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    LH52258 Search Results

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    LH52258 Price and Stock

    Sharp Microelectronics of the Americas LH52258AK-20

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    Bristol Electronics LH52258AK-20 438
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    LH52258AK-20 131
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    Quest Components LH52258AK-20 1,256
    • 1 $6.3
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    • 100 $6.3
    • 1000 $3.15
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    LH52258AK-20 741
    • 1 $6.3
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    • 100 $2.73
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    LH52258AK-20 236
    • 1 $6.288
    • 10 $6.288
    • 100 $3.8776
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    Sharp Microelectronics of the Americas LH52258AK-25

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    Bristol Electronics LH52258AK-25 84 1
    • 1 $10.08
    • 10 $5.04
    • 100 $4.3677
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    Quest Components LH52258AK-25 8
    • 1 $13.5
    • 10 $6.75
    • 100 $6.75
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    Sharp Microelectronics of the Americas LH52258AD-20

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    Bristol Electronics LH52258AD-20 17
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    Quest Components LH52258AD-20 4
    • 1 $15
    • 10 $11
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    Sharp Microelectronics of the Americas LH52258D-45

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    Quest Components LH52258D-45 424
    • 1 $30
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    • 100 $24
    • 1000 $23.25
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    Sharp Microelectronics of the Americas LH52258K-35

    Static RAM, 32Kx8, 28 Pin, Plastic, SOJ
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    Quest Components LH52258K-35 4
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    Find more LH52258 price and stock on Findchips.com

    LH52258 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    LH52258-20 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH52258-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH52258A Sharp CMOS 32K x 8 Static RAM Original PDF
    LH52258AD-20 Sharp CMOS 32K x 8 static RAM Original PDF
    LH52258AD-25 Sharp CMOS 32K x 8 static RAM Original PDF
    LH52258AK-20 Sharp CMOS 32K x 8 static RAM Original PDF
    LH52258AK-25 Sharp CMOS 32K x 8 static RAM Original PDF
    LH52258D-25 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH52258D-35 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    LH52258D-45 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF

    LH52258 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LH52258A

    Abstract: SOJ8
    Text: LH52258A FEATURES • Fast Access Times: 20/25 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ FUNCTIONAL DESCRIPTION


    Original     		PDF LH52258A 28-Pin, 300-mil LH52258A 28SOJ300 SOJ8

    soj28p300

    Abstract: LH52258A
    Text: LH52258A FEATURES • Fast Access Times: 20/25 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ FUNCTIONAL DESCRIPTION


    Original     		PDF LH52258A 28-Pin, 300-mil LH52258A 28SOJ300 soj28p300

    km681001j-20

    Abstract: TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20
    Text: Cross Reference Guide Cross Reference Guide ALLIANCE VS PARADIGM AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ AS7C1028-15TJ AS7C1028-20TJ AS7C1028L-10TJ AS7C1028L-12TJ


    Original     		PDF AS7C1024-10TJ AS7C1024-12TJ AS7C1024-15TJ AS7C1024-20TJ AS7C1024L-10TJ AS7C1024L-12TJ AS7C1024L-15TJ AS7C1024L-20TJ AS7C1028-10TJ AS7C1028-12TJ km681001j-20 TC55B328J-12 256Kx4 TC55B465J10 TC55B8128J20 PDM41028SA-15SO TC55B8128J-12 TC55328J-20 KM681001J-25 PDM41024S20

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256

    3114 sram

    Abstract: No abstract text available
    Text: SHARP CORP S1E D • AlflOTTA 0Q0bc!2A 70S B S R P J T -H 6 -Z 3 -I? PRELIMINARY LH52258B CMOS 32K x 8 Static RAM FEATURES FUNCTIONAL DESCRIPTION The LH52258B is a high speed 262,144 bit static RAM organized as 32K x 8. A fast, efficient design is obtained


    OCR Scan     		PDF LH52258B 28-Pin, 300-mil 52258B-t 000b23S T-46-23-13 3114 sram

    Untitled

    Abstract: No abstract text available
    Text: LH52258A CMOS 32K x 8 Static RAM When E is LOW and W is HIGH, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs. Since the device is fully static in operation, new Read cycles can be


    OCR Scan     		PDF 28-Pin, 300-mil LH52258A 28soj300

    Untitled

    Abstract: No abstract text available
    Text: LH52258A FEATURES • Fast Access Times: 20/25 ns • Low Power Standby when Deselected • TTL Compatible I/O • 5 V± 10% Supply • Fully Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ CMOS 32K x 8 Static RAM


    OCR Scan     		PDF LH52258A 28-Pin, 300-mil LH52258A 28-Din, DIP28-P-300)

    lh52258

    Abstract: No abstract text available
    Text: LH52258 / FEATURES CMOS 32K x 8 Static RAM When E is LOW and W is HIGH, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs. Since the device is fully static in operation, new Read cycles can be performed by simply changing the address.


    OCR Scan     		PDF LH52258 28-Pin, 300-mil LH52258 DIP28-P-300)

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY LH52258B CMOS 32K x 8 Static RAM FUNCTIONAL DESCRIPTION FEATURES The LH52258B is a high speed 262,144 bit static RAM organized as 32K x 8. A fast, efficient design is obtained with a CMOS periphery and a matrix constructed with polysilicon load memory cells.


    OCR Scan     		PDF LH52258B 28-Pin, 300-mil LH52258B

    MB84256-15LL

    Abstract: M5M5256AP-70L M5M5256P-12 MB84256 mb84256-12ll HP121 M5M5256AP-70 M5M5256P M5M5256P-15 MB84256-10L
    Text: 2 5 6 K £ tt £ ÌA&K& rc CMOS X A TAAC max ns) TCAC max (ns) TOE nax (ns) S t a t i c ^ y '/ TOH Bin (ns) TOD nax (ns) T»P «in (ns) RAM (3 2 7 6 8 x8 ) ft '•» TDS nin (ns) ffi TDH (ns) TWD ■in (ns) TWR nax (ns) LH52258-25 SHARP 0—70 25 25


    OCR Scan     		PDF 32768x8) 28P1N IH52258-25 M5M5256AP-70 M5M5256AP-70L M5M5256AP-85 MB84256-10L HB84256-10LL MB84256-12 MB84256-12L MB84256-15LL M5M5256P-12 MB84256 mb84256-12ll HP121 M5M5256P M5M5256P-15

    52258

    Abstract: No abstract text available
    Text: SHARP CORP S1E D m 61607=16 Q00b515 3MÔ «S R P J LH52258 FEATURES • Fast Access Times: 35/45/55 ns • Low Power Standby When Deselected • TTL Compatible I/O • 5 V± 10% Supply • Fully Static Operation • 2 V Data Retention • Packages: 28-Pin, 300-mil DIP


    OCR Scan     		PDF LH52258 28-Pin, 300-mil T-46-23-13 28-pin 52258

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY LH52258A FEATURES CMOS 32K X 8 Static RAM When E is LOW and W is HIGH, a static Read will occur at the memory location specified by the address lines. G must be brought LOW to enable the outputs. Since the device is fully static in operation, new Read


    OCR Scan     		PDF LH52258A 28-Pin, 300-mil DIP28-P-300)

    LH522

    Abstract: No abstract text available
    Text: LH52258A FEATURES • Fast Access Times: 20/25 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ FUNCTIONAL DESCRIPTION


    OCR Scan     		PDF LH52258A 28-Pin, 300-mil LH52258A LH522

    Untitled

    Abstract: No abstract text available
    Text: LH52258A FEATURES • Fast Access Times: 20/25 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V ± 10% Supply • Fully-Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ FUNCTIONAL DESCRIPTION


    OCR Scan     		PDF LH52258A 28-Pin, 300-mil LH52258A 300-mii

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


    OCR Scan     		PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES * S tic RAMs Process C apacity Configuration Model No. A ccess tim e ns 70 80 90 100 120 LH5116 16k Full CMOS 64k 2k X 8 8k X 8 LH5116H f- Supply voltage : 5 V * 10% QpewBng tew ^raw » : ~ 40to85'C LH5116S j- Supply voltage : 3 V ± 10% LH5164A


    OCR Scan     		PDF LH5116 LH5116H LH5116S LH5164A LH5164AH 40to85 LH5164AV LH51V256H LH5268A LH52256A

    BNK-17

    Abstract: No abstract text available
    Text: MEMORIES ★Under development • S ta tic RA M s Process Capacity Configuration words X bits Modal No. 2k X 8 Full CMOS 64k 8k X 8 256k 32k X 8 64k 8k X 8 64k X 4 256k 32k X 8 64k X 8 CMOS periphery 100 40/0.001 5 ± 10% O to 70 100 40/0.001 5 ± 10% - 4 0 to 85


    OCR Scan     		PDF LH5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN 24SOP 28SOJ 400mil) LH521002BK/BNK-17/L LH521002BK/BNK-20/L LH521002BK/BNK-2S/L LH521007AK-20 BNK-17

    5Z25

    Abstract: No abstract text available
    Text: CMOS 32K x 8 Static RAM FEATURES • Fast Access Times: 20/25 ns • Low-Power Standby when Deselected • TTL Compatible I/O • 5 V + 10% Supply • Fully-Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ FUNCTIONAL DESCRIPTION


    OCR Scan     		PDF 28-Pin, 300-mil LH52258A 28DIP-1 LH52258A 5Z25

    LH5160N

    Abstract: LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55
    Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Features Functional Description The IH 5911, LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.


    OCR Scan     		PDF LH5912 LH5914are LH5911 LH5914 /IDT7134 16Kx18 64Kx18 LH5160N LH5115 LH5118D LH5160 LH5160D LH521000 LH5167 LH52252A LH5114H LH5911-55

    organizational structure samsung

    Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
    Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116


    OCR Scan     		PDF LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256

    LH5911

    Abstract: lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl
    Text: NOV 0 5 1990 L H 5 9 1 1 /L H 5 9 1 2 /L H 5 9 1 4 2K x 8 CMOS Dual Port RAM Preliminary Data Sheet Functional Description Features The LH5911. LH5912 and LH5914are dual port static RAMs that use true dual port memory cells to allow each port to independently access any location in memory.


    OCR Scan     		PDF LH5911 /LH5912/LH5914 LH5911. LH5912 LH5914are LH5914 16Kx18 LH52270 lh5167-55 LH5101 LH52250 LH5160D LH5167 LH52252 LH5114H lh5160n 4kx8 static ram ttl

    lh5168

    Abstract: No abstract text available
    Text: MEMORIES Static RAMs ★ Under development P ro ce ss C a p a c ity C o n fig u ra tio n Model No. A c c e s s tim e n s 70 80 90 100 120 LH5116 2k X 8 16k LH51116H Operating temperature : - 40 to 8 5 t IUUU "O LH5116S Supply voltage : 3 V±10% LH5168 Full


    OCR Scan     		PDF LH5116 LH51116H LH5116S LH5168 LH5168H LH5168V LH5168S LH5168SH LH5164AH 5164AV

    5268A

    Abstract: 28-SOP LH521002AK-2S 28SOP LH52256CVN
    Text: MEMORIES S tatic RAMs Process Capacity Configuation words Xbits 2k 16k 8 X Access time Supply current ns) MAX. Cycle time Operating, Standby (ns) MIN. !mA) MAX. (mA) MAX. Model No. Supply Operating voltage temp. 0C) m i i LH 5116/NA/D-10 100 40 0.001 5 ± 10%


    OCR Scan     		PDF 5116/NA/D-10 LH5116H/HN/HD-10 LH5116SN LH5164A/AN-80L LH5164A /AT-10L 24DIP/24SOP/24SK-DIP 24SOP 28SOP/ 5268A 28-SOP LH521002AK-2S 28SOP LH52256CVN