Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIHB22N60E Search Results

    SF Impression Pixel

    SIHB22N60E Price and Stock

    Vishay Siliconix SIHB22N60ET1-GE3

    MOSFET N-CH 600V 21A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHB22N60ET1-GE3 Cut Tape 535 1
    • 1 $3.43
    • 10 $2.876
    • 100 $2.327
    • 1000 $2.327
    • 10000 $2.327
    		Buy Now
    SIHB22N60ET1-GE3 Digi-Reel 1
    • 1 $3.43
    • 10 $2.876
    • 100 $2.327
    • 1000 $2.327
    • 10000 $2.327
    		Buy Now
    SIHB22N60ET1-GE3 Reel 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.06848
    • 10000 $1.6
    		Buy Now
    New Advantage Corporation SIHB22N60ET1-GE3 1,600 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.67
    • 10000 $3.43
    		Buy Now

    Vishay Siliconix SIHB22N60E-E3

    MOSFET N-CH 600V 21A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHB22N60E-E3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $2.04788
    • 10000 $2.04788
    		Buy Now

    Vishay Siliconix SIHB22N60E-GE3

    MOSFET N-CH 600V 21A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHB22N60E-GE3 Tube 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.85403
    • 10000 $1.85403
    		Buy Now

    Vishay Siliconix SIHB22N60EF-GE3

    MOSFET N-CH 600V 19A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHB22N60EF-GE3 Bulk 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.63506
    • 10000 $1.63506
    		Buy Now

    Vishay Siliconix SIHB22N60EL-GE3

    MOSFET N-CH 600V 21A TO263
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHB22N60EL-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $2.08464
    		Buy Now
    Find more SIHB22N60E price and stock on Findchips.com

    SIHB22N60E Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIHB22N60E-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A D2PAK Original PDF
    SIHB22N60EF-GE3 Vishay Siliconix MOSFET N-CH 600V 19A D2PAK Original PDF
    SIHB22N60E-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 21A D2PAK Original PDF
    SIHB22N60EL-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO263 Original PDF
    SIHB22N60ET1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO263 Original PDF
    SIHB22N60ET5-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 21A TO263 Original PDF

    SIHB22N60E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHB22N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHB22N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    s13050

    Abstract: S-1305
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHB22N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 s13050 S-1305

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)


    Original     		PDF SiHB22N60E O-263) 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.18 86 Qgs (nC) 11 Qgd (nC) 24 Configuration Single D D2PAK (TO-263)


    Original     		PDF SiHB22N60E O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiHB22N60E 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60EL_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiHB22N60EL AN609, 7589u 6282m 6682m 0918u 03-Nov-14

    D2Pak Package dimensions

    Abstract: No abstract text available
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C (Ω) • Halogen-free According to IEC 61249-2-21 Definition • Low Figure-of-Merit (FOM) Ron x Qg • Low Input Capacitance (Ciss)


    Original     		PDF SiHB22N60E O-263) 2002/95/EC 11-Mar-11 D2Pak Package dimensions

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHB22N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • 650 VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single Low Figure-of-Merit (FOM) Ron x Qg


    Original     		PDF SiHB22N60E O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) max. at 25 °C () • • • • • • • 650 VGS = 10 V 0.18 Qg max. (nC) 86 Qgs (nC) 14 Qgd (nC) 26 Configuration Single D Generation Two


    Original     		PDF SiHB22N60E 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SiHB22N60EL www.vishay.com Vishay Siliconix EL Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. RDS(on) typ. at 25 °C (Ω) • • • • • • 650 VGS = 10 V Qg max. (nC) 0.171 74 Qgs (nC) 15 Qgd (nC) 15 Configuration Single Reduced figure-of-merit (FOM) Ron x Qg


    Original     		PDF SiHB22N60EL 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TO-247 FULLPAK Package

    Abstract: SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 30 % Reduction in Specific On-Resistance I INNOVAT AND TEC O L OGY E Series N HN HIGH-VOLTAGE POWER MOSFETs O 19 62-2012 600 V and 650 V High-Performance MOSFETs E Series 600 V and 650 V, Super Junction N-Channel Power MOSFETs with a 30 % Reduction


    Original     		PDF enerTO-247 O-247 O-220 PAK/TO-263 VMN-PT0273-1208 TO-247 FULLPAK Package SIHG73N60 SiHF22N60 SIHG22N60E solar pv SIHG24N65 sihg47n60 SiHF7N60E

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Alternative Energy Solar One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Alternative Energy 太陽光発電 Mメインインバータ < 50 kW 4 マイクロインバータ 5


    Original     		PDF VMN-MS6792-1304-AESO

    MKP1848S

    Abstract: MKP1848S DC-Link
    Text: Vishay Intertechnology, Inc. Alternative Energy Solar One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Alternative Energy Solar Main Inverters < 50 kW 4 Micro-Inverters 5 Junction Boxes 6 The Engineer’s Toolbox highlights, by market application, some innovative components Vishay


    Original     		PDF VMN-MS6761-1212 MKP1848S MKP1848S DC-Link