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    Vishay Siliconix SIZ728DT-T1-GE3

    MOSFET 2N-CH 25V 16A 6POWERPAIR
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    DigiKey SIZ728DT-T1-GE3 Reel
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    Vishay Intertechnologies SIZ728DT-T1-GE3

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    Bristol Electronics SIZ728DT-T1-GE3 1,749
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    Vishay Intertechnologies SIZ728DTT1GE3

    N-CHANNEL 25 V (D-S) MOSFET Power Field-Effect Transistor, 16A I(D), 25V, 0.0077ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    ComSIT USA SIZ728DTT1GE3 2,498
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    SIZ728DT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIZ728DT-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 25V 16A 6-POWERPAIR Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)


    Original     		PDF SiZ728DT 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiZ728DT www.vishay.com Vishay Siliconix Dual N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiZ728DT 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)


    Original     		PDF SiZ728DT 2002/95/EC SiZ728DT-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)


    Original     		PDF SiZ728DT 2002/95/EC SiZ728DT-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    mosfet 0608

    Abstract: No abstract text available
    Text: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) (Ω) ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a • Halogen-free According to IEC 61249-2-21


    Original     		PDF SiZ728DT 2002/95/EC 11-Mar-11 mosfet 0608

    Untitled

    Abstract: No abstract text available
    Text: SiZ728DT_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiZ728DT AN609, 27-Apr-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiZ728DT Vishay Siliconix N-Channel 25 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 25 Channel-2 25 RDS(on) () ID (A) 0.0077 at VGS = 10 V 16a 0.0110 at VGS = 4.5 V 16a 0.0035 at VGS = 10 V 35a 0.0048 at VGS = 4.5 V 35a Qg (Typ.)


    Original     		PDF SiZ728DT 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. P owerPAIR MOSFET s PowerPAIR 3 x 3 Provides Best Efficiency in the Industry in Compatible 3 x 3 Footprints PowerPAIR 6 x 3.7 26 % Smaller with Comparable Performance to a 6 x 5 mm2 Device PowerPAIR 6 x 5 Achieves High Efficiency in


    Original     		PDF SiZ340DT SiZ342DT VMN-MS6927-1406

    sir158

    Abstract: q113 SiZ340DT SiR158DP N3X3
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - High- and Low-Side MOSFETs in One Compact Package AND TEC I INNOVAT O L OGY PowerPAIR N HN POWER MOSFETs O 19 62-2012 Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes KEY BENEFITS


    Original     		PDF SiZ790DT SiZ914DT VMN-PT0182-1209 sir158 q113 SiZ340DT SiR158DP N3X3

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - High- and Low-Side MOSFETs in One Compact Package PowerPAIR Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes Key Benefits APPLICATIONS • High- and low-side MOSFETs in one


    Original     		PDF SiZ790DT SiZ914DT VMN-PT0182-1402