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    LH521002C Search Results

    LH521002C Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH521002CK-17 Sharp SRAM GP Single Port Original PDF
    LH521002CK-20 Sharp SRAM GP Single Port Original PDF
    LH521002CK-25 Sharp SRAM GP Single Port Original PDF
    LH521002CK-35 Sharp SRAM GP Single Port Original PDF
    LH521002CNK-17 Sharp SRAM GP Single Port Original PDF
    LH521002CNK-20 Sharp SRAM GP Single Port Original PDF
    LH521002CNK-25 Sharp SRAM GP Single Port Original PDF
    LH521002CNK-35 Sharp SRAM GP Single Port Original PDF

    LH521002C Datasheets Context Search

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    SOJ28-P-400

    Abstract: No abstract text available
    Text: LH521002C CMOS 256K x 4 Static RAM Data Sheet The ‘L’ version will retain data down to a supply voltage of 2 V. A significantly lower current can be obtained IDR under this Data Retention condition. CMOS Standby Current (ISB2) is reduced on the ‘L’ version with respect to


    Original
    PDF LH521002C 2613-banchi, J63428 SMT94020 SOJ28-P-400

    Untitled

    Abstract: No abstract text available
    Text: LH521002C SHARP CMOS 256K x 4 Static RAM Data Sheet FEATURES The ‘L’ version will retain data down to a supply voltage of 2 V. A significantly lower current can be obtained Idr under this Data Retention condition. CMOS Standby Current (lSB2) ¡s reduced on the ‘L’ version with respect to


    OCR Scan
    PDF 28-pin, 300-mil 400-mil LH521002C 28SOJ400 LH521 28-Din.

    Untitled

    Abstract: No abstract text available
    Text: SHARP LH521002C CMOS 256K x 4 Static RAM Data Sheet The ‘L’ version will retain data down to a supply voltage of 2 V. A significantly lower current can be obtained Idr under this Data Retention condition. CMOS Standby Current (lSB2) is reduced on the ‘L’ version with respect to


    OCR Scan
    PDF LH521002C 28-pin, 300-mil 400-mil 300-MILSOJ 28SOJ SOJ28-P-4QO)

    Spil polyimide system in package

    Abstract: B-629
    Text: SHARP LH521007C Data Sheet CMOS 128K X 8 Static RAM FEATURES When both Chip Enables are active and W is inactive, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs. Since the device is fully static in operation,


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    PDF 32-Pin, 300-mil 400-mil LH521007C 576-bit -65sC~ 2604C 1500G, LH521002CK Spil polyimide system in package B-629