Untitled
Abstract: No abstract text available
Text: PDF: 2003 Jan 10 Philips Semiconductors Package outline Earless flanged LDMOST ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 5 Q 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT
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OT502B
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Untitled
Abstract: No abstract text available
Text: PDF: 2000 Jan 10 Philips Semiconductors Package outline Earless flanged LDMOST ceramic package; 2 leads SOT502B Package under development Philips Semiconductors reserves the right to make changes without notice. D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b
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OT502B
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sot502
Abstract: No abstract text available
Text: Package outline Earless flanged ceramic package; 2 leads SOT502B D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 5 Q 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions UNIT A b c mm 4.72 3.43 12.83 12.57 0.15 0.08 inches
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OT502B
sot502
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philips 1966
Abstract: No abstract text available
Text: PDF: 1999 Dec 17 Philips Semiconductors Package outline Earless flanged LDMOST package; 2 leads SOT502B Package under development Philips Semiconductors reserves the right to make changes without notice. D A F 3 D D1 c U1 1 L H E1 U2 E 2 w2 M D M b 5 Q 10 mm
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OT502B
81ips
philips 1966
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BLS6G2731-120
Abstract: No abstract text available
Text: BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1.
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BLS6G2731-120;
BLS6G2731S-120
BLS6G2731-120
6G2731S-120
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SOT539A
Abstract: SOT975B SOT540A SOT538A sot538b sot988 SOT608B
Text: Air-cavity plastic packages SOT987B SOT895A Bias/temperature sensing SOT981A SOT988B SOT896B Bias/temperature sensing SOT986B Push-pull configuration SOT982A MMIC configuration SOT980A SOT1015BG Bias/temperature sensing Increase the flexibility of application-specific design by using LDMOS RF power
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OT987B
OT895A
OT981A
OT988B
OT896B
OT986B
OT982A
OT980A
OT1015BG
OT538A
SOT539A
SOT975B
SOT540A
SOT538A
sot538b
sot988
SOT608B
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BLS6G3135S-120
Abstract: BLS6G3135-120
Text: BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance
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BLS6G3135-120;
BLS6G3135S-120
BLS6G3135-120
6G3135S-120
BLS6G3135S-120
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BLF6G20-110
Abstract: BLF6G20LS-110 RF35
Text: BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 — 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance
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BLF6G20-110;
BLF6G20LS-110
BLF6G20-110
BLF6G20LS-110
RF35
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sot1244c
Abstract: RF Power blf8g10 BLF8G10LS sot1242 how to test transistor "RF Power Transistor" sot539b RF power transistor
Text: RF Power Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth Factsheet 001 — July 2012 Factsheet 1. Gen8 LDMOS RF power transistor with Video Bandwidth VBW The proliferation of standards in the cellular base-station market has triggered power
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70MHz.
60MHz
sot1244c
RF Power
blf8g10
BLF8G10LS
sot1242
how to test transistor
"RF Power Transistor"
sot539b
RF power transistor
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LPC2148 i2c
Abstract: BGB210S lpc2148 interfacing 2.8" TFT LCD DISPLAY BGB210 embedded c code to interface lpc2148 with sensor BGW200 TDA8932T tda8920bj NXP PN531 TDA8947J equivalent
Text: Building blocks for vibrant media Highlights of the NXP product portfolio Building blocks for vibrant media At NXP Semiconductors, the new company founded by Philips, we’re driven by a single purpose — to deliver vibrant media technologies that create better sensory experiences.
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OT363
SC-88)
LPC2148 i2c
BGB210S
lpc2148 interfacing 2.8" TFT LCD DISPLAY
BGB210
embedded c code to interface lpc2148 with sensor
BGW200
TDA8932T
tda8920bj
NXP PN531
TDA8947J equivalent
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BLF7G27LS-100
Abstract: BLF7G27L-100 ACPR1980 BLF7G27 flanged pin
Text: BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 2 — 5 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF7G27L-100;
BLF7G27LS-100
ACPR885k
IS-95
IS-95
BLF7G27L-100
7G27LS-100
BLF7G27LS-100
ACPR1980
BLF7G27
flanged pin
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BLF7G24LS
Abstract: BLF7G24L-140 BLF7G24LS-140 nxp semiconductors
Text: BLF7G24L-140; BLF7G24LS-140 Power LDMOS transistor Rev. 1 — 5 August 2010 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance
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BLF7G24L-140;
BLF7G24LS-140
IS-95
ACPR885k
IS-95
BLF7G24L-140
7G24LS-140
BLF7G24LS
BLF7G24LS-140 nxp semiconductors
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Untitled
Abstract: No abstract text available
Text: BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance
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BLF10M6135;
BLF10M6LS135
BLF10M6135
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BLF7G27L-100
Abstract: No abstract text available
Text: BLF7G27L-100; BLF7G27LS-100 Power LDMOS transistor Rev. 01 — 21 April 2010 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF7G27L-100;
BLF7G27LS-100
IS-95
ACPR885k
IS-95
BLF7G27L-100
7G27LS-100
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BLF7G22LS-200
Abstract: BLF7G22L BLF7G
Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 01 — 19 April 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance
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BLF7G22L-200;
BLF7G22LS-200
BLF7G22L-200
7G22LS-200
BLF7G22LS-200
BLF7G22L
BLF7G
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Untitled
Abstract: No abstract text available
Text: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.
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philips Electrolytic Capacitor
Abstract: blf4g20-110b ACPR400 ACPR600 BLF4G20S-110B RF35 Philips Electrolytic
Text: BLF4G20-110B; BLF4G20S-110B UHF power LDMOS transistor Rev. 01 — 23 January 2006 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1: Typical performance
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BLF4G20-110B;
BLF4G20S-110B
ACPR400
ACPR600
ACPR400
ACPR600
philips Electrolytic Capacitor
blf4g20-110b
BLF4G20S-110B
RF35
Philips Electrolytic
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BLF6G10LS-200RN
Abstract: BLF6G10-200RN RF35 A1118
Text: BLF6G10-200RN; BLF6G10LS-200RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance
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BLF6G10-200RN;
BLF6G10LS-200RN
BLF6G10-200RN
10LS-200RN
BLF6G10LS-200RN
RF35
A1118
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BLF6G10LS-135RN
Abstract: 2360D BLF6G10-135RN RF35 1961 30 TRANSISTOR
Text: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance
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BLF6G10-135RN;
BLF6G10LS-135RN
BLF6G10-135RN
10LS-135RN
BLF6G10LS-135RN
2360D
RF35
1961 30 TRANSISTOR
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transistor D 1002
Abstract: BLF6G22LS-100 RF35
Text: BLF6G22LS-100 Power LDMOS transistor Rev. 02 — 31 March 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.
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BLF6G22LS-100
BLF6G22LS-100
transistor D 1002
RF35
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cw 7808
Abstract: BLF0810-180 7808 voltage regulator MDB162 BLF0810S-180 MDB161 gp 538 e/ic 7808 pin out
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 Philips Semiconductors Product specification Base station LDMOS transistors BLF0810-180; BLF0810S-180
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M3D379
M3D461
BLF0810-180;
BLF0810S-180
SCA75
613524/06/pp16
cw 7808
BLF0810-180
7808 voltage regulator
MDB162
BLF0810S-180
MDB161
gp 538
e/ic 7808 pin out
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Untitled
Abstract: No abstract text available
Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 3 — 1 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance
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BLF7G22L-200;
BLF7G22LS-200
BLF7G22L-200
7G22LS-200
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Untitled
Abstract: No abstract text available
Text: BLF6G27-100; BLF6G27LS-100 WiMAX power LDMOS transistor Rev. 01 — 3 May 2010 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance
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BLF6G27-100;
BLF6G27LS-100
ACPR885k
ACPR1980k
ACPR10M
BLF6G27-100
BLF6G27LS-100
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Untitled
Abstract: No abstract text available
Text: BLF2425M7L140; BLF2425M7LS140 Power LDMOS transistor Rev. 3 — 6 September 2012 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for Industrial, Scientific and Medical ISM applications at frequencies from 2400 MHz to 2500 MHz.
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BLF2425M7L140;
BLF2425M7LS140
BLF2425M7L140
BLF2425M7LS140
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