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    SIEMENS IGBT 75A Search Results

    SIEMENS IGBT 75A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    SIEMENS IGBT 75A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    siemens rectifier pwm igbt

    Abstract: single phase igbt based inverter 200 amps circuit 0.5 hp 3-PHASE induction motor single phase ac voltage controller with igbts make three phase inverter powersystems siemens igbt inverters design sine wave power inverter single phase input basic electronic components rectifier, inverter ECONOPACK
    Text: Powersystems World `96 Conference, PCIM, September 7-13,1996, Las Vegas. A new compact inverter concept with low profile solderable ECONOPACK modules by M. Feldvoß 1 , G. Miller (1), Jeff Reichard (2) (1) Siemens AG, Semiconductor Group, Balanstr. 73, D-81617 Munich, Germany


    Original     		PDF D-81617 siemens rectifier pwm igbt single phase igbt based inverter 200 amps circuit 0.5 hp 3-PHASE induction motor single phase ac voltage controller with igbts make three phase inverter powersystems siemens igbt inverters design sine wave power inverter single phase input basic electronic components rectifier, inverter ECONOPACK

    BSM20GP60

    Abstract: BSM10GD60DL BSM15GD BSM150GB60DN2 BSM10GP60 BSM15GP60 BSM30GP60 BSM50GD60DN2 BSM150GD60DN2 BSM400GB60DN2
    Text: European Power Semiconducctor and Electronics Company GmbH + Co. KG 600V IGBT modules reach new levels of efficiency for power electronics applications. By Andreas Karl, 1998 Existing and newly evolving markets and applications for power electronics are challenging electronics manufacturers


    Original     		PDF BSM10GP60 BSM10GD60DL BSM15GP60 BSM15GD60DL BSM20GP60 BSM20GD60DL BSM30GP60 BSM30GD60DL BSM50GD60DL BSM75GD60DL BSM20GP60 BSM10GD60DL BSM15GD BSM150GB60DN2 BSM10GP60 BSM15GP60 BSM30GP60 BSM50GD60DN2 BSM150GD60DN2 BSM400GB60DN2

    IGBT motor DRIVER SCHEMATIC hcpl

    Abstract: siemens sinamics igbt chip siemens igbt inverters 5kw inverter schematic IGBT Power Module siemens ag advantage and disadvantage of igbt IGBT DRIVER SCHEMATIC 3 PHASE SCHEMATIC 5kw power supply 30A FS75R12KE3_B3 SINAMICS S120
    Text: Current Shunt Resistors integrated in IGBT Power Modules for Medium Power Drive Application M. Hornkamp1, R.Tschirbs1 1 eupec GmbH, Max-Planck-Straße 5, D-59581 Warstein, Michael.Hornkamp@eupec.com , Tel.: +49- 0 2902-764-1159 Current sensors are required to measure an electric current in an output phase of an


    Original     		PDF D-59581 FS75R12KE3 FS100R12KE3 FS150R12KE3 5966-0001E IGBT motor DRIVER SCHEMATIC hcpl siemens sinamics igbt chip siemens igbt inverters 5kw inverter schematic IGBT Power Module siemens ag advantage and disadvantage of igbt IGBT DRIVER SCHEMATIC 3 PHASE SCHEMATIC 5kw power supply 30A FS75R12KE3_B3 SINAMICS S120

    2ed020i12

    Abstract: SIEMENS THYRISTOR SCR 2146 fast thyristor 200A bridge rectifier gate control UPS SIEMENS 15 kva iran 2ED300C17 UPS design B133-H9107-G1-X-7600 SMPS INVERTER FULL BRIDGE FOR WELDING
    Text: High Power Semiconductors for Industrial Applications Best-in-class products to meet your application demands w w w. i n f i n e o n . c o m / p o w e r s e m i c o n d u c t o r s EasyPIM , EasyPACK EconoPIM™, EconoPACK™ The easy way with compact modules


    Original     		PDF B133-H9107-G1-X-7600 2ed020i12 SIEMENS THYRISTOR SCR 2146 fast thyristor 200A bridge rectifier gate control UPS SIEMENS 15 kva iran 2ED300C17 UPS design B133-H9107-G1-X-7600 SMPS INVERTER FULL BRIDGE FOR WELDING

    ixgh40n60c2d1

    Abstract: IXGT40N60C2D1 PDF IXYS IXGH40N60C2D1 IXGJ40N60C2D1 IXGH40N60C2 a200g
    Text: IXGH40N60C2D1 IXGT40N60C2D1 IXGJ40N60C2D1 HiPerFASTTM IGBT with Diode VCES IC25 = = VCE SAT ≤ tfi(typ) = 600V 75A 2.7V 32ns C2-Class High Speed IGBTs TO-247(IXGH) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGH40N60C2D1 IXGT40N60C2D1 IXGJ40N60C2D1 O-247 O-268 IC110 ixgh40n60c2d1 IXGT40N60C2D1 PDF IXYS IXGH40N60C2D1 IXGJ40N60C2D1 IXGH40N60C2 a200g

    375A1

    Abstract: IXXH75N60C3
    Text: Advance Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60C3 IC110 O-247 062in. 75N60C3 375A1 IXXH75N60C3

    75N60B3D1

    Abstract: IXXH75N60B3
    Text: Advance Technical Information IXXH75N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60B3 IC110 125ns O-247 062in. 75N60B3D1 IXXH75N60B3

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60C3 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IC110 IXXH75N60C3 O-247 Non60 75N60C3

    75N60B3D1

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60B3 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IC110 IXXH75N60B3 125ns O-247 75N60B3D1

    75n60

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.3V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60C3 IC110 O-247 062in. 75N60C3 75n60

    150-A54

    Abstract: No abstract text available
    Text: IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.3V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ


    Original     		PDF IXXH75N60C3D1 IC110 O-247 IF110 062in. 75N60C3 150-A54

    3rd Generation of 1200V IGBT Modules

    Abstract: transorb 200v transorb diode igbt failure infineon technologies formerly siemens siemens igbt infineon igbt3 1200v IGBT infineon IGBT structure infineon igbt3 ohm
    Text: 3rd Generation of 1200V IGBT Modules M. Hierholzer, Th. Laska, M. Münzer, F. Pfirsch, C. Schäffer, Th. Schmidt IGBT-modules are the most frequently used semiconductors for power applications. The markets demand for higher power integration in one module is limited by the chip losses and the housings


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information XPTTM 650V IGBT GenX3TM w/ Sonic Diode IXYH75N65C3H1 VCES = IC110 = VCE sat  tfi(typ) = 650V 75A 2.3V 50ns Extreme Light Punch through IGBT for 20-60kHz Switching TO-247 AD Symbol Test Conditions Maximum Ratings VCES


    Original     		PDF IXYH75N65C3H1 IC110 20-60kHz O-247 IF110 75N65C3 71-R47)

    Coreless pcb transformer

    Abstract: sinamics s120 igbt transformer driver igbt 1000v 30a driver igbt SIEMENS IGBT 788J IGBT 1000V 100A 2ed020i12 FS75R12KE3_B3
    Text: 为中功率驱动应用内置电流取样电阻的 IGBT 功率模块 M. Hornkamp1, R.Tschirbs1 1 eupec GmbH, Max-Planck-Straße 5, D-59581 Warstein, Michael.Hornkamp@eupec.com , Tel.: +49- 0 2902-764-1159 测量 IGBT 逆变器的输出相电流需用电流传感器。按 IGBT 逆变器输出功率的不同，目


    Original     		PDF D-59581 ppm/106 10nH10m 3900ppm/K FS75R12KE3 FS100R12KE3 FS150R12KE3 5966-0001E Coreless pcb transformer sinamics s120 igbt transformer driver igbt 1000v 30a driver igbt SIEMENS IGBT 788J IGBT 1000V 100A 2ed020i12 FS75R12KE3_B3

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		PDF IC110 IXXH75N60B3D1 125ns O-247 IF110 75N60B3

    150-A54

    Abstract: No abstract text available
    Text: Advance Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60C3D1 IC110 O-247 IF110 062in. 75N60C3 150-A54

    IXXH75N60C3D1

    Abstract: 75N60C3
    Text: Preliminary Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60C3D1 IC110 O-247 IF110 062in. 75N60C3 IXXH75N60C3D1

    75N60

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		PDF IXXH75N60B3D1 IC110 125ns O-247 IF110 062in. 75N60B3 75N60

    75N60B3

    Abstract: IXXH75N60B3D1 75n60
    Text: Advance Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		PDF IXXH75N60B3D1 IC110 125ns O-247 IF110 062in. 75N60B3 IXXH75N60B3D1 75n60

    75N250

    Abstract: IXGK75N250 IXGX75N250 IXGk 75N250 PLUS247 B2493-1 123B16
    Text: High Voltage IGBT For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = 2500V IC110 = 75A VCE sat ≤ 2.3V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES


    Original     		PDF IXGK75N250 IXGX75N250 IC110 O-264 75N250 10-12-09-C IXGK75N250 IXGX75N250 IXGk 75N250 PLUS247 B2493-1 123B16

    60N60C2

    Abstract: ixgh60n60c2
    Text: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions VCES IC25 VCE sat tfi typ IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20


    Original     		PDF 60N60C2 IC110 O-247 O-268 728B1 123B1 728B1 065B1 60N60C2 ixgh60n60c2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data HiPerFASTTM IGBT C2-Class High Speed IGBTs Symbol Test Conditions IXGH 60N60C2 IXGT 60N60C2 Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original     		PDF 60N60C2 IC110 O-247 O-268 728B1 123B1 728B1 065B1

    IXGQ150N33TC

    Abstract: IXGQ150N33TCD1 siemens igbt 75a IXGA150N33TC g150n IXGA150 IXGQ150
    Text: IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 Trench Gate High Speed IGBT VCES = ICP = VCE sat ≤ 330V 400A 1.8V For PDP Applications 150N33TC 150N33TCD1 TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 330 V VGEM Transient ± 30


    Original     		PDF IXGA150N33TC IXGQ150N33TC IXGQ150N33TCD1 150N33TC 150N33TCD1 O-263 150N33TC 9-04-08-B IXGQ150N33TC IXGQ150N33TCD1 siemens igbt 75a IXGA150N33TC g150n IXGA150 IXGQ150

    IXXR110N60B4H1

    Abstract: No abstract text available
    Text: Advance Technical Information IXXR110N60B4H1 XPTTM 600V GenX4TM w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = ≤ = 600V 75A 2.0V 27ns Extreme Light Punch Through IGBT for 5-30kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings


    Original     		PDF 5-30kHz IC110 IXXR110N60B4H1 ISOPLUS247TM 110N60B4 IXXR110N60B4H1