Contextual Info: fUIICRON DRAM _ . . - . _ _ Ä 1 MEG X 8 1 MEG x 8 FAST-PAGE-MODE _ MT2D18 DRAM MODULE d ra m MT2D18 LOW POWER, FY T F M n P n RF EXTENDED REFRESH (MT2D18 L) M O D U LE • ■ I V / 1 ^ W ^ I— FEATURES • Industry-standard pinout in a 30-pin, single-in-line

FPM DRAM 30-pin SIMM

Abstract: T2D18
Contextual Info: I^ IIC n D N lEG DRAM MODULE X 8 MT2D18 DRAM MODULE 1 MEG x 8 1 MEGABYTE, 5V, FAST PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 30-pin, single-in-line m emory m odule SIMM • High-perform ance CM OS silicon-gate process • Single 5V ±10% power supply

T2D19

Contextual Info: M IC R O N MT2D18 1 MEG X 8 DRAM MODULE I 1 MEG X 8 DRAM DRAM MODULE FAST PAGE MODE FEATURES OPTIONS MARKING Timing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 30-pin SIMM M Part Number Example: MT2D18M-6 PIN ASSIGNMENT Top View 30-Pin SIMM

T2D18

Contextual Info: I^ IIC R O IS I 1 MEG 1 MEG DRAM MODULE X X MT2D18 8 DRAM M ODULE 8 DRAM FAST PAGE MODE FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-perform ance CM OS silicon-gate process • Single 5V +10% power supply • Low power, 6mW standby; 450mW active, typical

Contextual Info: MT2D18 1 MEG X 8 DRAM MODULE M IC R O N 1 MEG DRAM MODULE X8 DRAM FAST PAGE MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry standard pinout in a 30-pin, single-in-line memory module • High-performance, CMOS silicon-gate process

DM-01

Abstract: Techno RC
Contextual Info: MT2D18 1 MEG x 8 DRAM MODULE I^ IC R O N REFRESH _ Returning RAS and CAS HIGH terminates a m emory cycle and decreases chip current to a reduced standby level. A lso, the chip is preconditioned for the next cycle during the RAS HIGH time. M emory cell data is retained in its

30-pin

Contextual Info: |V |IC = R O N 1 MEG DRAM MODULE X 8 MT2D18 DRAM MODULE 1 MEG X 8 DRAM FAST PAGE MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES PIN ASSIGNMENT (Top View) • H ig h -p erfo rm a n ce, C M O S silico n -g a te p ro cess • Sin gle 5V ± 1 0 % p o w er sup p ly

MT4C4001

Abstract: CC3220
Contextual Info: I^ IIC Z R O N 1 MEG 1 MEG DRAM MODULE X X 8 MT2D18 DRAM MODULE 8 DRAM FAST-PAGE-MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry-standard pinout in a 30-pin, single-in-line memory module • High-performance CMOS silicon-gate process

Contextual Info: NICRON SEMICONDUCTOR INC b3E » MICRON □ R A M 1 M E G _ U U blllSMT 0007*110 OflT « U R N 1 MEG x 8 X 8 MT2D18 DRAM MODULE D R A M FAST-PAGE-MODE (MT2D18 l o w p o w e r, F EXTENDED X T F M D F D RE REFRESH (MT2D18 L) MODULE IV I V / U • U FEATURES

Contextual Info: niCRON TECHNOLOGY INC SSE D b l l l S 1*1? OODMbS? bTS M T2D18 1 MEG X 8 DRAM M O DULE MICRON • IMRN TECHNOLOGY. INC. -\5 £ DRAM MODULE 1 MEG X8 DRAM FAST PAGE MODE MT2D18 LOW POWER, EXTENDED REFRESH (MT2D18 L) FEATURES • Industry standard pinout in a 30-pin, single-in-line

FPM DRAM 30-pin SIMM

Abstract: 30 pin simm dram module 30 pin FPM DRAM 30-pin 30-pin simm memory "30 pin simm" MT2D18M-6 30-pin SIMM
Contextual Info: OBSOLETE MT2D18 1 MEG x 8 DRAM MODULE DRAM MODULE 1 MEG x 8 1 MEGABYTE, 5V, FAST PAGE MODE FEATURES • JEDEC- and industry-standard pinout in a 30-pin, single-in-line memory module SIMM • High-performance CMOS silicon-gate process • Single 5V ±10% power supply

Contextual Info: •«»•gì gl- MICRON TECHNOLOGY INC »Min i1,‘i-,.1j, Éinttlr^rirrr- BflE D bill 54*5 00Q231S 4 rr? T*’ . IMRN ■"* 1 MEG DRAM MODULE X 8 DRAM FAST PAGE MODE • Industry standard pinout in a 30-pin, single-in-line memory module • High-performance, CMOS silicon gate process