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    SOT539A Search Results

    SOT539A Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SOT539A NXP Semiconductors Flanged balanced ceramic package; 2 mounting holes; 4 leads Original PDF
    SOT539A_112 NXP Semiconductors CDFM4; blister pack; standard product orientation 12NC ending 112 Original PDF

    SOT539A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    philips H1

    Abstract: sot539a
    Text: PDF: 1999 Dec 09 Philips Semiconductors Package outline Flanged balanced LDMOST package; 2 mounting holes; 4 leads SOT539A Package under development Philips Semiconductors reserves the right to make changes without notice. D A F D1 U1 B q C w2 M C M H1 1 c


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    PDF OT539A philips H1 sot539a

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF power LDMOS transistor Objective specification 1998 Nov 19 Objective specification UHF power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION • Easy power control


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    PDF M3D427 BLF2048 OT539A SCA60 125108/00/02/pp8

    Capacitor Tantal SMD

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Nov 23 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION


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    PDF M3D427 BLF2048 OT539A) 125108/00/01/pp11 Capacitor Tantal SMD

    Capacitor Tantal SMD

    Abstract: capacitor 0,1 k 250 mkt philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Jul 14 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION


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    PDF M3D427 BLF2048 OT539A) 125108/00/01/pp11 Capacitor Tantal SMD capacitor 0,1 k 250 mkt philips

    SOT539A

    Abstract: No abstract text available
    Text: PDF: 2000 Mar 08 Philips Semiconductors Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L 3 A E w1 M A M B M 4 w3 M b Q e 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions


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    PDF OT539A SOT539A

    2222-581

    Abstract: capacitor MKT Philips PHILIPS MKT CAPACITOR BLF2048 capacitor 400 MKT philips C26C27
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 2000 May 24 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain


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    PDF M3D427 BLF2048 OT539A 603516/09/pp11 2222-581 capacitor MKT Philips PHILIPS MKT CAPACITOR BLF2048 capacitor 400 MKT philips C26C27

    BLF2022-120

    Abstract: BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification 2000 Dec 12 Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor BLF2022-120 PINNING - SOT539A FEATURES • High power gain


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    PDF M3D427 BLF2022-120 OT539A 603516/09/pp7 BLF2022-120 BP317

    transistor 2201

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 May 31 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION


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    PDF M3D427 BLF2048 BLF2048 OT539A 125108/00/01/pp8 transistor 2201

    SOT539A

    Abstract: No abstract text available
    Text: 4 CD FM SOT539A CDFM4; blister pack; standard product orientation 12NC ending 112 Rev. 1 — 29 November 2012 Packing information 1. Packing method Blister cover ESD Label Foam Blister bottom ESD Label Printed plano box Space for additional label Preprinted ESD warning


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    PDF OT539A msc071 OT539A SOT539A

    SOT539

    Abstract: No abstract text available
    Text: Package outline Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A D A F D1 U1 B q C w2 M C M H1 1 c 2 E1 p H U2 5 L A 3 E w1 M A M B M 4 w3 M b Q e 5 10 mm scale DIMENSIONS millimetre dimensions are derived from the original inch dimensions


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    PDF OT539A OT539A SOT539

    Capacitor Tantal SMD

    Abstract: Tantal SMD transistor SMD 2201
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2048 UHF push-pull power LDMOS transistor Preliminary specification 1999 Oct 18 Preliminary specification UHF push-pull power LDMOS transistor BLF2048 PINNING - SOT539A FEATURES • High power gain PIN DESCRIPTION


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    PDF M3D427 BLF2048 OT539A) 125108/00/01/pp12 Capacitor Tantal SMD Tantal SMD transistor SMD 2201

    BLF6G22-180PN

    Abstract: No abstract text available
    Text: BLF6G22-180PN Power LDMOS transistor Rev. 02 — 23 April 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.


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    PDF BLF6G22-180PN BLF6G22-180PN

    SOT539A

    Abstract: SOT975B SOT540A SOT538A sot538b sot988 SOT608B
    Text: Air-cavity plastic packages SOT987B SOT895A Bias/temperature sensing SOT981A SOT988B SOT896B Bias/temperature sensing SOT986B Push-pull configuration SOT982A MMIC configuration SOT980A SOT1015BG Bias/temperature sensing Increase the flexibility of application-specific design by using LDMOS RF power


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    PDF OT987B OT895A OT981A OT988B OT896B OT986B OT982A OT980A OT1015BG OT538A SOT539A SOT975B SOT540A SOT538A sot538b sot988 SOT608B

    sot1244c

    Abstract: RF Power blf8g10 BLF8G10LS sot1242 how to test transistor "RF Power Transistor" sot539b RF power transistor
    Text: RF Power Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth Factsheet 001 — July 2012 Factsheet 1. Gen8 LDMOS RF power transistor with Video Bandwidth VBW The proliferation of standards in the cellular base-station market has triggered power


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    PDF 70MHz. 60MHz sot1244c RF Power blf8g10 BLF8G10LS sot1242 how to test transistor "RF Power Transistor" sot539b RF power transistor

    150P

    Abstract: BLF7G27LS-150P ACPR1980 ACPR885
    Text: BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 — 12 November 2010 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical performance


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    PDF BLF7G27L-150P; BLF7G27LS-150P IS-95 ACPR885k IS-95 BLF7G27L-150P 7G27LS-150P 150P BLF7G27LS-150P ACPR1980 ACPR885

    1800 ldmos

    Abstract: SOT539A
    Text: BLF6G20-230PRN Power LDMOS transistor Rev. 01 — 2 December 2008 Objective data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


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    PDF BLF6G20-230PRN BLF6G20-230PRN 1800 ldmos SOT539A

    BC548 TRANSISTOR REPLACEMENT

    Abstract: TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587
    Text: 5.2 5.4 5.46 5.124 5.130 5.130 5.140 5.180 Introduction Diodes & Rectifiers Transistors Triacs,Thyristors and Diacs Sensors Cross Reference General Application discretes Cross Reference Power discretes Cross Reference RF discretes Discrete Components 5.1 Introduction


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    PDF BAP1321-02 BAP65-05 BAP65-03 BAP65-05W BAP65-02 BAP63-03 BAP63-02 BAP64-03 BAP64-02 BB143 BC548 TRANSISTOR REPLACEMENT TYN612 pin diagram 1n4007 smd, toshiba S0817MH TYN604 scr pin diagram kmz51 compass TRANSISTOR S1A 64 smd toshiba l 300 laptop motherboard circuit diagram JFET TRANSISTOR REPLACEMENT GUIDE j201 replacements for transistor NEC D 587

    TRANSISTOR 726

    Abstract: 800B BLL6H1214-500 BV 726 B BV 726 C
    Text: BLL6H1214-500 LDMOS L-band radar power transistor Rev. 02 — 1 April 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for L-band radar applications in the 1.2 GHz to 1.4 GHz range. Table 1. Test information


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    PDF BLL6H1214-500 BLL6H1214-500 TRANSISTOR 726 800B BV 726 B BV 726 C

    BLF6G20(S)-45

    Abstract: No abstract text available
    Text: BLF6G20-230PRN; BLF6G20S-230PRN Power LDMOS transistor Rev. 02 — 9 February 2010 Product data sheet 1. Product profile 1.1 General description 230 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


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    PDF BLF6G20-230PRN; BLF6G20S-230PRN BLF6G20-230PRN 20S-230PRN BLF6G20(S)-45

    BLF578

    Abstract: AN10858 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X ATC800B471JT200X DVB-T transistor amplifier
    Text: AN10858 174 MHz to 230 MHz DVB-T power amplifier with the BLF578 Rev. 02 — 26 March 2010 Application note Document information Info Content Keywords BLF578, LDMOS, DVB, planar balun Abstract This application note describes the design and performance of a 200 W


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    PDF AN10858 BLF578 BLF578, AN10858 BLF578 planar transformer theory DVB-T Schematic Transmission-Line Conversion Transformers TIC4000 planar transformer layout ATC800B101GT500X ATC800B471JT200X DVB-T transistor amplifier

    Untitled

    Abstract: No abstract text available
    Text: BLF8G24L-200P; BLF8G24LS-200P Power LDMOS transistor Rev. 3 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz. Table 1. Typical performance


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    PDF BLF8G24L-200P; BLF8G24LS-200P BLF8G24L-200P LS-200P

    Untitled

    Abstract: No abstract text available
    Text: BLF888A; BLF888AS UHF power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


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    PDF BLF888A; BLF888AS narrow15 BLF888A

    smd transistor L33

    Abstract: dvbt transmitter UT-090C-25 dvb-t2 SMD l33 Transistor
    Text: BLF879P UHF power LDMOS transistor Rev. 1 — 23 August 2011 Product data sheet 1. Product profile 1.1 General description A 500 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ideal for digital and analog


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    PDF BLF879P smd transistor L33 dvbt transmitter UT-090C-25 dvb-t2 SMD l33 Transistor

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS Philips Sem iconductors PHILIPS P relim inary specification UHF power LDMOS transistor BLF2048 FEATURES PINNING - SOT539A • H igh p o w e r ga in PIN DESCRIPTION • E a s y p o w e r c o n tro l 1 d ra in 1 • E x c e lle n t ru g g e d n e s s


    OCR Scan
    PDF BLF2048 OT539A SCA63