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    SIS782DN Price and Stock

    Vishay Siliconix SIS782DN-T1-GE3

    MOSFET N-CH 30V 16A PPAK1212-8
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    DigiKey SIS782DN-T1-GE3 Reel 6,000 3,000
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    SIS782DN-T1-GE3 Cut Tape 2,739 1
    • 1 $0.61
    • 10 $0.532
    • 100 $0.3681
    • 1000 $0.26179
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    SIS782DN-T1-GE3 Digi-Reel 1
    • 1 $0.61
    • 10 $0.532
    • 100 $0.3681
    • 1000 $0.26179
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    Vishay Intertechnologies SIS782DN-T1-GE3

    N-CH 30-V (D-S) MOSFET W/SCHOTTKY - Tape and Reel (Alt: SIS782DN-T1-GE3)
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    Avnet Americas SIS782DN-T1-GE3 Reel 16 Weeks 3,000
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    Mouser Electronics SIS782DN-T1-GE3 2,821
    • 1 $0.61
    • 10 $0.532
    • 100 $0.369
    • 1000 $0.262
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    TTI SIS782DN-T1-GE3 Reel 147,000 3,000
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    EBV Elektronik SIS782DN-T1-GE3 17 Weeks 3,000
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    SIS782DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIS782DN-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 16A POWERPAK1212 Original PDF

    SIS782DN Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC


    Original     		PDF SiS782DN 2002/95/EC SiS782DN-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiS782DN www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiS782DN 11-Mar-11

    S11117

    Abstract: No abstract text available
    Text: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC


    Original     		PDF SiS782DN 2002/95/EC SiS782DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 S11117

    Untitled

    Abstract: No abstract text available
    Text: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC


    Original     		PDF SiS782DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS782DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiS782DN AN609, 0826m 3645m 0845m 6589m 7187m 4999m 4512m 8560u

    Untitled

    Abstract: No abstract text available
    Text: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC


    Original     		PDF SiS782DN 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS782DN Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)e RDS(on) () 30 0.0095 at VGS = 10 V 16 0.0120 at VGS = 4.5 V 16 Qg (Typ.) 9.5 nC PowerPAK 1212-8 S 3.30 mm APPLICATIONS 3.30 mm 1 S 2 • Notebook PC


    Original     		PDF SiS782DN 2002/95/EC SiS782DN-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - Save Space, Increase Performance SkyFET Integrated MOSFET and Schottky Diode Solution Key Benefits • • • • Increases efficiency for DC/DC converter applications Reduces space and solution cost by eliminating external Schottky diodes


    Original     		PDF SiS778DN SiS782DN SiS780DN SiZ914DT VMN-PT0104-1302

    si4776

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Save Space, Increase Performance AND TEC I INNOVAT O L OGY SkyFET N HN POWER MOSFETs O 19 62-2012 Integrated MOSFET and Schottky Diode Solution KEY BENEFITS • • • • Increases efficiency for DC/DC converter applications


    Original     		PDF SiR788DP Si7774DP Si7748DP Si7772DP Si4628DY Si4752DY Si4774DY Si4712DY Si4714DY Si4776DY si4776

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836