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    2N6925 Search Results

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    Quest Components 2N6925A 1
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    Vishay Semiconductors 2N6925A

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6925A 1
    • 1 $40.1198
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    • 1000 $40.1198
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    2N6925 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6925 General Semiconductor High Power NPN Switch Plus III Transistors Scan PDF
    2N6925 General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
    2N6925 Semiconductor Technology NPN & PNP High Voltage Silicon High Power Transistors Scan PDF
    2N6925A General Semiconductor High Power NPN Switch Plus III Transistors Scan PDF
    2N6925A General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF

    2N6925 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N7058

    Abstract: ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066
    Text: STI Type: VNL005A Notes: Breakdown Voltage: 350 Continuous Current: 25 RDS on Ohm: .20 Trans Conductance Mhos: 10 Trans Conductance A: 10 Gate Threshold min: 2.0 Gate Threshold max: 5.0 Resistance Switching ton: 60 Resistance Switching toff: 180 Resistance Switching ID: 20


    Original     		PDF VNL005A O-204AA/TO-3 VNM006A VNM005A 2N1717 2N1890 O-205AD/TO-39 2N7058 ytf830 2N7057 2N769 YTF840 2n1565 VNP006A VNM005A 2SA1091 2N7066

    BUV-481

    Abstract: BUV481 2n6571 BUS14 KSG31203 2SC2761 sanken str 450 bur21 ksg3
    Text: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 970 Manufacturer Ie Max (A) V(BR)CEO (V) fT hFE Min Max (Hz) leBO Max (A) tr Max tf Max (8) (8) 500n 500n .70u .70u .70u 1.0u 1.0u 1.0u 2.0 1.0u 1.0u .80u


    Original     		PDF BUR24 BUS14 BUV481 Oisc-42 OT-93 O-247var BUV-481 BUV481 2n6571 KSG31203 2SC2761 sanken str 450 bur21 ksg3

    Sprague extralytic

    Abstract: 2N6925A 6924a 2N6925 2N6924 2N6924A IRF9130 VP1206N1 tvs diode stacking Reliability, Inc VP12
    Text: SßUÄRE D CO/ 3918590 GENERAL GENERAL ÖSESSDfi SEMICONDUCTOR General 3^* Semiconductor ^ « Industries, Inc. HIGH POWER NPN DDD21bb 95D 02166 2N6924 2N6924A 2N6925 2N6925A « Q U H R B T I COMPANY Switch P/US !/!TRANSISTORS These NPN silicon transistors offer an unprecedented combination of speed and ruggedness


    OCR Scan     		PDF 2N6924 2N6924A 2N6925 2N6925A 0tO-95O-1942 Sprague extralytic 2N6925A 6924a IRF9130 VP1206N1 tvs diode stacking Reliability, Inc VP12

    2N6925

    Abstract: TO3 package 2n6924
    Text: O General Semiconductor Industries, Inc. * NPN TRANSISTOR CHIP " Typical Device Types: 2N6924, 2N6925 37 " 35 AMP Bonding Pad Areas Fast Switching Base 1 135x28 mils Emitter (1)49 x 30 mils Typical Switching Front Metallization: Aluminum Back Metallization:


    OCR Scan     		PDF 2N6924, 2N6925 135x28 20nsec 90nsec 1300nsec 150nsec 50mAckage) 2N6925 TO3 package 2n6924

    Untitled

    Abstract: No abstract text available
    Text: GENERAL SEMICONDUCTOR • 3918590 G EN ER A L "75 ^ 72C SEMI CONDUCTOR General Semiconductor Industries, Inc • j> T | 0001^37 0 1 .9 3 7 T |~ 7^ 3 3 - ¿ > 3 ~ NPN T R A N S IS T O R CH IP « 07 » S q U R R E □ COMPANY Typical Device Types: 2N6924, 2N6925


    OCR Scan     		PDF 2N6924, 2N6925 20nsec 175nsec TWX910-950-1942

    Sprague extralytic

    Abstract: 2N6925A 2N6924A DIODE ED 11 2n6924
    Text: 2N6924 2N6924A 2N6925 2N6925A ^ General ^ ^ Semiconductor ^ - Industries, Inc. Switch HIGH POWER NPN TRANSISTORS These NPN silicon transistors offer an unprecedented combination of speed and ruggedness for use in high speed switching systems. This unique series also features General Semi­


    OCR Scan     		PDF 2N6924 2N6924A 2N6925 2N6925A Sustainin81 2N6924, 2N6924A, 2N6925, 852B1 Sprague extralytic 2N6925A DIODE ED 11

    TIC125

    Abstract: 2N6925A ic 921 transistor VCE 1000V 2N6678 2N6921A 2N6923A 2N6924A MJ16018 SFT6925A
    Text: *— t t u ' - -— SFT5925A NPN HIGH VOLTAGE HIGH SPEED POUJER TRANSISTOR 60 AMPS, 1000V 5TYLE CASE TO —3 WI TH JEDEC .060 PINS ► ► ► ► ► R A X SSDI 14849 F I R E S T O N E BLVD. LA MIRADA, CA. 9 0 6 3 8 FAX 213 9 2 1 - 9 6 6 0


    OCR Scan     		PDF SFT5925A 100KHz) 2N6678, 2N6921A, 2N6923A, 2N6924A, 2N6925A, MJ16018 60AMPS SFT6925A TIC125 2N6925A ic 921 transistor VCE 1000V 2N6678 2N6921A 2N6923A 2N6924A MJ16018

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


    OCR Scan     		PDF

    GSTU4040

    Abstract: 2n6547 jantx
    Text: \ Ic = 2 .0 A M P S DEVICE TYPE 2N4300 2N4863 2N4864 2N5148 ^N S150 VOLTS B^cbo/ BVcev VOLTS ^EBO VOLTS @100°C WATTS Min. Mix 80 120 120 80 80 100 140 140 100 100 8.0 8.0 8.0 6.0 6.0 15.0 4.0 16.0 40.0 4.0 3 0 -1 2 0 5 0 -1 5 0 5 0 -1 5 0 3 0 - 90 7 0 -2 0 0


    OCR Scan     		PDF 2N4300 2N4863 2N4864 2N5148 2N3418 2N3419 2N3420 2N3421 2N3506 2N3507 GSTU4040 2n6547 jantx

    c 3421 transistor

    Abstract: GSRU20040 2n6924 gsru200 2N2891
    Text: Basic Characteristics All NPN silicon bipolar power switching transistors manufactured by General Semiconductor Industries, Inc. are available in die or wafer form. General Semiconductor provides as a minimum for every chip order: A. 100% electrical probe test to low current parameters 15A max. .


    OCR Scan     		PDF MIL-STD-750, MIL-STD-883C, c 3421 transistor GSRU20040 2n6924 gsru200 2N2891

    2N3729

    Abstract: 2N3551 2N6925A 2N6583 2N6923 2n6924
    Text: AVAILABLE GEOMETRIES — SORTED BY Ic MAX lcMAX BV ceo Ran§e BV ebo Ran8e Low Current HfE From V To (V) From (V) To (V) @ lc mA Mid-Range HfE High Current HtE Typ VCE(sat) Typ Typ Cib @ 0.5V Cob @ 10V ^S/b A Geom. Pol. Use Code 0.03 0014 PNP 2 10 25 4 6


    OCR Scan     		PDF 2N6340 2N6341 2N6350 2N6351 2N6352 2N6353 2N6378 2N6379 2N6381 2N6382 2N3729 2N3551 2N6925A 2N6583 2N6923 2n6924

    TLP 527

    Abstract: IR5065 transistor TIP 350 TLP-531 ST555 2N6676 IR5061 IR5066 ST-550 TLP 535
    Text: kn| I SEnlCONDUCTOR TECHNOLOGY OSE D | fll3bM5fl □ D□ □ B5 *4 M [ 1 ^ * T - 5 S .- 0 / NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS Industry Type Power Dissipation @25 "C watts VCEV (volts) 2N6672 2N6673 2N6674 2N6675 2N6676 2N6672 2N6673


    OCR Scan     		PDF T-53--0/ 2N6672 2N6673 2N6674 2N6675 2N6676 TLP 527 IR5065 transistor TIP 350 TLP-531 ST555 IR5061 IR5066 ST-550 TLP 535

    Untitled

    Abstract: No abstract text available
    Text: SOLID STATE DEVICES INC 50E D • Ö3bb011 Q 0 0 2 n 0 2 SFT6925A NPSM HIGH VOLTAGE HIGH S P E E D POUJER T R A N S I S T O R 6 0 AMPS, 1000V CASE J E D E C STYL-E " T O — 3 WITH . 0 6 0 P I N S ► ► R A T I M Collector-Base Emitter-Base Collector FAX


    OCR Scan     		PDF 3bb011 SFT6925A 100KHz) 2N6921A, 2N6923A, 2N6924A, 2N6925A, 60AMPS 20Adc, 30Adc,

    RBSOA

    Abstract: transistor crossover
    Text: SWITCHING TRANSISTOR FUNDAMENTALS The advances in the technology of bipolar switching power transistors have resulted in devices which com­ bine high-voltage capability, speed, and ruggedness previously thought impossible to obtain in a single transistor. As an example, General Semiconductor


    OCR Scan     		PDF 2N6925A RBSOA transistor crossover