZT749 OT23-5 OT-23A TC57-01 motorola transistor 2N2907A a201 ic transistor av 29 transistor
MQ-64 Abstract: No abstract text available Text: SERIES 8126 SWITCHED-MODE POWER SUPPLY CONTROL CIRCUITS SERIES 8126 SG3526J, SG2526J AND SG1526J SWITCHED-MODE POWER SUPPLY CONTROL CIRCUITS FEATURES • 8 V t o 3 5 V O p e r a tio n • Dual 10 0 m A S o u r c e / S in k O u tp u ts • In te r n a l R e g u la to r	OCR Scan	PDF	SG3526J, SG2526J SG1526J) MQ-64

SPRAGUE CT SERIES Search Results

SPRAGUE CT SERIES Result Highlights (2)

SPRAGUE CT SERIES Datasheets Context Search

Unitrode Linear Integrated Circuits Data and Application

Unitrode Linear Integrated Circuits Data and Application

transistor smd z9

AGRA10E

ti c11b

transistor equivalent table 557

Z9 TRANSISTOR SMD

Untitled

AGR18090EF

JESD22-C101A

AGR045010

PT6724

RK73H2A10R0F

100B100JW500X

AGR09030GUM

2N4265

TP2222A

elna rsh

Sprague extralytic

3360D

GAE19000

Hall Effect 3 pin ugn

motorola transistor 2N2907A

MQ-64