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    SIRA12DP Price and Stock

    Vishay Siliconix SIRA12DP-T1-GE3

    MOSFET N-CH 30V 25A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIRA12DP-T1-GE3 Digi-Reel 5,382 1
    • 1 $0.62
    • 10 $0.549
    • 100 $0.62
    • 1000 $0.36052
    • 10000 $0.36052
    		Buy Now
    SIRA12DP-T1-GE3 Cut Tape 5,382 1
    • 1 $0.62
    • 10 $0.549
    • 100 $0.62
    • 1000 $0.36052
    • 10000 $0.36052
    		Buy Now
    SIRA12DP-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.33509
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    RS SIRA12DP-T1-GE3 Bulk 3,000
    • 1 -
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    • 10000 $0.62
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    Chip 1 Exchange SIRA12DP-T1-GE3 19,007
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    Vishay Intertechnologies SIRA12DP-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SIRA12DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIRA12DP-T1-GE3 Reel 20 Weeks 3,000
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.29828
    		Buy Now
    Mouser Electronics SIRA12DP-T1-GE3 18,086
    • 1 $0.49
    • 10 $0.49
    • 100 $0.379
    • 1000 $0.309
    • 10000 $0.303
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    Verical SIRA12DP-T1-GE3 3,000 19
    • 1 -
    • 10 -
    • 100 $0.2519
    • 1000 $0.2399
    • 10000 $0.2359
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    SIRA12DP-T1-GE3 3,000 96
    • 1 -
    • 10 -
    • 100 $0.3263
    • 1000 $0.3238
    • 10000 $0.3238
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    Arrow Electronics SIRA12DP-T1-GE3 Cut Strips 3,000 20 Weeks 1
    • 1 $0.2639
    • 10 $0.2599
    • 100 $0.2519
    • 1000 $0.2399
    • 10000 $0.2359
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    Newark SIRA12DP-T1-GE3 Reel 3,000
    • 1 $0.428
    • 10 $0.428
    • 100 $0.428
    • 1000 $0.428
    • 10000 $0.387
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    SIRA12DP-T1-GE3 Cut Tape 3,000
    • 1 -
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    • 100 -
    • 1000 $0.471
    • 10000 $0.471
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    TTI SIRA12DP-T1-GE3 Reel 6,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.304
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    TME SIRA12DP-T1-GE3 1
    • 1 $0.808
    • 10 $0.653
    • 100 $0.52
    • 1000 $0.466
    • 10000 $0.466
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    Avnet Asia SIRA12DP-T1-GE3 24 Weeks 3,000
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    Chip1Stop SIRA12DP-T1-GE3 Cut Tape 3,000
    • 1 $0.264
    • 10 $0.263
    • 100 $0.261
    • 1000 $0.259
    • 10000 $0.259
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    EBV Elektronik SIRA12DP-T1-GE3 21 Weeks 3,000
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    SIRA12DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIRA12DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 25A SO8 PWR PK Original PDF

    SIRA12DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PowerPAK

    Abstract: No abstract text available
    Text: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		PDF SiRA12DP 2002/95/EC SiRA12DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PowerPAK

    SIRA12DP

    Abstract: diode gen 52
    Text: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		PDF SiRA12DP 2002/95/EC SiRA12DP-T1-GE3 11-Mar-11 diode gen 52

    Untitled

    Abstract: No abstract text available
    Text: SiRA12DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiRA12DP AN609, 8311m 8084u 3363m 3513m 3988m 5780m 3699m 13-Jan-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		PDF SiRA12DP 2002/95/EC SiRA12DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sira

    Abstract: No abstract text available
    Text: SPICE Device Model SiRA12DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiRA12DP 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sira

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiRA12DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiRA12DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		PDF SiRA12DP 2002/95/EC SiRA12DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		PDF SiRA12DP 2002/95/EC SiRA12DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    8025G

    Abstract: No abstract text available
    Text: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		PDF SiRA12DP 2002/95/EC SiRA12DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 8025G

    Untitled

    Abstract: No abstract text available
    Text: New Product SiRA12DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0043 at VGS = 10 V 25 0.0060 at VGS = 4.5 V 25 Qg (Typ.) 13.6 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8


    Original     		PDF SiRA12DP 2002/95/EC SiRA12DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:


    Original     		PDF SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402

    PowerPAK 1212-8

    Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
    Text: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications


    Original     		PDF VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    POWERPAK SO8

    Abstract: SIS32
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V


    Original     		PDF SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32