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    SIHB22N60S Search Results

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    SIHB22N60S Price and Stock

    Vishay Siliconix SIHB22N60S-E3

    MOSFET N-CH 600V 22A TO263
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    DigiKey SIHB22N60S-E3 Tube
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    Vishay Siliconix SIHB22N60S-GE3

    MOSFET N-CH 600V 22A D2PAK
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    DigiKey SIHB22N60S-GE3 Reel
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    Vishay Siliconix SIHB22N60SGE3

    POWER MOSFET Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    ComSIT USA SIHB22N60SGE3 400
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    Vishay Intertechnologies SIHB22N60SE3

    POWER MOSFET Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    ComSIT USA SIHB22N60SE3 200
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    Vishay Intertechnologies SIHB22N60S

    Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK (Alt: SIHB22N60S)
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    EBV Elektronik SIHB22N60S 26 Weeks 1
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    SIHB22N60S Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIHB22N60S-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 22A D2PAK Original PDF
    SIHB22N60S-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V TO263 Original PDF

    SIHB22N60S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    0949

    Abstract: SiHB22N60S-E3
    Text: SiHB22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Halogen-free According to IEC 61249-2-21 Definition 650 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 98 Qgs (nC) 17 Qgd (nC) 25 Configuration • High EAR Capability


    Original     		PDF SiHB22N60S O-263) 2002/95/EC 11-Mar-11 0949 SiHB22N60S-E3

    SiHB22N60S-E3

    Abstract: SIHB22N60S
    Text: SiHB22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability


    Original     		PDF SiHB22N60S O-263) 2002/95/EC SiHB22N60S-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V RDS(on) max. at 25 °C () • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg


    Original     		PDF SiHB22N60S O-263) 2002/95/EC 11-Mar-11

    SIHB22N60S

    Abstract: No abstract text available
    Text: SiHB22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V RDS(on) max. at 25 °C () • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg


    Original     		PDF SiHB22N60S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SiHB22N60S-E3

    Abstract: No abstract text available
    Text: SiHB22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • High EAR Capability 650 RDS(on) (Ω) VGS = 10 V • Lower Figure-of-Merit Ron x Qg 0.190 Qg (Max.) (nC) 98 • 100 % Avalanche Tested Qgs (nC) 17 • High Peak Current Capability


    Original     		PDF SiHB22N60S O-263) 2002/95/EC SiHB22N60S-E3 18-Jul-08

    SIHB22N60S

    Abstract: No abstract text available
    Text: SiHB22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation one 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • High EAR capability 0.190 Qg max. (nC) 98 • Lower figure-of-merit Ron x Qg Qgs (nC)


    Original     		PDF SiHB22N60S O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sihb22n60sge3

    Abstract: SIHB22N60S
    Text: SiHB22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V RDS(on) max. at 25 °C () • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg


    Original     		PDF SiHB22N60S O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sihb22n60sge3

    SiHB22N60S-E3

    Abstract: SIHB22N60S
    Text: SiHB22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V RDS(on) () • Halogen-free According to IEC 61249-2-21 Definition 650 VGS = 10 V Qg (Max.) (nC) 0.190 • High EAR Capability 98 Qgs (nC) 17 Qgd (nC) 25 Configuration


    Original     		PDF SiHB22N60S O-263) 2002/95/EC 18-Jul-08 SiHB22N60S-E3

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Untitled

    Abstract: No abstract text available
    Text: SiHG22N 6 0 S, SiHP22N 6 0 S, SiHB22N 6 0 S, SiHF22N 6 0 S Super Junction Technology in TO-220, TO-247, TO-220F, and TO-263 Packages Key Benefits • • • • • • • • • • • Dramatic reduction of maximum RDS on at VGS = 10 V: 0.190 Ω Ultra-low gate charge: Qg = 98 nC


    Original     		PDF SiHG22N SiHP22N SiHB22N SiHF22N O-220, O-247, O-220F, O-263 O-263)

    vo3120

    Abstract: igbt induction stove 40v diode 6260 thermal MSS1P3U SMPS Solar Battery chargers VO3150A military passive component Vishay MKP 1848 VO3150
    Text: Vishay Intertechnology, Inc. Super 12 Featured Products www.vishay.com/landingpage/super12/2010 S12 Super 12 Featured Products 597D and T97 Multi-Anode Tantalum Capacitors Industry’s First 75-V-Rated Tantalum Capacitors DrMOS 6x6 – SiC769 Industry-Best Power Density for Mainstream


    Original     		PDF com/landingpage/super12/2010 SiC769 VMN-MS6398-1002 vo3120 igbt induction stove 40v diode 6260 thermal MSS1P3U SMPS Solar Battery chargers VO3150A military passive component Vishay MKP 1848 VO3150