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    HX6408

    Abstract: No abstract text available
    Text: HRT6408 512K x 8 STATIC RAM The monolithic 512k x 8 Radiation Tolerant Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low


    Original     		PDF HRT6408 150nm ADS-14194 HX6408

    HRT6408

    Abstract: HX6408 honeywell memory sram CDR33 S150 129a1
    Text: HRT6408 HRT6408 512k x 8 Static RAM Radiation Tolerant Features • ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read/Write Cycle Times Typical Write = 7 ns Typical Read = 12ns ■ Asynchronous Operation ■ CMOS Compatible I/O


    Original     		PDF HRT6408 HRT6408 3X105 1x10-12 2x10-12 1x1014 36-Lead 22CFR N61-1004-000-000 HX6408 honeywell memory sram CDR33 S150 129a1

    5962L0053605VYC

    Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA
    Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A


    Original     		PDF MIL-HDBK-103AJ MIL-HDBK-103AH MIL-HDBK-103AJ 5962L0053605VYC 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA