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    SIJ470DP Price and Stock

    Vishay Siliconix SIJ470DP-T1-GE3

    MOSFET N-CH 100V 58.8A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIJ470DP-T1-GE3 Cut Tape 690 1
    • 1 $1.57
    • 10 $1.282
    • 100 $0.9969
    • 1000 $0.68832
    • 10000 $0.68832
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    SIJ470DP-T1-GE3 Digi-Reel 1
    • 1 $1.57
    • 10 $1.282
    • 100 $0.9969
    • 1000 $0.68832
    • 10000 $0.68832
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    SIJ470DP-T1-GE3 Reel 3,000
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    • 10000 $0.58863
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    Vishay Intertechnologies SIJ470DP-T1-GE3

    N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SIJ470DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIJ470DP-T1-GE3 Reel 28 Weeks 6,000
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    • 10000 $0.80605
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    Mouser Electronics SIJ470DP-T1-GE3 1,618
    • 1 $1.56
    • 10 $1.29
    • 100 $0.997
    • 1000 $0.689
    • 10000 $0.588
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    Verical SIJ470DP-T1-GE3 3,000 3,000
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    • 10000 $1.0085
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    Newark SIJ470DP-T1-GE3 Reel 6,000
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    • 10000 $0.602
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    TTI SIJ470DP-T1-GE3 Reel 18,000 3,000
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    • 10000 $0.588
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    TME SIJ470DP-T1-GE3 3,000
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    • 10000 $0.65
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    EBV Elektronik SIJ470DP-T1-GE3 29 Weeks 3,000
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    Vishay Intertechnologies SIJ470DPT1GE3

    N-CHANNEL 100 V (D-S) MOSFET Power Field-Effect Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIJ470DPT1GE3 6,000
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    SIJ470DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIJ470DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 58.8A SO-8L Original PDF

    SIJ470DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiJ470DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    PDF SiJ470DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiJ470DP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0091 at VGS = 10 V 58.8 0.0100 at VGS = 7.5 V 54.6 VDS (V) 100 Qg (Typ.) 28.5 nC • 100 % Rg and UIS Tested • Material categorization: 


    Original
    PDF SiJ470DP SiJ470DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original
    PDF SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402

    N-Channel MOSFETs

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original
    PDF SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs