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Vishay Intertechnologies SIS412DN-T1-GE3MOSFETs 30V Vds 20V Vgs PowerPAK 1212-8 |
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SIS412DN-T1-GE3 | Reel | 78,000 | 3,000 |
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Vishay Intertechnologies SIR182DP-T1-RE3MOSFETs 60V Vds 20V Vgs PowerPAK SO-8 |
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SIR182DP-T1-RE3 | Reel | 48,000 | 3,000 |
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Vishay Intertechnologies SI7469DP-T1-GE3MOSFETs -80V Vds 20V Vgs PowerPAK SO-8 |
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SI7469DP-T1-GE3 | Reel | 42,000 | 3,000 |
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Vishay Intertechnologies SI7461DP-T1-E3MOSFETs -60V Vds 20V Vgs PowerPAK SO-8 |
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SI7461DP-T1-E3 | Reel | 36,000 | 3,000 |
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Vishay Intertechnologies SI7288DP-T1-GE3MOSFETs 40V Vds 20V Vgs PowerPAK SO-8 |
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SI7288DP-T1-GE3 | Reel | 33,000 | 3,000 |
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POWERPAK Datasheets Context Search
Catalog Datasheet |
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Contextual Info: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC |
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Si7456DP Si7456DP-T1-E3 Si7456DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive |
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Si7846DP Si7846DP-T1-E3 Si7846DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SI7456DDP-T1-GE3
Abstract: 2285b
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Si7456DDP Si7456DDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 2285b | |
MAR 826Contextual Info: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC |
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SQ7415AEN IEC61249-2-21 AEC-Q101 2002/95/EC SQ7415AEN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MAR 826 | |
Contextual Info: New Product SiRA00DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () (Max.) ID (A)a, g 0.00100 at VGS = 10 V 60 0.00135 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 66 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS • Synchronous Rectification |
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SiRA00DP 2002/95/EC SiRA00DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SiR698DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) Max. 100 0.195 at VGS = 10 V 7.5 0.230 at VGS = 6 V 6.9 Qg (Typ.) 5.2 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET |
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SiR698DP 2002/95/EC SiR698DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SQJ960EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) () at VGS = 10 V 0.036 RDS(on) () at VGS = 4.5 V 0.046 ID (A) per leg 8 Configuration Dual PowerPAK |
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SQJ960EP AEC-Q101 SQJ960EP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SiA929DJContextual Info: New Product SiA929DJ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.064 at VGS = - 10 V - 4.5a 0.078 at VGS = - 4.5 V - 4.5a 0.120 at VGS = - 2.5 V - 4.5a Qg (Typ.) 6.6 nC PowerPAK SC-70-6 Dual |
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SiA929DJ SC-70-6 SC-70 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • Fast Switching • AEC-Q101 Qualified |
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SQ7415EN AEC-Q101 2002/95/EC SQ7415EN-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SIR662Contextual Info: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 VDS (V) 60 Qg (Typ.) 30 nC PowerPAK SO-8 D S 6.15 mm S 2 S 3 G 4 G D 8 D 7 D 6 D 5 Bottom View |
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SiR662DP 2002/95/EC SiR662DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIR662 | |
SIA456DJContextual Info: New Product SiA456DJ Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 1.38 at VGS = 4.5 V 2.6 1.50 at VGS = 2.5 V 2.5 3.50 at VGS = 1.8 V 0.5 VDS (V) 200 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® |
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SiA456DJ SC-70 SC-70-6L-Single SiA456DJ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
TSOP8
Abstract: si7401
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Si7820DN 2002/95/EC Si7820DN-T1-E3 Si7820DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP8 si7401 | |
SiR826DPContextual Info: New Product SiR826DP Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0048 at VGS = 10 V 60 0.0052 at VGS = 7.5 V 60 0.0065 at VGS = 4.5 V 60 VDS (V) 80 Qg (Typ.) 27.9 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 |
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SiR826DP 2002/95/EC SiR826DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si7336ADP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) 0.0030 at VGS = 10 V 30 0.0040 at VGS = 4.5 V 27 VDS (V) 30 Qg (Typ.) 36 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Low-Side DC/DC Conversion - Notebook - Server |
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Si7336ADP Si7336ADP-T1-E3 Si7336ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.195 at VGS = 10 V 2.5 0.230 at VGS = 6 V 2.3 • Halogen-free Option Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® |
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Si7922DN Si7922DN-T1-E3 Si7922DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
Contextual Info: Si5476DU New Product Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.034 at VGS = 10 V 12 0.041 at VGS = 4.5 V 12 VDS (V) 60 Qg (Typ) 10 5 nC 10.5 PowerPAKr ChipFETr Single D TrenchFETr Power MOSFET D New Thermally Enhanced PowerPAKr |
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Si5476DU 08-Apr-05 | |
Contextual Info: Si7947DP New Product Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.014 @ VGS = - 10 V - 13.7 0.025 @ VGS = - 4.5 V - 10.1 APPLICATIONS D Battery Switch D Load Switch - 30 PowerPAKt SO-8 |
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Si7947DP Si7947DP-T1 S-31264â 16-Jun-03 | |
Contextual Info: Si7222DN New Product Vishay Siliconix Dual N-Channel 40-V D-S MOSFET PRODUCT SUMMARY VDS (V) 40 FEATURES rDS(on) (W) ID (A) 0.042 @ VGS = 10 V 6e 0.047 @ VGS = 4.5 V 5e Qg (Typ) 8 nC D TrenchFETr Power MOSFET D Low Thermal Resistance PowerPAKr Package with Small Size and Low 1.07-mm |
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Si7222DN 07-mm Si7222DN-T1 08-Apr-05 | |
si7615
Abstract: SI7615ADN SI7615A
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Si7615ADN Si7615ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si7615 SI7615A | |
Si7454DDPContextual Info: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8 |
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Si7454DDP Si7454DDP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
SIA461DJT1GE3
Abstract: 63838 sia461djt
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SiA461DJ SC-70 SC-70-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SIA461DJT1GE3 63838 sia461djt | |
SI7114ADNContextual Info: Specification Comparison Vishay Siliconix Si7114ADN vs. Si7114DN Description: Package: Pin Out: N-Channel, 30 V D-S MOSFET PowerPAK 1212-8 Identical Part Number Replacements: Si7114ADN-T1-GE3 replaces Si7114DN-T1-E3 Si7114ADN-T1-GE3 replaces Si7114DN-T1-GE3 |
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Si7114ADN Si7114DN Si7114ADN-T1-GE3 Si7114DN-T1-E3 Si7114DN-T1-GE3 07-Oct-10 | |
Contextual Info: New Product SiR316DP Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, g 0.0068 at VGS = 10 V 30g 0.0093 at VGS = 4.5 V 30g VDS (V) 25 Qg (Typ.) 7.4 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21 Definition |
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SiR316DP 2002/95/EC SiR316DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
si5429
Abstract: marking G2 Si5429DU
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Si5429DU Si5429DU-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si5429 marking G2 |