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    LGA 1156 PIN OUT diagram

    Abstract: QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram
    Text: DIP8-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight g Rev. No./Last Revised Epoxy resin 42 alloy Solder plating (≥5µm) 0.46 TYP. 2/Dec. 11, 1996 DIP14-P-300-2.54 5 Package material Lead frame material Pin treatment Package weight (g)


    Original     		PDF DIP8-P-300-2 DIP14-P-300-2 DIP16-P-300-2 DIP18-P-300-2 MIL-M-38510 MIL-STD-883 LGA 1156 PIN OUT diagram QSJ-44403 LGA 1150 Socket PIN diagram LGA 1155 Socket PIN diagram IC107-26035-20-G LGA 1151 PIN diagram REFLOW lga socket 1155 IC107-3204-G TB 2929 H alternative LGA 1155 pin diagram

    CMOS ASYNCHRONOUS FIFO 32 PIN

    Abstract: LH540202 32-PIN
    Text: LH540202 CMOS 1024 x 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns The LH540202 is a FIFO First-In, First-Out memory device, based on fully-static CMOS dual-port SRAM technology, capable of storing up to 1024 nine-bit words. It


    Original     		PDF LH540202 LH540202 32PLCC 32-pin, 450-mil 28-pin, 300-mil DIP28-W-300) CMOS ASYNCHRONOUS FIFO 32 PIN 32-PIN

    LH540203

    Abstract: LH5498 32-PIN
    Text: LH540203 CMOS 2048 x 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns The LH540203 is a FIFO First-In, First-Out memory device, based on fully-static CMOS dual-port SRAM technology, capable of storing up to 2048 nine-bit words. It


    Original     		PDF LH540203 LH540203 32PLCC 32-pin, 450-mil 28-pin, 300-mil DIP28-W-300) LH5498 32-PIN

    425M

    Abstract: DIP18 DIP20 DIP28 DIP32 DIP40 SOJ28-P-400-1 PGA wire bonding IPGA400-C-S33U-1 PGA240
    Text: 2. 外形寸法図 2. 外形寸法図 2 2-1. パッケージ外形寸法 - 2 2-1-1. パッケージ寸法表示記号 - 2 2-1-2. リード位置許容値について - 3


    Original     		PDF P-LFBGA144-1313-0 P-BGA256-2727-1 P-BGA352-3535-1 P-BGA420-3535-1 P-BGA560-3535-1 P-TFLGA32-0806-0 425M DIP18 DIP20 DIP28 DIP32 DIP40 SOJ28-P-400-1 PGA wire bonding IPGA400-C-S33U-1 PGA240

    LH52258A

    Abstract: SOJ8
    Text: LH52258A FEATURES • Fast Access Times: 20/25 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ FUNCTIONAL DESCRIPTION


    Original     		PDF LH52258A 28-Pin, 300-mil LH52258A 28SOJ300 SOJ8

    SOJ28-P-300-1

    Abstract: No abstract text available
    Text: SOJ28-P-300-1.27 Mirror finish 5 パッケージ材質 リードフレーム材質 端子処理方法・材質 パッケージ質量 g 版数/改版日 エポキシ樹脂 Cu アロイ 半田メッキ (≥5µm) 0.80 TYP. 3 版/96.12.5


    Original     		PDF SOJ28-P-300-1

    QSJ-50074

    Abstract: QSJ-44403 QFJ28-P-S450-1 QSJ-44574 SSOP60-P-700-0 SSOP30-P-56-0 SOP8-P-250-1 QSJ52627 sop44-p-600-1.27-k QFJ20
    Text: 7.包装 7. 包装 7-1. 包装形態 - 2 7-1-1. 通常包装 - 2 7-1-2. 防湿包装 - 3 7-2. 個装仕様 - 4


    Original     		PDF 300mil QSJ44400 DIP8P3002 DIP14P3002 DIP16P3002 DIP18P3002 DIP20P3002 DIP22P3002 DIP8G3002 QSJ-50074 QSJ-44403 QFJ28-P-S450-1 QSJ-44574 SSOP60-P-700-0 SSOP30-P-56-0 SOP8-P-250-1 QSJ52627 sop44-p-600-1.27-k QFJ20

    SOJ28-P-300-1

    Abstract: MSM52258
    Text: E2I0023-17-Y1 ¡ Semiconductor MSM52258 ¡ Semiconductor This version: MSM52258 Jan. 1998 Previous version: Aug. 1996 32,768-Word ¥ 8-Bit CMOS STATIC RAM DESCRIPTION The MSM52258 is a 32,768-word by 8-bit CMOS fast static RAM featuring a single 5 V power supply


    Original     		PDF E2I0023-17-Y1 MSM52258 768-Word MSM52258 768-word SOJ28-P-300-1

    TC5117445CSJ

    Abstract: No abstract text available
    Text: TO SHIBA_ TC5117445CSJ-40,-50,-60 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORD BY 4-BIT EDO HYPER PAGE DYNAMIC RAM DESCRIPTION The TC5117445CSJ is an EDO (Hyper Page) dynamic RAM organized as 4,194,304 words by 4 bits. The


    OCR Scan     		PDF TC5117445CSJ-40 304-WORD TC5117445CSJ 28-pin 17445CSJ-40 TC5117445CSJ SOJ28

    high level block diagram for asynchronous FIFO

    Abstract: DIP28-W-300 LH540202 LJH540202
    Text: LH540202 CMOS 1024 X 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns The LH540202 is a FIFO First-In, First-Out memory device, based onfully-staticCMOSdual-portSRAM tech­ nology, capable of storing up to 1024 nine-bit words. It


    OCR Scan     		PDF LH540202 LH5497 ArrVIDT/MS7202 LH5497H 28-Pin, 300-mil 32-Pin 32PLCC high level block diagram for asynchronous FIFO DIP28-W-300 LH540202 LJH540202

    Untitled

    Abstract: No abstract text available
    Text: LH52258A CMOS 32K x 8 Static RAM When E is LOW and W is HIGH, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs. Since the device is fully static in operation, new Read cycles can be


    OCR Scan     		PDF 28-Pin, 300-mil LH52258A 28soj300

    5Z25

    Abstract: No abstract text available
    Text: CMOS 32K x 8 Static RAM FEATURES • Fast Access Times: 20/25 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V + 10% Supply • Fully-Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ FUNCTIONAL DESCRIPTION


    OCR Scan     		PDF 28-Pin, 300-mil LH52258A 28DIP-1 LH52258A 5Z25

    Untitled

    Abstract: No abstract text available
    Text: LH521002C SHARP CMOS 256K x 4 Static RAM Data Sheet FEATURES The ‘L’ version will retain data down to a supply voltage of 2 V. A significantly lower current can be obtained Idr under this Data Retention condition. CMOS Standby Current (lSB2) ¡s reduced on the ‘L’ version with respect to


    OCR Scan     		PDF 28-pin, 300-mil 400-mil LH521002C 28SOJ400 LH521 28-Din.

    Untitled

    Abstract: No abstract text available
    Text: LH540204 CMOS 4096 X 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 20/25/35/50 ns • Fast-Fall-Through Time Architecture Based on CMOS Dual-Port SRAM Technology • Input Port and Output Port Have Entirely Independent Timing The LH540204 is a FIFO First-In, First-Out memory


    OCR Scan     		PDF LH540204 LH540204 32-pin, 450-mil 28-pin, 300-mil DIP28-W-300)

    TC5117440BSJ60

    Abstract: TC5117440BSJ TC5117440BSJ/BST-70
    Text: TOSHIBA TC5117440BSJ-60/70 PRELIMINARY 4,194,304 WORD X 4 BIT DYNAMIC RAM Description The TC5117440BSJ is the new generation dynamic RAM organized 4,194,304 word by 4 bits. The TC5117440BSJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


    OCR Scan     		PDF TC5117440BSJ-60/70 TC5117440BSJ 300mil) tcAC15. TC5117440BSJ60 TC5117440BSJ/BST-70

    Untitled

    Abstract: No abstract text available
    Text: LH540204 CMOS 4096 X 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 20/25/35/50 ns The LH540204 is a FIFO First-In, First-Out memory device, based on fully-static CMOS dual-port SRAM tech­ nology, capable of storing up to 4096 nine-bit words. It


    OCR Scan     		PDF LH540204 LH5499 Am/IDT/MS7204 28-Pin, 300-mil 32-Pin LH540204

    lh52258

    Abstract: No abstract text available
    Text: LH52258 / FEATURES CMOS 32K x 8 Static RAM When E is LOW and W is HIGH, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs. Since the device is fully static in operation, new Read cycles can be performed by simply changing the address.


    OCR Scan     		PDF LH52258 28-Pin, 300-mil LH52258 DIP28-P-300)

    Untitled

    Abstract: No abstract text available
    Text: LH52253 FEATURES • Fast Access Times: 17/20/25/35 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation CMOS 64K X 4 Static RAM The LH52253 offers an Output Enable G for use in managing the Data Bus. Bus contention jluring Write


    OCR Scan     		PDF LH52253 28-Pin, 300-mil LH52253 256K-bit LH52253. 28SK-DIP

    Untitled

    Abstract: No abstract text available
    Text: LH52253 FEATURES • Fast Access Times: 20/25/35 ns • Low Power Standby when Deselected • TTL Compatible I/O • 5 V ± 1 0 % Supply • Fully Static Operation • Common I/O for Low Pin Count • JEDEC Standard Pinouts • Packages: 28-Pin, 300-mil DIP


    OCR Scan     		PDF LH52253 28-Pin, 300-mil LH52253 LH52253.

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY LH540203 C M O S 2048 X 9 A sy n ch ro n o u s FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns The LH540203 is a FIFO First-In, First-Out memory device, based on fully-static CMOS dual-port SRAM tech­ nology, capable of storing up to 2048 nine-bit words. It


    OCR Scan     		PDF LH540203 LH5498 Am/IDT/MS7203 28-Pin, 300-mil 600-mil 32-Pin

    Untitled

    Abstract: No abstract text available
    Text: LH540201/02 PRELIMINARY CMOS 512 x 9 /1 0 2 4 x 9 A syn ch ro n o u s FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns The LH540201/02 is a FIFO First-In, First-Out mem­ ory device, based on fully-static CMOS dual-port SRAM


    OCR Scan     		PDF LH540201/02 LH5496/97 Am/IDT/MS7201/02 28-Pin, 300-mil 600-mil 32-Pin

    32PLCC

    Abstract: No abstract text available
    Text: LH540202 CMOS 1024 X 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns • Fast-Fall-Through Time Architecture Based on CMOS Dual-Port SRAM Technology • Input Port and Output Port Have Entirely Independent Timing


    OCR Scan     		PDF LH540202 LH5497 Am/IDT/MS7202 LH5497H 28-Pin, 300-mil 300-miis0j* 32-Pin 32-pin, 32PLCC

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55B328P/J-10/12 SILICON GATE BiCMOS 32,768 WORD x 8 BIT BiCMOS STATIC RAM Description The TC55B328P/J is a 262,144 bit high speed BiCMOS static random access memory organized as 32,768 words by 8 bits and operated from a single 5V supply. Toshiba’s BiCMOS technology and advanced circuit design enable high speed operation.


    OCR Scan     		PDF TC55B328P/J-10/12 TC55B328P/J 300mil 28-pin

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V328J-20/25/35 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 8 BIT CMOS STATIC RAM Description TheTC55V328J is a 262,144 bit CMOS high speed static random access memory organized as 32,768 words by 8 bits and designed to operate from a single 3.3V supply. Toshiba’s advanced CMOS technology and circuit design enable high speed, low


    OCR Scan     		PDF TC55V328J-20/25/35 TheTC55V328J TC55V328J 28-pin, 300mil 2b371