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    SIHS20N50C Price and Stock

    Vishay Siliconix SIHS20N50C-E3

    MOSFET N-CH 500V 20A SUPER247
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    DigiKey SIHS20N50C-E3 Tube 480
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    Vishay Intertechnologies SIHS20N50C-E3

    Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: SIHS20N50C-E3)
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    Avnet Americas SIHS20N50C-E3 Tube 480
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    Mouser Electronics SIHS20N50C-E3
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    TTI SIHS20N50C-E3 Tube 480
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    SIHS20N50C Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIHS20N50C-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 20A TO-247AD Original PDF

    SIHS20N50C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SIHS20N50C

    Abstract: N-channel MOSFET to-247 mosfet 1208
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with 20 A, 500 V, RDS on max . = 270 mW at VGS = 10 V I INNOVAT AND TEC O L OGY SiHS20N50C-E3 N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Gen. 6.4 Cell Technology in Super TO-247 Package


    Original     		PDF SiHS20N50C-E3 O-247 SiHS20N50C S11-0112-Rev. 31-Jan-11 VMN-PT0260-1208 N-channel MOSFET to-247 mosfet 1208

    SiHS20N50C

    Abstract: No abstract text available
    Text: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested


    Original     		PDF SiHS20N50C 2002/95/EC O-247AC O-247AC SiHS20N50C-E3 18-Jul-08

    AN609

    Abstract: No abstract text available
    Text: SiHS20N50C_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHS20N50C AN609, 2104m 5542m 2439m 0813m AN609

    Untitled

    Abstract: No abstract text available
    Text: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested


    Original     		PDF SiHS20N50C 2002/95/EC Super-247 SiHS20N50C-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SiHS20N50C

    Abstract: No abstract text available
    Text: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested


    Original     		PDF SiHS20N50C 2002/95/EC Super-247 Super-247 SiHS20N50C-E3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHS20N50C_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHS20N50C AN609, 7648m 0088m 4242m 8022m 2104m 5542m 2439m 0813m

    SiHS20N50C

    Abstract: No abstract text available
    Text: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested


    Original     		PDF SiHS20N50C 2002/95/EC Super-247 Super-247 SiHS20N50C-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested


    Original     		PDF SiHS20N50C 2002/95/EC Super-247 SiHS20N50C-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    diode s11

    Abstract: SiHS20N50C
    Text: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested


    Original     		PDF SiHS20N50C 2002/95/EC Super-247 Super-247 SiHS20N50C-E3 18-Jul-08 diode s11

    SiHx8N50D

    Abstract: SiHx8N50C switching transformer atx
    Text: VISHAY SILICONIX www.vishay.com MOSFETs Application Note Two-Switch Forward Converter: Operation, FOM, and MOSFET Selection Guide by Philip Zuk and Sanjay Havanur The two-switch forward converter is a widely used topology and considered to be one of the most reliable converters ever. Its


    Original     		PDF Q2/2014 SiHx7N60E SiHx6N65E 14-Jan-14 SiHx8N50D SiHx8N50C switching transformer atx

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETS N-Channel Planar FET Gen. 6.4 Cell Technology in Super TO-247 Package KEY BENEFITS • 20 A, 500 V, RDS on max. = 270 mW at VGS = 10 V • Improved gate charge: Qg max. = 76 nC • Low FOM: RDS(on) x Qg = 20.52 WnC


    Original     		PDF SiHS20 O-247 2002/95/EC SiHS20N50C-E3 SiHS20N50C VMN-PT0260-1102

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836