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    SIJ478DP Price and Stock

    Vishay Siliconix SIJ478DP-T1-GE3

    MOSFET N-CH 80V 60A PPAK SO-8
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    DigiKey SIJ478DP-T1-GE3 Cut Tape 10,697 1
    • 1 $1.94
    • 10 $1.367
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    SIJ478DP-T1-GE3 Digi-Reel 10,697 1
    • 1 $1.94
    • 10 $1.367
    • 100 $1.94
    • 1000 $0.69078
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    SIJ478DP-T1-GE3 Reel 9,000 3,000
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    Vishay Intertechnologies SIJ478DP-T1-GE3

    N-CHANNEL 80-V (D-S) MOSFET - Tape and Reel (Alt: SIJ478DP-T1-GE3)
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    Avnet Americas SIJ478DP-T1-GE3 Reel 26 Weeks 6,000
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    Mouser Electronics SIJ478DP-T1-GE3 16,414
    • 1 $1.96
    • 10 $1.34
    • 100 $0.93
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    Verical SIJ478DP-T1-GE3 3,000 10
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    • 100 $0.8299
    • 1000 $0.6573
    • 10000 $0.6066
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    Arrow Electronics SIJ478DP-T1-GE3 Cut Strips 3,000 26 Weeks 1
    • 1 $1.3688
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    • 100 $0.8299
    • 1000 $0.6573
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    Newark SIJ478DP-T1-GE3 Cut Tape 2,480 1
    • 1 $1.67
    • 10 $1.39
    • 100 $1.11
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    SIJ478DP-T1-GE3 Reel 6,000
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    • 10000 $0.629
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    TME SIJ478DP-T1-GE3 3,000
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    • 10000 $0.79
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    Chip1Stop SIJ478DP-T1-GE3 3,000
    • 1 $1.3688
    • 10 $1.0808
    • 100 $0.8299
    • 1000 $0.667
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    EBV Elektronik SIJ478DP-T1-GE3 29 Weeks 3,000
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    SIJ478DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIJ478DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 60A SO-8L Original PDF

    SIJ478DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S14064

    Abstract: No abstract text available
    Text: SPICE Device Model SiJ478DP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF SiJ478DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 S14064

    Untitled

    Abstract: No abstract text available
    Text: SiJ478DP www.vishay.com Vishay Siliconix N-Channel 80 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 80 • TrenchFET Power MOSFET RDS(on) () Max. ID (A) 0.0080 at VGS = 10 V 60a 0.0088 at VGS = 6.0 V 60a 0.0115 at VGS = 4.5 V 54 Qg (Typ.) 17.1 nC PowerPAK® SO-8L Single


    Original     		PDF SiJ478DP SiJ478DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		PDF SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs