Untitled
Abstract: No abstract text available
Text: Package outline Earless flanged ceramic package; 6 leads SOT1244C 0.3 mm gauge plane D Lp F A 3 D1 y Q detail X v A U1 4 H c B 1 X 5 E1 U2 6 A 2 7 b1 b E w2 B θ e 5 10 mm scale Dimensions Unit 1 b b1 c max 4.75 nom min 3.45 1.41 12.83 0.18 20.02 19.96 1.14
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OT1244C
0244C
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-210V; BLF8G20LS-210GV Power LDMOS transistor Rev. 1 — 25 February 2014 Objective data sheet 1. Product profile 1.1 General description 210 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1990 MHz.
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BLF8G20LS-210V;
BLF8G20LS-210GV
BLF8G20LS-210V
20LS-210GV
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sot1244c
Abstract: RF Power blf8g10 BLF8G10LS sot1242 how to test transistor "RF Power Transistor" sot539b RF power transistor
Text: RF Power Factsheet Gen8 LDMOS RF power transistor with Video Bandwidth Factsheet 001 — July 2012 Factsheet 1. Gen8 LDMOS RF power transistor with Video Bandwidth VBW The proliferation of standards in the cellular base-station market has triggered power
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70MHz.
60MHz
sot1244c
RF Power
blf8g10
BLF8G10LS
sot1242
how to test transistor
"RF Power Transistor"
sot539b
RF power transistor
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Untitled
Abstract: No abstract text available
Text: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 1 — 4 November 2013 Objective data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.
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BLF8G24LS-150V;
BLF8G24LS-150GV
BLF8G24LS-150V
8G24LS-150GV
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transistor 742
Abstract: j494 transistor blf8g22ls
Text: BLF8G22LS-270V; BLF8G22LS-270GV Power LDMOS transistor Rev. 2 — 3 December 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.
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BLF8G22LS-270V;
BLF8G22LS-270GV
BLF8G22LS-270V
8G22LS-270GV
transistor 742
j494 transistor
blf8g22ls
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transistor j241
Abstract: transistor j239 J241 transistor
Text: BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev. 2 — 10 December 2012 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2110 MHz to 2170 MHz.
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BLF8G22LS-200V;
BLF8G22LS-200GV
BLF8G22LS-200V
8G22LS-200GV
transistor j241
transistor j239
J241 transistor
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Untitled
Abstract: No abstract text available
Text: BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev. 1 — 27 September 2013 Objective data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.
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BLF8G09LS-270W;
BLF8G09LS-270GW
BLF8G09LS-270W
8G09LS-270GW
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Untitled
Abstract: No abstract text available
Text: BLF8G20LS-140V; BLF8G20LS-140GV Power LDMOS transistor Rev. 1 — 7 February 2014 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1805 MHz to 1990 MHz.
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BLF8G20LS-140V;
BLF8G20LS-140GV
BLF8G20LS-140V
20LS-140GV
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Untitled
Abstract: No abstract text available
Text: BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 1 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
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BLF8G27LS-150V;
BLF8G27LS-150GV
BLF8G27LS-150V
8G27LS-150GV
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BLF8G22LS-270V
Abstract: No abstract text available
Text: BLF8G22LS-270V; BLF8G22LS-270GV Power LDMOS transistor Rev. 1 — 13 June 2012 Objective data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance
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BLF8G22LS-270V;
BLF8G22LS-270GV
BLF8G22LS-270V
8G22LS-270GV
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2305 transistor
Abstract: No abstract text available
Text: BLF8G24LS-150V; BLF8G24LS-150GV Power LDMOS transistor Rev. 3 — 12 May 2014 Product data sheet 1. Product profile 1.1 General description 150 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.
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BLF8G24LS-150V;
BLF8G24LS-150GV
BLF8G24LS-150V
8G24LS-150GV
2305 transistor
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UPC8236
Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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Untitled
Abstract: No abstract text available
Text: BLF8G22LS-200V; BLF8G22LS-200GV Power LDMOS transistor Rev. 1 — 13 June 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance
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BLF8G22LS-200V;
BLF8G22LS-200GV
BLF8G22LS-200V
8G22LS-200GV
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MPF102 spice model
Abstract: BLF278 mosfet HF amplifier BLF4G08LS-160A x-band mmic core chip BLF4G08LS-160 BIT 3713 IB3135 toshiba smd marking code transistor bgu7041 TEA6848H
Text: RF Manual 15th edition Application and design manual for High Performance RF products May 2011 High Performance RF for the most demanding applications NXP’s RF Manual makes design work much easier NXP's RF Manual is one of the most important reference tools on the market for
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te121
MPF102 spice model
BLF278 mosfet HF amplifier
BLF4G08LS-160A
x-band mmic core chip
BLF4G08LS-160
BIT 3713
IB3135
toshiba smd marking code transistor
bgu7041
TEA6848H
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Untitled
Abstract: No abstract text available
Text: BLF8G27LS-150V; BLF8G27LS-150GV Power LDMOS transistor Rev. 3 — 26 June 2013 Product data sheet 1. Product profile 1.1 General description 150W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
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BLF8G27LS-150V;
BLF8G27LS-150GV
BLF8G27LS-150V
8G27LS-150GV
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BA 7891 NG
Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Text: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进
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PRF957
TFF1003HN
TFF1007HN
TFF1014HN
TFF1015HN
TFF1017HN
TFF11070HN
TFF11073HN
TFF11077HN
TFF11080HN
BA 7891 NG
bts 2140 1b
TFF1014
BLF4G08LS-160A
bf1107 spice model
BF862 spice model
RF transceiver 802.11AC
Multiple output LNB
802.11AC
BGU6104
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sot979
Abstract: No abstract text available
Text: Ceramic packages for RF Power Transistors SOT975B L x W x H (mm SOT538A (5.5 x 4.1 x 2.2 (mm) SOT1227A (7.1 x 6.9 x 3.3 (mm) SOT975C (7.1 x 6.9 x 3.3 (mm) (14.0 x 4.1 x 2.9 (mm) SOT1227B SOT467B (9.7 x 5.8 x 4.3 (mm) SOT467C (20.3 x 5.8 x 4.3 (mm)
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OT975B
OT538A
OT1227A
OT975C
OT1227B
OT467B
OT467C
OT1228A
OT1228B
OT608A
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BLF8G10LS-270V
Abstract: transistor full 2000 to 2012
Text: BLF8G10LS-270V; BLF8G10LS-270GV Power LDMOS transistor Rev. 1 — 3 December 2012 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 790 MHz to 960 MHz.
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BLF8G10LS-270V;
BLF8G10LS-270GV
BLF8G10LS-270V
8G10LS-270GV
transistor full 2000 to 2012
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Untitled
Abstract: No abstract text available
Text: BLF8G27LS-100V; BLF8G27LS-100GV Power LDMOS transistor Rev. 4 — 26 September 2013 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
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BLF8G27LS-100GV
BLF8G27LS-100V
27LS-100GV
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BB 509 varicap diode
Abstract: BLF6G22L ON503 tea6849 bf1107 spice model PIN diode ADS model ULTRA FAST DIODES SANYO catalog RF MANUAL diode varicap BB 112 adi cmos bipolar SiGe
Text: UNLEASH RF RF Manual 17 edition th Application and design manual for High Performance RF products June 2013 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s
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2395 transistor
Abstract: No abstract text available
Text: BLF8G24LS-100V; BLF8G24LS-100GV Power LDMOS transistor Rev. 2 — 28 February 2014 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.
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BLF8G24LS-100V;
BLF8G24LS-100GV
BLF8G24LS-100V
24LS-100GV
2395 transistor
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BGU7073
Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by
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Abstract: No abstract text available
Text: BLF8G22LS-270V; BLF8G22LS-270GV Power LDMOS transistor Rev. 1 — 13 June 2012 Objective data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance
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BLF8G22LS-270V;
BLF8G22LS-270GV
BLF8G22LS-270V
8G22LS-270GV
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Untitled
Abstract: No abstract text available
Text: BLF8G09LS-270W; BLF8G09LS-270GW Power LDMOS transistor Rev. 2 — 17 January 2014 Product data sheet 1. Product profile 1.1 General description 270 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 716 MHz to 960 MHz.
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BLF8G09LS-270W;
BLF8G09LS-270GW
BLF8G09LS-270W
8G09LS-270GW
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