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    Vishay Intertechnologies SIHF8N50L-E3

    N-CHANNEL 500V - Tape and Reel (Alt: SIHF8N50L-E3)
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    Avnet Americas SIHF8N50L-E3 Reel 1,000
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    SIHF8N50L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHF8N50L-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 8A TO220FP Original PDF

    SIHF8N50L Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V 1 Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved


    Original     		PDF SiHF8N50L O-220 2002/95/EC SiHF8N50L-E3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V 1 Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved


    Original     		PDF SiHF8N50L O-220 2002/95/EC SiHF8N50L-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF8N50L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiHF8N50L AN609, 17-Nov-10 6534m 3442m 8362m 4941m 1914m 1431m

    Untitled

    Abstract: No abstract text available
    Text: New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V 1 Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved


    Original     		PDF SiHF8N50L 2002/95/EC O-220 SiHF8N50L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SiHF8N50L

    Abstract: SiHF8N50L-E3 D 1703 L
    Text: New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V 1 Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved


    Original     		PDF SiHF8N50L 2002/95/EC O-220 SiHF8N50L-E3 18-Jul-08 D 1703 L

    Untitled

    Abstract: No abstract text available
    Text: New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V 1 Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved


    Original     		PDF SiHF8N50L 2002/95/EC O-220 SiHF8N50L-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    c25 diode to220

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with Industry-Best trr of 63 ns I INNOVAT AND TEC O L OGY SiHF8N50L-E3 N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFET 500 V Low-trr in TO-220 FULLPAK Package KEY BENEFITS • Low trr = 63 ns


    Original     		PDF SiHF8N50L-E3 O-220 07-Sep-09 VMN-PT0198-1208 c25 diode to220

    Untitled

    Abstract: No abstract text available
    Text: V ishay I ntertechn o l o g y, I nc . SiHF8N50 L- E3 RDS on max: 1.0 Ω @ VGS = 10 V, suitable for ZVS topology, industry-best trr of 63 ns features • Low Trr = 63 ns • Improved EMI results • Improved efficiency • Avoids internal body diode recovery failure


    Original     		PDF SiHF8N50 O-220 2002/95/EC SiHF8N50L-E3 S09-1703-Rev. 07-Sep-09 VMN-PT0198-1003

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836