FD059H06A5B
Abstract: 31-2 MIL-HDBK-263 S1025
Text: I - 0512J rev. A FD059H06A5B FRED Die in Wafer Form z z 600V VF = 1.45V max. 5" Wafer 100% Tested at Probe c Available in Tape and Reel (upon request), Chip Pack, and Sawn on Film d Electrical Characteristics Parameter VFM VRRM IRM trr Description Maximum Forward Voltage
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0512J
FD059H06A5B
12-Mar-07
FD059H06A5B
31-2
MIL-HDBK-263
S1025
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C-150
Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 FD059H06A5
Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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4607A
IRGB4B60KD1
IRGS4B60KD1
IRGSL4B60KD1
O-220
IRGB4B60KD1
O-262
AN-994.
C-150
IRF1010
IRF530S
IRGS4B60KD1
IRGSL4B60KD1
FD059H06A5
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Untitled
Abstract: No abstract text available
Text: PD - 94607B INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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94607B
IRGB4B60KD1
IRGS4B60KD1
IRGSL4B60KD1
O-220
IRGB4B60KD1
O-262
AN-994.
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SL4B
Abstract: FD059
Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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5643A
IRGB4B60KPbF
IRGS4B60KPbF
IRGSL4B60KPbF
O-220
IRGB4B60KPbF
O-262
AN-994.
SL4B
FD059
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Untitled
Abstract: No abstract text available
Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.
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5616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
IRGSL4B60KD1PbF
O-220
IRGB4B60KD1
IRGS4B60KD1
O-262
IRGSL4B60KD1
AN-994.
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igbt 500V 22A
Abstract: C-150 IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 diode 6-7 SL4B
Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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4607A
IRGB4B60KD1
IRGS4B60KD1
IRGSL4B60KD1
O-220
IRGB4B60KD1
O-262
AN-994.
igbt 500V 22A
C-150
IRF1010
IRF530S
IRGS4B60KD1
IRGSL4B60KD1
diode 6-7
SL4B
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AN-994
Abstract: C-150 IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.
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5616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
IRGSL4B60KD1PbF
O-220
IRGB4B60KD1
IRGS4B60KD1
O-262
IRGSL4B60KD1
AN-994.
AN-994
C-150
IRGS4B60KD1
IRGSL4B60KD1
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Untitled
Abstract: No abstract text available
Text: PD - 95616A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1PbF IRGSL4B60KD1PbF C VCES = 600V Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA.
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5616A
IRGB4B60KD1PbF
IRGS4B60KD1PbF
IRGSL4B60KD1PbF
O-220
IRGB4B60KD1
IRGS4B60KD1
O-262
IRGSL4B60KD1
AN-994.
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Untitled
Abstract: No abstract text available
Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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5643A
IRGB4B60KPbF
IRGS4B60KPbF
IRGSL4B60KPbF
O-220
O-262
IRGS4B60KPbF
AN-994.
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Untitled
Abstract: No abstract text available
Text: PD - 94633 IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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IRGB4B60K
IRGS4B60K
IRGSL4B60K
O-220
IRGB4B60K
IRGS4B60K
O-262
AN-994.
FD059H06A5.
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C-150
Abstract: IRGS4B60K IRGSL4B60K
Text: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.
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IRGB4B60KPbF
IRGS4B60K
IRGSL4B60K
O-220
O-220
IRGB4B60KPbF
O-262
AN-994.
C-150
IRGS4B60K
IRGSL4B60K
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C-150
Abstract: IRF1010 IRF530S IRGB4B60K IRGS4B60K IRGSL4B60K
Text: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.
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4633A
IRGB4B60K
IRGS4B60K
IRGSL4B60K
O-220
O-262
AN-994.
C-150
IRF1010
IRF530S
IRGB4B60K
IRGS4B60K
IRGSL4B60K
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Untitled
Abstract: No abstract text available
Text: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.
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IRGB4B60KPbF
IRGS4B60K
IRGSL4B60K
O-220
O-220
IRGB4B60KPbF
O-262
AN-994.
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Untitled
Abstract: No abstract text available
Text: PD - 94607A INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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Original
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PDF
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4607A
IRGB4B60KD1
IRGS4B60KD1
IRGSL4B60KD1
O-220
IRGB4B60KD1
O-262
AN-994.
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C-150
Abstract: IRGS4B60K IRGSL4B60K
Text: PD - 95643 IRGB4B60KPbF IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.
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IRGB4B60KPbF
IRGS4B60K
IRGSL4B60K
O-220
O-220
IRGB4B60KPbF
O-262
AN-994.
C-150
IRGS4B60K
IRGSL4B60K
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C-150
Abstract: IRF1010 IRF530S IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1
Text: PD - 94607 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1 IRGS4B60KD1 IRGSL4B60KD1 C VCES = 600V Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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Original
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IRGB4B60KD1
IRGS4B60KD1
IRGSL4B60KD1
O-220
IRGB4B60KD1
O-262
AN-994.
FD059H06A5.
C-150
IRF1010
IRF530S
IRGS4B60KD1
IRGSL4B60KD1
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Untitled
Abstract: No abstract text available
Text: PD - 94633A IRGB4B60K IRGS4B60K IRGSL4B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. Maximum Junction Temperature rated at 175°C.
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4633A
IRGB4B60K
IRGS4B60K
IRGSL4B60K
O-220
O-262
AN-994.
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AN-994
Abstract: C-150 IRGS4B60KD1 IRGSL4B60KD1
Text: PD - 95616 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE IRGB4B60KD1PbF IRGS4B60KD1 IRGSL4B60KD1 C Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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IRGB4B60KD1PbF
IRGS4B60KD1
IRGSL4B60KD1
O-220
O-220
IRGB4B60KD1PbF
O-262
AN-994.
AN-994
C-150
IRGS4B60KD1
IRGSL4B60KD1
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AN-994
Abstract: C-150 igbt 400V 40A
Text: PD - 95643A IRGB4B60KPbF IRGS4B60KPbF IRGSL4B60KPbF INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • • Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient.
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Original
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5643A
IRGB4B60KPbF
IRGS4B60KPbF
IRGSL4B60KPbF
O-220
O-262
IRGS4B60KPbF
AN-994.
AN-994
C-150
igbt 400V 40A
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