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    Vishay Siliconix SIHB22N60S-GE3

    MOSFET N-CH 600V 22A D2PAK
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    Vishay Siliconix SIHB22N60SGE3

    POWER MOSFET Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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    SIHB22N60SGE3 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIHB22N60S-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V TO263 Original PDF

    SIHB22N60SGE3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    0949

    Abstract: SiHB22N60S-E3
    Text: SiHB22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Halogen-free According to IEC 61249-2-21 Definition 650 RDS(on) () VGS = 10 V 0.190 Qg (Max.) (nC) 98 Qgs (nC) 17 Qgd (nC) 25 Configuration • High EAR Capability


    Original     		PDF SiHB22N60S O-263) 2002/95/EC 11-Mar-11 0949 SiHB22N60S-E3

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V RDS(on) max. at 25 °C () • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg


    Original     		PDF SiHB22N60S O-263) 2002/95/EC 11-Mar-11

    SIHB22N60S

    Abstract: No abstract text available
    Text: SiHB22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V RDS(on) max. at 25 °C () • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg


    Original     		PDF SiHB22N60S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SIHB22N60S

    Abstract: No abstract text available
    Text: SiHB22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V • Generation one 650 RDS(on) max. at 25 °C (Ω) VGS = 10 V • High EAR capability 0.190 Qg max. (nC) 98 • Lower figure-of-merit Ron x Qg Qgs (nC)


    Original     		PDF SiHB22N60S O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sihb22n60sge3

    Abstract: SIHB22N60S
    Text: SiHB22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V RDS(on) max. at 25 °C () • Generation One • Halogen-free According to IEC 61249-2-21 Definition • High EAR Capability • Lower Figure-of-Merit Ron x Qg


    Original     		PDF SiHB22N60S O-263) 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 sihb22n60sge3

    SiHB22N60S-E3

    Abstract: SIHB22N60S
    Text: SiHB22N60S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS at TJ max. V RDS(on) () • Halogen-free According to IEC 61249-2-21 Definition 650 VGS = 10 V Qg (Max.) (nC) 0.190 • High EAR Capability 98 Qgs (nC) 17 Qgd (nC) 25 Configuration


    Original     		PDF SiHB22N60S O-263) 2002/95/EC 18-Jul-08 SiHB22N60S-E3