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Vishay Siliconix SIHS20N50C-E3 MOSFET N-CH 500V 20A SUPER247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHS20N50C-E3	Tube			480	1 - 10 - 100 - 1000 $3.9625 10000 $3.9625	Buy Now
Vishay Intertechnologies SIHS20N50C-E3 Trans MOSFET N-CH 500V 20A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: SIHS20N50C-E3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIHS20N50C-E3	Tube			480	1 - 10 - 100 - 1000 $3.89914 10000 $3.72941	Buy Now
Mouser Electronics	SIHS20N50C-E3					1 - 10 - 100 - 1000 $4.64 10000 $4.64	Get Quote
TTI	SIHS20N50C-E3	Tube			480	1 - 10 - 100 - 1000 $4.05 10000 $4.05	Buy Now

SIHS20 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIHS20N50C-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 20A TO-247AD		Original	PDF

SIHS20 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SIHS20N50C Abstract: N-channel MOSFET to-247 mosfet 1208 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with 20 A, 500 V, RDS on max . = 270 mW at VGS = 10 V I INNOVAT AND TEC O L OGY SiHS20N50C-E3 N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Gen. 6.4 Cell Technology in Super TO-247 Package	Original	PDF	SiHS20N50C-E3 O-247 SiHS20N50C S11-0112-Rev. 31-Jan-11 VMN-PT0260-1208 N-channel MOSFET to-247 mosfet 1208
SiHS20N50C Abstract: No abstract text available Text: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested	Original	PDF	SiHS20N50C 2002/95/EC O-247AC O-247AC SiHS20N50C-E3 18-Jul-08
AN609 Abstract: No abstract text available Text: SiHS20N50C_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	SiHS20N50C AN609, 2104m 5542m 2439m 0813m AN609
Untitled Abstract: No abstract text available Text: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested	Original	PDF	SiHS20N50C 2002/95/EC Super-247 SiHS20N50C-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
SiHS20N50C Abstract: No abstract text available Text: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested	Original	PDF	SiHS20N50C 2002/95/EC Super-247 Super-247 SiHS20N50C-E3 11-Mar-11
Untitled Abstract: No abstract text available Text: SiHS20N50C_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	SiHS20N50C AN609, 7648m 0088m 4242m 8022m 2104m 5542m 2439m 0813m
SiHS20N50C Abstract: No abstract text available Text: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested	Original	PDF	SiHS20N50C 2002/95/EC Super-247 Super-247 SiHS20N50C-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested	Original	PDF	SiHS20N50C 2002/95/EC Super-247 SiHS20N50C-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
diode s11 Abstract: SiHS20N50C Text: SiHS20N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • • • • • • • • 560 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.270 76 Qgs (nC) 21 Qgd (nC) 34 Configuration Single D Low Figure-of-Merit Ron x Qg 100 % Avalanche Tested	Original	PDF	SiHS20N50C 2002/95/EC Super-247 Super-247 SiHS20N50C-E3 18-Jul-08 diode s11
SiHx8N50D Abstract: SiHx8N50C switching transformer atx Text: VISHAY SILICONIX www.vishay.com MOSFETs Application Note Two-Switch Forward Converter: Operation, FOM, and MOSFET Selection Guide by Philip Zuk and Sanjay Havanur The two-switch forward converter is a widely used topology and considered to be one of the most reliable converters ever. Its	Original	PDF	Q2/2014 SiHx7N60E SiHx6N65E 14-Jan-14 SiHx8N50D SiHx8N50C switching transformer atx
Untitled Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . HIGH-VOLTAGE POWER MOSFETS N-Channel Planar FET Gen. 6.4 Cell Technology in Super TO-247 Package KEY BENEFITS • 20 A, 500 V, RDS on max. = 270 mW at VGS = 10 V • Improved gate charge: Qg max. = 76 nC • Low FOM: RDS(on) x Qg = 20.52 WnC	Original	PDF	SiHS20 O-247 2002/95/EC SiHS20N50C-E3 SiHS20N50C VMN-PT0260-1102
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836