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    SILICON ON INSULATOR SRAM Search Results

    SILICON ON INSULATOR SRAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AV-THLIN2BNCM-025 Amphenol Cables on Demand Amphenol AV-THLIN2BNCM-025 Thin-line Coaxial Cable - BNC Male / BNC Male (SDI Compatible) 25ft Datasheet
    CN-DSUB50PIN0-000 Amphenol Cables on Demand Amphenol CN-DSUB50PIN0-000 D-Subminiature (DB50 Male D-Sub) Connector, 50-Position Pin Contacts, Solder-Cup Terminals Datasheet
    CN-DSUBHD62PN-000 Amphenol Cables on Demand Amphenol CN-DSUBHD62PN-000 High-Density D-Subminiature (HD62 Male D-Sub) Connector, 62-Position Pin Contacts, Solder-Cup Terminals Datasheet
    CO-058BNCX200-003 Amphenol Cables on Demand Amphenol CO-058BNCX200-003 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 3ft Datasheet
    CO-058BNCX200-050 Amphenol Cables on Demand Amphenol CO-058BNCX200-050 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 50ft Datasheet

    SILICON ON INSULATOR SRAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SAE J2411

    Abstract: rain sensor BOSCH for car application steering controlled headlight report ecu Bosch ICs car ecu microprocessors 24 v temic ecu list of sensors used in bmw car BOSCH ECU microcontroller microprocessors used in car ecus siemens ecu VDO
    Text: Semiconductors Philips - the vital link in the interconnected car Semiconductors Advancing silicon for automotive processes Connecting flexible intelligence in the car Philips’ SOI Silicon-on-Insulator technology is the Meeting the comfort, convenience, safety and security demands of


    Original     		PDF

    bsim3

    Abstract: IMD2 transistor metal oxide in capacitor "X-Fab" Core cell library transistor ag metal sheet thickness sensor 45 nm library breakdown gate oxide
    Text: 1.0 µm SOI Process 1.0 µm Silicon-On-Insulator Technology 1.0 µm Non-fully Depleted SOI Technology with: Applications 1000 nm Box Oxide - Dielectric Isolated Mixed-Signal multi voltage systems 250 nm Active Silicon 25 nm Gate Oxide Thickness - High Temperature


    Original     		PDF

    nmos dynamic ram 6256

    Abstract: HX6256 D-10
    Text: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HX6256 1x106 1x1014 1x109 1x1011 28-Lead MIL-STD-1835, CDIP2-T28 36-Lead nmos dynamic ram 6256 HX6256 D-10

    HX6256

    Abstract: D-10
    Text: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF HX6256 1x106 1x1014 1x109 1x1011 28-Lead MIL-STD-1835, CDIP2-T28 36-Lead HX6256 D-10

    Untitled

    Abstract: No abstract text available
    Text: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)


    Original     		PDF 1x106 1x1014 1x109 1x1011 1x10-10 HX6256 28-Lead MIL-STD-1835,

    honeywell hx3000

    Abstract: HX3000
    Text: HIGH PERFORMANCE SOI-V GATE ARRAYS HX3000 FAMILY FEATURES • • • • • • • Fabricated on Honeywell’s Radiation Hardened TM 0.30µm Leff RICMOS Silicon On Insulator (SOI-V) process Array Sizes to 1.0M Usable Gates 3.3V or 2.5V Core Operation


    Original     		PDF HX3000 honeywell hx3000 HX3000

    AN9106

    Abstract: HS-65647RH BOSSARD
    Text: Special ESD Considerations for the HS-65643RH and HS-65647RH Radiation Hardened SOS SRAMs TM Application Note June 1992 The HS-65643RH and HS-65647RH SRAMs are fabricated on TSOS4, an advanced 1.25mm dual level metal silicon on sapphire process. The sapphire substrate used in this process is an excellent electrical insulator, and allows the


    Original     		PDF HS-65643RH HS-65647RH HS-65643RH CH-1009 AN9106 BOSSARD

    HRT6408

    Abstract: HX6408 honeywell memory sram CDR33 S150 129a1
    Text: HRT6408 HRT6408 512k x 8 Static RAM Radiation Tolerant Features • ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read/Write Cycle Times Typical Write = 7 ns Typical Read = 12ns ■ Asynchronous Operation ■ CMOS Compatible I/O


    Original     		PDF HRT6408 HRT6408 3X105 1x10-12 2x10-12 1x1014 36-Lead 22CFR N61-1004-000-000 HX6408 honeywell memory sram CDR33 S150 129a1

    HS-65647RH

    Abstract: symposium
    Text: Special ESD Considerations for the HS-65643RH and HS-65647RH Radiation Hardened SOS SRAMs Application Note June 1992 AN9106 Author: Steve Rivet The HS-65643RH and HS-65647RH SRAMs are fabricated on TSOS4, an advanced 1.25mm dual level metal silicon on sapphire process. The sapphire substrate used in this process is an excellent electrical insulator, and allows the


    Original     		PDF HS-65643RH HS-65647RH AN9106 HS-65643RH symposium

    honeywell sn f10

    Abstract: HX6356 A12 SMD TRANSISTOR Honeywell load cell
    Text: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times


    Original     		PDF HX6356 1x106 1x1014 1x1011 1x1012 1x10-10 honeywell sn f10 HX6356 A12 SMD TRANSISTOR Honeywell load cell

    HX6356

    Abstract: No abstract text available
    Text: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times


    Original     		PDF HX6356 1x106 1x1014 1x1011 1x1012 1x10-10 HX6356

    honeywell hx3000

    Abstract: 440K HX3000 HX306G
    Text: HIGH PERFORMANCE SOI-V ASICS HX3000 FAMILY FEATURES • • • • • • • Fabricated on Honeywell’s Radiation Hardened 0.30µm Leff RICMOSTM Silicon On Insulator (SOI-V) process ASICS to 2.0M Usable Gates 3.3V or 2.5V Core Operation Mixed Voltage I/O Power Supply (2.5V, 3.3V)


    Original     		PDF HX3000 3x105 1x106 1x10-11 HX3000 honeywell hx3000 440K HX306G

    HX84050

    Abstract: No abstract text available
    Text: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2


    Original     		PDF HX84050 1x1014 1x109 1x1011 1x10-10 200-Lead HX84050

    Untitled

    Abstract: No abstract text available
    Text: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times


    Original     		PDF 1x106 1x1014 1x1011 1x1012 1x10-10 HX6356 36-Lead

    ibm edram

    Abstract: Cu-45HP CU45HP IBM HSS TGD03009-USEN-01 Ternary CAM
    Text: IBM Systems and Technology Group IBM Cu-45HP Take semiconductor performance to new heights with an innovative SOI-based design system A new breed of custom logic Highlights ● Boost performance for next-generation applications with silicon-on-insulator SOI technology


    Original     		PDF Cu-45HP Cu-45HP, TGD03009-USEN-01 ibm edram Cu-45HP CU45HP IBM HSS TGD03009-USEN-01 Ternary CAM

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jam Process (Leff = 0.6 ^m) • Total Dose Hardness through 1x106 rad (S i0 2)


    OCR Scan     		PDF HX84050 1x106 1x101 1x109 0GD1755

    HX6356

    Abstract: smd transistor AL2
    Text: Honeywell Aerospace Electronics 32K X 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 pm Process (Leff= 0.6 |iim) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF 1x106rad 1x1014crrv2 1x101 HX6356 36-Lead 1253C, HX6356 smd transistor AL2

    CDIP2-T28

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |nm Process (Leff= 0.6 (xm) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HX6256 28-Lead CDIP2-T28

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Aerospace Electronics HX6356 32K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j.m Process (Left= 0.6 (im) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)


    OCR Scan     		PDF HX6356 1x106rad 1x101

    AVW smd

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jim Process (Lett = 0.6 jxm) • Total Dose Hardness through 1x10 rad (S i0 2)


    OCR Scan     		PDF HX84050 1x101 1x109 200-Lead AVW smd

    LAD R

    Abstract: No abstract text available
    Text: Honeywel Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff = 0.6 |a,m) • Total Dose Hardness through 1x106 rad (S i0 2)


    OCR Scan     		PDF HX84050 1x106 1x101 1x109 200-Lead LAD R

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HX6256 28-Lead GQG1711

    5962-95845

    Abstract: HX6356
    Text: Honeywell Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)


    OCR Scan     		PDF 1x106rad 1x101 HX6356 36-Lead 5962-95845 HX6356

    smd transistor NJ

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 32K x 8 STATIC RAM— SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106 rad(S i02)


    OCR Scan     		PDF 1x106 1x101 1x109 HX6256 28-Lead smd transistor NJ