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    K8D3216UBC-pi07

    Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
    Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM


    Original     		PDF BR-05-ALL-002 K8D3216UBC-pi07 K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm

    K6E0808C1C

    Abstract: K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C
    Text: PRELIMINARY K6E0808C1C-C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.


    Original     		PDF K6E0808C1C-C 32Kx8 12/15/20ns 8/10ns 8/10/10ns 7/10ns 28-TSOP1-0813 K6E0808C1C K6E0808C1C-12 K6E0808C1C-15 K6E0808C1C-20 K6E0808C1C-C

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY CMOS SRAM K6E0808V1C-C Document Title 32Kx8 Bit High Speed Static RAM 3.3V Operating , Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Jun. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.


    Original     		PDF K6E0808V1C-C 32Kx8 28-TSOP1 28-TSOP1-0813

    Untitled

    Abstract: No abstract text available
    Text: K6E0804C1E-C CMOS SRAM Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating). Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Aug. 1. 1998 Preliminary Rev. 1.0 Release to Final Data Sheet. Nov. 2. 1998 Final Draft Data


    Original     		PDF K6E0804C1E-C 64Kx4 K6E0804C1E- 28-SOJ-300

    300b tube

    Abstract: 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64
    Text: Samsung Proprietary [ Shipping Quantity Information ] As of 2004-03-02 Divide DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM DRAM


    Original     		PDF FBGA-11 24-SOJ-300 -SOJ-300 -TSOP2-300AF -SOJ-300B 28-SOJ-300 28-SOJ-300A 28-SOJ-400 300b tube 90-FBGA-11 165-FBGA-1517 48-TSOP1-1220F 44-TSOP2-400BF-Lead-Free SAMSUNG MCP dram 0X13 SAMSUNG MCP 153 tray bga 64

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    CMOS ASYNCHRONOUS FIFO 32 PIN

    Abstract: LH540202 32-PIN
    Text: LH540202 CMOS 1024 x 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns The LH540202 is a FIFO First-In, First-Out memory device, based on fully-static CMOS dual-port SRAM technology, capable of storing up to 1024 nine-bit words. It


    Original     		PDF LH540202 LH540202 32PLCC 32-pin, 450-mil 28-pin, 300-mil DIP28-W-300) CMOS ASYNCHRONOUS FIFO 32 PIN 32-PIN

    LH540203

    Abstract: LH5498 32-PIN
    Text: LH540203 CMOS 2048 x 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns The LH540203 is a FIFO First-In, First-Out memory device, based on fully-static CMOS dual-port SRAM technology, capable of storing up to 2048 nine-bit words. It


    Original     		PDF LH540203 LH540203 32PLCC 32-pin, 450-mil 28-pin, 300-mil DIP28-W-300) LH5498 32-PIN

    KM68V257C

    Abstract: KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CTG
    Text: PRELIMINARY CMOS SRAM KM68V257C Document Title 32Kx8 Bit High Speed Static RAM 3.3V Operating , Evolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Jun. 1st, 1994 Preliminary


    Original     		PDF KM68V257C 32Kx8 28-TSOP1 28-TSOP1-0813 KM68V257C KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CTG

    LH52258A

    Abstract: SOJ8
    Text: LH52258A FEATURES • Fast Access Times: 20/25 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ FUNCTIONAL DESCRIPTION


    Original     		PDF LH52258A 28-Pin, 300-mil LH52258A 28SOJ300 SOJ8

    K6E0804C1C-C

    Abstract: SRAM sheet samsung
    Text: PRELIMINARY CMOS SRAM K6E0804C1C-C Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994 Preliminary Rev. 1.0 Release to final Data Sheet.


    Original     		PDF K6E0804C1C-C 64Kx4 12/15/20ns 9/10/13ns 10/12/13ns 6/8/10ns 7/9/10ns 28-SOJ-300 K6E0804C1C-C SRAM sheet samsung

    KM68257CJ

    Abstract: KM68257C KM68257C-12 KM68257C-15 KM68257C-20
    Text: PRELIMINARY KM68257C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Operated at Commercial Temperature Range. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. Apr. 1st, 1994 Preliminary


    Original     		PDF KM68257C 32Kx8 12/15/20ns 8/10ns 8/10/10ns 28-TSOP1-0813 KM68257CJ KM68257C KM68257C-12 KM68257C-15 KM68257C-20

    32-PIN

    Abstract: LH540204 LH5499
    Text: LH540204 CMOS 4096 x 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 20/25/35/50 ns The LH540204 is a FIFO First-In, First-Out memory device, based on fully-static CMOS dual-port SRAM technology, capable of storing up to 4096 nine-bit words. It


    Original     		PDF LH540204 LH540204 indepen447] 32PLCC 32-pin, 450-mil 28-pin, 300-mil 32-PIN LH5499

    32-PIN

    Abstract: LH540203 LH5498
    Text: LH540203 CMOS 2048 x 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns The LH540203 is a FIFO First-In, First-Out memory device, based on fully-static CMOS dual-port SRAM technology, capable of storing up to 2048 nine-bit words. It


    Original     		PDF LH540203 LH540203 32PLCC 32-pin, 450-mil 28-pin, 300-mil DIP28-W-300) 32-PIN LH5498

    KM6865BP-20

    Abstract: KM6865BP-15
    Text: KM6865B CMOS SRAM 8 K x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 12 ,15, 20,25ns Max. The KM865B is a 65,536-bit high-speed Static Random • Low Power D issipation Access Memory organized as 8,192 words by 8 bits.


    OCR Scan     		PDF KM6865B KM865B 536-bit KM6865B-12 KM6865B-15 KM6865B-25 KM6865BP-20 KM6865BP-15

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM64258E CMOS SRAM Document Tills 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial draft Draft Data Aug. 1 .1 9 9 8 Remark Preliminary The attached data sheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right


    OCR Scan     		PDF KM64258E 64Kx4 28-SOJ-300

    Untitled

    Abstract: No abstract text available
    Text: KM68257C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 5V Operating , Evolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History Draft Data Remark Rev. 0.0 Initial re le a s e w ith P re lim in a ry. A pr. 1st, 1994


    OCR Scan     		PDF KM68257C 32Kx8 28-SOJ-300 28-TSOP1-0813

    Untitled

    Abstract: No abstract text available
    Text: KM68257E, KM68257EI PRELIMINARY CMOS SRAM Document Title 32Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev.No. History Rev. 0.0 Initial D raft Draft Data A ug. 1 .1 9 9 8 Remark


    OCR Scan     		PDF KM68257E, KM68257EI 32Kx8 28-SOJ-300 28-TSOP1

    Untitled

    Abstract: No abstract text available
    Text: KM68257E, KM68257EI PRELIMINARY CMOS SRAM Document Title 32Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Ranges. Revision History Rev.No. History Rev. 0.0 Initial Draft Draft Data Aug. 1 .1 9 9 8 Remark


    OCR Scan     		PDF KM68257E, KM68257EI 32Kx8 28-SOJ-300 28-TSOP1-0813

    Untitled

    Abstract: No abstract text available
    Text: KM68V257E/EL, KM68V257EI/ELI CMOS SRAM Document Title 32Kx8 Bit High-Speed CMOS Static RAM 3.3V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Aug. 1. 1998 Preliminary Rev. 1.0


    OCR Scan     		PDF KM68V257E/EL, KM68V257EI/ELI 32Kx8 28-SOJ-300 28-TSOP1

    Untitled

    Abstract: No abstract text available
    Text: KM64B261A BiCMOS SRAM 64Kx4 Bit With OE High speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns (Max.) • Low Power Dissipation Standby (TTL) : 90 mA (Max.) (CMOS) : 20 mA (Max.) Operating Current: 160 mA (f=100MHz) • Single 5V±5% Power Supply


    OCR Scan     		PDF KM64B261A 64Kx4 100MHz) KM64B261AJ 28-SOJ-300 KM64B261A 144-bit 7Tb414a

    Untitled

    Abstract: No abstract text available
    Text: KM68V257C CMOS SRAM Document Title 32Kx8 Bit High Speed Static RAM 3.3V Operating , Evolutionary Pin out. Operated at Commercial Temperature Range. Revision History RevNo. History R ev. 0.0 Initial re le a s e w ith P relim in ary. Jun. 1st, 1994 P re lim in a ry


    OCR Scan     		PDF KM68V257C 32Kx8 28-TS 28-SOJ-300 28-TSOP1-0813

    Untitled

    Abstract: No abstract text available
    Text: KM64B258A BiCMOS SRAM 65,536 WORD x 4 Bit With OE High-Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 8 , 1 0 ,12ns (max.) • Low Power Dissipation Standby (TTL) : 110mA (max.) (CMOS): 20mA (max.) Operating KM64B258AJ-8: 185mA (max.)


    OCR Scan     		PDF KM64B258A 110mA KM64B258AJ-8: 185mA KM64B258AJ-10: 175mA KM64B258AJ-12: 165mA KM64B258AJ: 28-SOJ-300

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM64258E CMOS SRAM Document Title 64Kx4 Bit with OE High Speed Static RAM(5V Operating), Evolutionary Pin out. Revision History RevNo. History Rev. 0.0 Initial draft Draft Data Aug. 1. 1998 Remark Preliminary The attached data sheets are prepared and approved by SAM SUNG Electronics. SAM SUNG Electronics CO., LTD. reserve the right


    OCR Scan     		PDF KM64258E 64Kx4 28-SOJ-300