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    HX6408 Search Results

    HX6408 Datasheets (28)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HX6408 Honeywell 512K x 8 STATIC RAM-SOI Original PDF
    HX6408 Honeywell 512k x 8 STATIC RAM Original PDF
    HX6408-BFM Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KBFM Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KBHM Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KBNM Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KBRN Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KEHM Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KENM Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KERN Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KQFM Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KQHN Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KQNN Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KSFN Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KSRM Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KVFM Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KVHN Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KVNN Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KVRN Honeywell 512K x 8 STATIC RAM- SOI Original PDF
    HX6408KVRN Honeywell 512k x 8 STATIC RAM Original PDF

    HX6408 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HX6408 Advanced Information HX6408 512k x 8 STATIC RAM The 512K x 8 Radiation Hardened Static RAM is a high The RICMOS V low power process is a SOI CMOS performance 524,288 word x 8-bit static random access technology with an 80 Å gate oxide and a minimum


    Original     		PDF HX6408

    900198

    Abstract: HX6408
    Text: Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon On Insulator SOI 0.35 µm Process (Leff = 0.28 µm) • Read/Write Cycle Times ≤ 20 ns, (3.3 V), 0 to 80°C ≤ 25 ns, (3.3 V), -55 to 125°C


    Original     		PDF HX6408 3x105 1X106 1x1014 1x1010 1x1012 1x10-10 900198 HX6408

    Untitled

    Abstract: No abstract text available
    Text: HX6408 512K x 8 STATIC RAM The monolithic 512K x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory. It is fabricated with Honeywell’s radiation hardened technology. It is QML qualified and is designed for use in systems


    Original     		PDF HX6408 710mW 40MHz ADS-14132

    NSL 32 equivalent

    Abstract: HX6408
    Text: HX6408 Advanced Information HX6408 512k x 8 STATIC RAM The 512K x 8 Radiation Hardened Static RAM is a high The RICMOS V low power process is a SOI CMOS performance 524,288 word x 8-bit static random access technology with an 80 Å gate oxide and a minimum


    Original     		PDF HX6408 NSL 32 equivalent HX6408

    NSL 32 equivalent

    Abstract: HX6408
    Text: Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon On Insulator SOI 0.35 µm Process (Leff = 0.28 µm) • Read/Write Cycle Times ≤ 20 ns, (3.3 V), 0 to 80°C ≤ 25 ns, (3.3 V), -55 to 125°C


    Original     		PDF HX6408 3x105 1X106 1x1014 1x1010 1x1012 1x10-10 NSL 32 equivalent HX6408

    honeywell memory sram

    Abstract: hx6408 HXS6408
    Text: HXS6408 HXS6408 512k x 8 STATIC RAM The monolithic 512k x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low voltage systems operating


    Original     		PDF HXS6408 150nm HXS6408 22CFR honeywell memory sram hx6408

    HX6408

    Abstract: No abstract text available
    Text: HRT6408 512K x 8 STATIC RAM The monolithic 512k x 8 Radiation Tolerant Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low


    Original     		PDF HRT6408 150nm ADS-14194 HX6408

    HX6408

    Abstract: No abstract text available
    Text: HXS6408 HXS6408 512k x 8 STATIC RAM The monolithic 512k x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low voltage systems operating


    Original     		PDF HXS6408 150nm ADS-14163 HX6408

    HRT6408

    Abstract: HX6408 honeywell memory sram CDR33 S150 129a1
    Text: HRT6408 HRT6408 512k x 8 Static RAM Radiation Tolerant Features • ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read/Write Cycle Times Typical Write = 7 ns Typical Read = 12ns ■ Asynchronous Operation ■ CMOS Compatible I/O


    Original     		PDF HRT6408 HRT6408 3X105 1x10-12 2x10-12 1x1014 36-Lead 22CFR N61-1004-000-000 HX6408 honeywell memory sram CDR33 S150 129a1

    TSMC 0.18 um MOSfet

    Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
    Text: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes


    Original     		PDF QML-38535 MIL-PRF-38535 MIL-STD-790 MIL-STD-690 -581DSCC QML-38535 TSMC 0.18 um MOSfet M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221

    5962L0053605VYC

    Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
    Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A


    Original     		PDF MIL-HDBK-103AJ MIL-HDBK-103AH MIL-HDBK-103AJ 5962L0053605VYC 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA

    HX6408

    Abstract: No abstract text available
    Text: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02)


    OCR Scan     		PDF HX6408 5x105rad 1x109 1x101 40-Lead D2888 3Q172S HX6408

    HX6408

    Abstract: No abstract text available
    Text: Honeywel Advance Information Aerospace Electronics HX6408 512K x 8 STATIC RAM— SOI FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 2 5 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 |a,m Process (Leff = 0.28 |a,m)


    OCR Scan     		PDF 1x101 36-Lead HX6408 HX6408

    900198

    Abstract: HX6408 si02 1a15
    Text: Honeywel Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |a,m Process (Leff = 0.4 |a,m) • Read/Write Cycle Times < 2 5 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(S i02)


    OCR Scan     		PDF 5x105rad 1x109 1x101 40-Lead HX6408 900198 HX6408 si02 1a15