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    SI7772DP Price and Stock

    Vishay Siliconix SI7772DP-T1-GE3

    MOSFET N-CH 30V 35.6A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7772DP-T1-GE3 Reel 3,000 3,000
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    SI7772DP-T1-GE3 Cut Tape 2,880 1
    • 1 $0.78
    • 10 $0.673
    • 100 $0.4659
    • 1000 $0.33128
    • 10000 $0.33128
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    SI7772DP-T1-GE3 Digi-Reel 1
    • 1 $0.78
    • 10 $0.673
    • 100 $0.4659
    • 1000 $0.33128
    • 10000 $0.33128
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    New Advantage Corporation SI7772DP-T1-GE3 15,000 1
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    Vishay Intertechnologies SI7772DP-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET W/SCHOTTKY - Tape and Reel (Alt: SI7772DP-T1-GE3)
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    Avnet Americas SI7772DP-T1-GE3 Reel 16 Weeks 3,000
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    • 10000 $0.3403
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    Mouser Electronics SI7772DP-T1-GE3 5,950
    • 1 $0.63
    • 10 $0.552
    • 100 $0.4
    • 1000 $0.301
    • 10000 $0.258
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    Verical SI7772DP-T1-GE3 3,000 23
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    • 100 $0.2695
    • 1000 $0.2404
    • 10000 $0.2094
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    Arrow Electronics SI7772DP-T1-GE3 Cut Strips 3,000 16 Weeks 1
    • 1 $0.316
    • 10 $0.3028
    • 100 $0.2695
    • 1000 $0.2404
    • 10000 $0.2094
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    Newark SI7772DP-T1-GE3 Reel 3,000
    • 1 $0.361
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    • 100 $0.361
    • 1000 $0.361
    • 10000 $0.326
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    SI7772DP-T1-GE3 Cut Tape 3,000
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    • 1000 $0.39
    • 10000 $0.39
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    TTI SI7772DP-T1-GE3 Reel 36,000 3,000
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    South Electronics SI7772DP-T1-GE3
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    Vishay Intertechnologies SI7772DP-T1-GE3.

    Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:35.6A; On Resistance Rds(On):0.0105Ohm; Transistor Mounting:Surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V Rohs Compliant: Yes |Vishay SI7772DP-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI7772DP-T1-GE3. Reel 3,000
    • 1 $0.345
    • 10 $0.345
    • 100 $0.345
    • 1000 $0.345
    • 10000 $0.336
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    SI7772DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI7772DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 35.6A 8-SOIC Original PDF

    SI7772DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si7772DP

    Abstract: si7772 SI7772DP-T1-GE3
    Text: New Product Si7772DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.013 at VGS = 10 V 35.6a 0.0165 at VGS = 4.5 V 31.6 Qg (Typ.) 8.3 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7772DP 2002/95/EC Si7772DP-T1-GE3 18-Jul-08 si7772

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7772DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.013 at VGS = 10 V 35.6a 0.0165 at VGS = 4.5 V 31.6 Qg (Typ.) 8.3 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7772DP 2002/95/EC Si7772DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    s1084

    Abstract: No abstract text available
    Text: New Product Si7772DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.013 at VGS = 10 V 35.6a 0.0165 at VGS = 4.5 V 31.6 Qg (Typ.) 8.3 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7772DP 2002/95/EC Si7772DP-T1-GE3 11-Mar-11 s1084

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7772DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.013 at VGS = 10 V 35.6a 0.0165 at VGS = 4.5 V 31.6 Qg (Typ.) 8.3 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7772DP 2002/95/EC Si7772DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    4612 mosfet

    Abstract: AN609 292279
    Text: Si7772DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si7772DP AN609, 30-Jul-09 4612 mosfet AN609 292279

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7772DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.013 at VGS = 10 V 35.6a 0.0165 at VGS = 4.5 V 31.6 Qg (Typ.) 8.3 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7772DP 2002/95/EC Si7772DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7772DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.013 at VGS = 10 V 35.6a 0.0165 at VGS = 4.5 V 31.6 Qg (Typ.) 8.3 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7772DP 2002/95/EC Si7772DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - Save Space, Increase Performance SkyFET Integrated MOSFET and Schottky Diode Solution Key Benefits • • • • Increases efficiency for DC/DC converter applications Reduces space and solution cost by eliminating external Schottky diodes


    Original     		PDF SiS778DN SiS782DN SiS780DN SiZ914DT VMN-PT0104-1302

    si4776

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Save Space, Increase Performance AND TEC I INNOVAT O L OGY SkyFET N HN POWER MOSFETs O 19 62-2012 Integrated MOSFET and Schottky Diode Solution KEY BENEFITS • • • • Increases efficiency for DC/DC converter applications


    Original     		PDF SiR788DP Si7774DP Si7748DP Si7772DP Si4628DY Si4752DY Si4774DY Si4712DY Si4714DY Si4776DY si4776

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477