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    SIHF8N50 Search Results

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    SIHF8N50 Price and Stock

    Vishay Siliconix SIHF8N50D-E3

    MOSFET N-CH 500V 8.7A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHF8N50D-E3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.64429
    • 10000 $0.64429
    		Buy Now
    Bristol Electronics SIHF8N50D-E3 850
    • 1 -
    • 10 -
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    • 1000 -
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    SIHF8N50D-E3 50 3
    • 1 -
    • 10 $1.875
    • 100 $0.7031
    • 1000 $0.7031
    • 10000 $0.7031
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    Quest Components SIHF8N50D-E3 680
    • 1 $2.4
    • 10 $2.4
    • 100 $2.4
    • 1000 $0.99
    • 10000 $0.99
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    SIHF8N50D-E3 40
    • 1 $2.5
    • 10 $2
    • 100 $1.25
    • 1000 $1.25
    • 10000 $1.25
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    Vishay Intertechnologies SIHF8N50D-E3

    N-CHANNEL 500V - Tape and Reel (Alt: SIHF8N50D-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHF8N50D-E3 Reel 1,000
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    • 1000 $0.6596
    • 10000 $0.6596
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    TTI SIHF8N50D-E3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.68
    • 10000 $0.62
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    TME SIHF8N50D-E3 1
    • 1 $1.26
    • 10 $1.13
    • 100 $0.9
    • 1000 $0.84
    • 10000 $0.84
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    EBV Elektronik SIHF8N50D-E3 13 Weeks 50
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    Vishay Intertechnologies SIHF8N50L-E3

    N-CHANNEL 500V - Tape and Reel (Alt: SIHF8N50L-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIHF8N50L-E3 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.61375
    • 10000 $0.61375
    		Buy Now

    SIHF8N50 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHF8N50D-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 8.7A TO220 FLPK Original PDF
    SIHF8N50L-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 8A TO220FP Original PDF

    SIHF8N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V 1 Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved


    Original     		PDF SiHF8N50L O-220 2002/95/EC SiHF8N50L-E3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V 1 Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved


    Original     		PDF SiHF8N50L O-220 2002/95/EC SiHF8N50L-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF8N50L_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF SiHF8N50L AN609, 17-Nov-10 6534m 3442m 8362m 4941m 1914m 1431m

    SiHF8N50D_RC

    Abstract: No abstract text available
    Text: SiHF8N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHF8N50D AN609, 4248m 2000m 2451m 6064m 1344m 8007m 2673m 23-May-12 SiHF8N50D_RC

    SIHF8N50D

    Abstract: No abstract text available
    Text: SiHF8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF SiHF8N50D O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V 1 Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved


    Original     		PDF SiHF8N50L 2002/95/EC O-220 SiHF8N50L-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SiHF8N50L

    Abstract: SiHF8N50L-E3 D 1703 L
    Text: New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V 1 Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved


    Original     		PDF SiHF8N50L 2002/95/EC O-220 SiHF8N50L-E3 18-Jul-08 D 1703 L

    Untitled

    Abstract: No abstract text available
    Text: V ishay I ntertechn o l o g y, I nc . SiHF8N50 L- E3 RDS on max: 1.0 Ω @ VGS = 10 V, suitable for ZVS topology, industry-best trr of 63 ns features • Low Trr = 63 ns • Improved EMI results • Improved efficiency • Avoids internal body diode recovery failure


    Original     		PDF SiHF8N50 O-220 2002/95/EC SiHF8N50L-E3 S09-1703-Rev. 07-Sep-09 VMN-PT0198-1003

    Untitled

    Abstract: No abstract text available
    Text: SiHF8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF SiHF8N50D O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHF8N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		PDF SiHF8N50D O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product SiHF8N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low Figure-of-Merit Ron x Qg 560 RDS(on) (Ω) VGS = 10 V 1 Qg (Max.) (nC) 34 Qgs (nC) 7.8 Qgd (nC) • 100 % Avalanche Tested • Gate Charge Improved • Trr/Qrr Improved


    Original     		PDF SiHF8N50L 2002/95/EC O-220 SiHF8N50L-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    c25 diode to220

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with Industry-Best trr of 63 ns I INNOVAT AND TEC O L OGY SiHF8N50L-E3 N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFET 500 V Low-trr in TO-220 FULLPAK Package KEY BENEFITS • Low trr = 63 ns


    Original     		PDF SiHF8N50L-E3 O-220 07-Sep-09 VMN-PT0198-1208 c25 diode to220

    IRF740BPBF

    Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . AND TEC I INNOVAT O L OGY D Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 MOSFETs - Increased Switching Speed High-Performance 400 V, 500 V, and 600 V MOSFETs Feature “Stripe” vs. “Cellular” Geometry Technology


    Original     		PDF O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Consumer Entertainment One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Consumer Entertainment Set-Top Boxes 4 LCD TVs 5 Games Consoles 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay


    Original     		PDF VMN-MS6761-1312

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836