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    IXGX75N250 Price and Stock

    IXYS Corporation IXGX75N250

    IGBT 2500V 170A 780W PLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGX75N250 Tube 300
    • 1 -
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    • 100 -
    • 1000 $108.33047
    • 10000 $108.33047
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    TTI IXGX75N250 Tube 300
    • 1 -
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    • 100 -
    • 1000 $143.01
    • 10000 $143.01
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    Littelfuse Inc IXGX75N250

    Disc Igbt Npt-Very Hi Voltage To-247Ad/ Tube |Littelfuse IXGX75N250
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXGX75N250 Bulk 300
    • 1 -
    • 10 -
    • 100 $112.41
    • 1000 $112.41
    • 10000 $112.41
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    IXYS Integrated Circuits Division IXGX75N250

    IGBT DIS.SINGLE 75A 2500V H.VOLTAGE PLUS247 THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXGX75N250
    • 1 $193.08954
    • 10 $193.08954
    • 100 $183.8948
    • 1000 $183.8948
    • 10000 $183.8948
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    IXGX75N250 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXGX75N250 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 2500V 170A 780W PLUS247 Original PDF

    IXGX75N250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75N250

    Abstract: IXGK75N250 IXGX75N250 IXGk 75N250 PLUS247 B2493-1 123B16
    Text: High Voltage IGBT For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = 2500V IC110 = 75A VCE sat ≤ 2.3V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 2500 V VGES


    Original     		PDF IXGK75N250 IXGX75N250 IC110 O-264 75N250 10-12-09-C IXGK75N250 IXGX75N250 IXGk 75N250 PLUS247 B2493-1 123B16

    IXGk 75N250

    Abstract: IXGK75N250 IXGX75N250 75N250 Plus PLUS247
    Text: Preliminary Technical Information High Voltage IGBTs For Capacitor Discharge Applications IXGK75N250 IXGX75N250 VCES = 2500V IC110 = 75A VCE sat ≤ 2.7V TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGK75N250 IXGX75N250 IC110 O-264 75N250 IXGk 75N250 IXGK75N250 IXGX75N250 Plus PLUS247

    IXGK75N250

    Abstract: Plus PLUS247
    Text: Preliminary Technical Information IXGK75N250 IXGX75N250 High Voltage IGBT For Capacitor Discharge Applications VCES = 2500 V IC25 = 180 A VCE sat ≤ 2.3 V Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ


    Original     		PDF IXGK75N250 IXGX75N250 IC110 75N250 IXGK75N250 Plus PLUS247

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage IGBTs VCES = 2500V IC110 = 75A VCE sat ≤ 2.7V IXGK75N250 IXGX75N250 For Capacitor Discharge Applications TO-264 (IXGK) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 2500 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXGK75N250 IXGX75N250 O-264 75N250

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


    Original     		PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250