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    SIMM-30 TIMING Search Results

    SIMM-30 TIMING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AM27S25DM Rochester Electronics LLC AM27S25 - OTP ROM Visit Rochester Electronics LLC Buy
    9513ASP Rochester Electronics LLC System Timing Controller Visit Rochester Electronics LLC Buy
    AM9513AJC-G Rochester Electronics LLC 9513A - System Timing Controller Visit Rochester Electronics LLC Buy
    ICM7170AIDG Rochester Electronics LLC ICM7170 - Real Time Clock, CMOS Visit Rochester Electronics LLC Buy
    AM27C256-70PI Rochester Electronics LLC AM27C256 - 256Kb (32K x 8-Bit) CMOS OTP EPROM Visit Rochester Electronics LLC Buy

    SIMM-30 TIMING Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MA0940J00TASN60

    Abstract: MA0940T00TASN60 FPM RAM
    Text: Order this document by 5VFPMU9S/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M x 9 5 V, FPM, Unbuffered DRAM Single-In-Line Memory Module SIMM 4 Megabyte • JEDEC–Standard 30–Lead Single–In–Line Memory Module (SIMM) 4M x 9 (4MB) 30–LEAD SIMM CASE 839A–01 SOJ


    Original     		MA0940J00TASN60 MA0940T00TASN60 MA0940J00TASN60 MA0940T00TASN60 FPM RAM PDF

    Ras 1210

    Abstract: MB084CJ00TASN60 MB084CT00TASN60 DRAM 4M x 8
    Text: Order this document by 5VEDOU8S/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M x 8 5 V, EDO, Unbuffered DRAM Single-In-Line Memory Module SIMM 4 Megabyte 4M x 8 (4MB) SOJ 30–LEAD SIMM CASE 839A–01 • JEDEC–Standard 30–Lead Single–In–Line Memory Module (SIMM)


    Original     		MB084CJ00TASN60 MB084CT00TASN60 Ras 1210 MB084CJ00TASN60 MB084CT00TASN60 DRAM 4M x 8 PDF

    MCM81430

    Abstract: MCM81430S70 5Bp power control 30 pin simm memory dynamic MCM81430S60 Nippon capacitors
    Text: MOTOROLA Order this document by MCM81430/D SEMICONDUCTOR TECHNICAL DATA MCM81430 1M x 8 Bit Dynamic Random Access Module S PACKAGE SIMM MODULE CASE 839A-01 The MCM81430 is an 8M dynamic random access memory DRAM module organized as 1,048,576 x 8 bits. The module is a 30-lead single-in-line memory module (SIMM) consisting of two MCM54400AN DRAMs housed in a 20/26 J-lead small


    Original     		MCM81430/D MCM81430 39A-01 MCM81430 30-lead MCM54400AN MCM81430/D* MCM81430S70 5Bp power control 30 pin simm memory dynamic MCM81430S60 Nippon capacitors PDF

    FPM DRAM 30-pin SIMM

    Abstract: 9715 SMART Modular Technologies 30 pin simm 16MX1 16MX1-DRAM
    Text: SMART SM5091610U4PUUU Modular Technologies November 21, 1996 16MByte 16M x 9 DRAM Module - 16Mx1 based 30-pin SIMM Part Numbers Features • • • • • • • • • • Standard Configuration Access Time Operation Mode Operating Voltage Refresh


    Original     		SM5091610U4PUUU 16MByte 16Mx1 30-pin SM509161004PUUU SM509161014PUUU 60/70/80ns 300mil 16Mx1 FPM DRAM 30-pin SIMM 9715 SMART Modular Technologies 30 pin simm 16MX1-DRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: LG Semicon 30 Pin SIMM DATA SHEET 2 72 Pin SIMM DATA SHEET 3 TIMING DIAGRAM 4 DISTRIBUTORS 5


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Order this document by 5VFPMU8S/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA DRAM Single-In-Line Memory Module SIMM 4 Megabyte 4M X 8 (4MB) 30-LEAD SIMM CASE 839A—01 • JEDEC-Standard 30-Lead Single-In-Line Memory Module (SIMM) • Single 5 V Power Supply, TTL-Compatible Inputs and Outputs


    OCR Scan     		30-Lead 84C430S60 CM84CT430S60 CM84C430S70 84CT430S70 PDF

    FPM DRAM 30-pin SIMM

    Abstract: GMM7322110CMS simm 72 pin edo 30 SIMM GMM794Q00CS 30-pin SIMM SG4M edo dram 72-pin simm
    Text: LG Semicon PRODUCT INDEX • 1M Byte DRAM MODULES 30 pin SIMM GMM781000CNS 1M x8B it, 1KRef„ F P M -. 3 5 GMM791000CNS 1M x9B it, 1KRef., F P M - 42 • 4MByte DRAM MODULES (30 pin SIMM)


    OCR Scan     		GMM781000CNS GMM791000CNS GMM784000CS GMM794Q00CS GMM7321000CS/SG GMM7321010CS/SG GMM7321000CNS/SG GMM7321200CNS/SG GMM7321010CNS/SG GMM7321210CNS/SG FPM DRAM 30-pin SIMM GMM7322110CMS simm 72 pin edo 30 SIMM 30-pin SIMM SG4M edo dram 72-pin simm PDF

    MT3D49

    Abstract: No abstract text available
    Text: PRELIMINARY M IC R O N 4 MEG 4 MEG DRAM MODULE X MT3D49 9 DRAM MODULE 9 DRAM X FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages Leadless 30-pin SIMM 30-Pin SIMM (DE-6) V cc CAS DQ1 AO A1


    OCR Scan     		MT3D49 30-pin, 048-cycle 30-Pin A0-A10; A0-A10 PDF

    T2D19

    Abstract: No abstract text available
    Text: M IC R O N MT2D18 1 MEG X 8 DRAM MODULE I 1 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT2D18M-6 PIN ASSIGNMENT Top View 30-Pin SIMM


    OCR Scan     		MT2D18 30-pin MT2D18M-6 DG113SQ T2D19 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE M IC R O N 16 MEG X MT8D168 8 DRAM M OD ULE 16 MEG x 8 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 • Packages Leadless 3 0 -pin SIMM Leaded 30-pin SIP 30-Pin SIMM (T-6)


    OCR Scan     		MT8D168 30-pin 200mW 096-cycle A0-A10; A0-A11 MT8DI68 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT2D48 4 MEG X 8 DRAM MODULE MICRON I TECHNOLOGY. INC DRAM 4 MEG M O D U LE IV IU U U U L 4 MEGABYTE, 5V, FAST PAGE MODE X 8 FEATURES OPTIONS MARKING • Timing 60ns access 70ns access -6 -7 • Packages 30-pin SIMM M PIN ASSIGNMENT Front View 30-Pin SIMM


    OCR Scan     		MT2D48 30-pin T2D48M-6 110ns 130ns PDF

    B 1403 N circuit Diagram

    Abstract: No abstract text available
    Text: Order this document by 5VFPMU9S/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M 4M X 9 4MB 30-LEAD SIMM CASE 839A-01 4 Megabyte • JEDEC-Standard 30-Lead Single-ln-Line Memory Module (SIMM) • Single 5 V Power Supply, TTL-Compatible Inputs and Outputs • Fast Page Mode (FPM)


    OCR Scan     		30-Lead 39A-01 MCM94C430S70 MCM94CT430S70 MCM94C430S60 MCM94CT430S60 B 1403 N circuit Diagram PDF

    839D-01

    Abstract: No abstract text available
    Text: Order this document by 5VFPMU9S/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M 4M X 9 4MB 30-LEAD SIMM CASE 839A-01 SOJ CASE 839D-01 TSOP 4 Megabyte • JEDEC-Standard 30-Lead Single-ln-Line Memory Module (SIMM) • Single 5 V Power Supply, TTL-Compatlble Inputs and Outputs


    OCR Scan     		30-Lead 39A-01 839D-01 MA0940J00TASN60 MA0940T00TASN60 PDF

    Untitled

    Abstract: No abstract text available
    Text: Order this document by 5VEDOU8S/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4M X 8 5 V, EDO, Unbuffered DRAM Single-ln-Line Memory Module SIMM 4 Megabyte • JEDEC-Standard 30-Lead Single-ln-Line Memory Module (SIMM) • Single 5 V Power Supply, TTL-Compatible Inputs and Outputs


    OCR Scan     		30-Lead MB084CJ00TASN60 MB084CT00TASN60 PDF

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N MT8C8025 DRAM MODULE 1MEG x 8 DRAM NIBBLE MODE FEATURES MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30-pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C8025 is a randomly accessed solid-state


    OCR Scan     		MT8C8025 30-pin 1575mW PDF

    30-pin simm memory

    Abstract: No abstract text available
    Text: [M IC R O N MT8C8026 1MEG x 8 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C8026 is a randomly accessed solid-state


    OCR Scan     		MT8C8026 30-pin 1575mW 30-pin simm memory PDF

    MT8C

    Abstract: No abstract text available
    Text: M IC R O N MT8C9026 1MEG x 9 DRAM DRAM MODULE STATIC COLUMN PIN ASSIGNMENT (Top View OPTIONS MARKING • Timing 80ns access 100ns access 120ns access • Packages: Leaded 30 -pin SIP Leadless 30-pin SIMM -10 -12 MN M GENERAL DESCRIPTION The MT8C9026 is a randomly accessed solid-state


    OCR Scan     		MT8C9026 30-pin 1575mW MT8C PDF

    Untitled

    Abstract: No abstract text available
    Text: |U |C = R O N 4 MEG DRAM MODULE X 8 MT8D48 DRAM MODULE 4 MEG X 8 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 • Packages Leadless 30 -pin SIM M 30-Pin SIMM (DE-3) Vcc CAS D01


    OCR Scan     		MT8D48 30-pin 024-cycle T8D48M-6 A0-A10 PDF

    Untitled

    Abstract: No abstract text available
    Text: |U |IC =R O N 4 MEG 4 MEG DRAM MODULE X MT9D49 9 DRAM MODULE X 9 DRAM FAST PAGE MODE FEATURES PIN ASSIGNMENT Top View OPTIONS MARKING • Timing 60ns access 70ns access 80ns access -6 -7 Packages Leadless 30 -pin SIM M 30-Pin SIMM (DE-4) Vcc CAS DQ1 DQ 2


    OCR Scan     		MT9D49 30-pin 024-cycle A0-A10 PDF

    256k 30-pin SIMM

    Abstract: 30-pin simm memory MT8259 30-pin SIMM
    Text: |U|IC=RON MT8259 256K X 8 DRAM DRAM MODULE PIN ASSIGNMENT Top View OPTIONS Vcc CÄ5 DQ1 AO A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 NC NC DQ6 MARKING • Timing 80ns access 100ns access 120ns access 150ns access • Packages: Leadless 30-pin SIMM Leaded 30-pin SIP


    OCR Scan     		MT8259 30-pin 120mW 1200mW 256k 30-pin SIMM 30-pin simm memory MT8259 30-pin SIMM PDF

    MCM91000

    Abstract: motorola mcm91000s
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 MCM9L1000 1Mx9 Bit Dynamic Random Access Memory Module The MCM 91000 and MCM9L1000 are 9M dynam ic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead single-in-line memory m odules (SIMM) or 30-pin single-in-line packages (SIP)


    OCR Scan     		MCM9L1000 30-lead 30-pin CM511000A MCM511000A 9L1000 MCM91000AS70 MCM91000AS00 M91000AS MCM9L1000AS70 MCM91000 motorola mcm91000s PDF

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N DRAM 256K X 8 MT2D2568 DRAM MODULE 256K x 8 DRAM FAST PAGE MODE (MT2D2568 _ MODULE IV IW L /lS k b . LOW POWER, EXTENDED REFRESH (MT2D2568 L) FEATURES PIN ASSIGNMENT (Top View) OPTIONS • Packages Leadless 30-pin SIMM Leaded 30-pin SIP • Power/Refresh


    OCR Scan     		MT2D2568 30-pin 350mW 512-cycle MT2D2568) PDF

    MCM91000-70

    Abstract: MCM91000SG motorola mcm91000s
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 9 Bit Dynamic Random Access Memory Module MCM91000 MCM9L1000 The MCM91000 and MCM9L1000 are 9M dynamic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead single­ in-line memory modules (SIMM) or 30-pin single-in-line packages (SIP) consisting of


    OCR Scan     		MCM91000 MCM9L1000 30-lead 30-pin MCM511000A 9L1000 MCM91000L70 MCM91000L80 MCM9L1000L70 MCM91000-70 MCM91000SG motorola mcm91000s PDF

    30-pin simm memory "16m x 8"

    Abstract: No abstract text available
    Text: STI916100 30-PIN SIMMS 1 6 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI916100 is a 16M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI916100 consist of nine CMOS 16M x 1 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A


    OCR Scan     		STI916100 30-PIN STI916100 24-pin STI916100-xxT) STI916100-xxG) 30-pin simm memory "16m x 8" PDF