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    SICTE Datasheets Context Search

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    SICTE-5

    Abstract: No abstract text available
    Text: SICTE5 Diodes Unidirectional Transient Suppressor Military/High-RelN Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage6.0 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage5.0 I(PPM) Max.(A)Pk.Pulse Current160


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    PDF Current160 StyleAxial-10 SICTE-5

    ic MB 16651 G

    Abstract: MB 16651 MPC860 jtag tdm RECEIVER 221-217 0xE302 oscillator 10ppm MB 16651 G DS3-M13 V 22916
    Text: Preliminary Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. M29320 12-Port DS3/E3/STS-1 Electrical Integrated Line Termination Device for Transport Networks


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    PDF M29320 12-Port M29320 29320-DSH-001-D ic MB 16651 G MB 16651 MPC860 jtag tdm RECEIVER 221-217 0xE302 oscillator 10ppm MB 16651 G DS3-M13 V 22916

    1.5KE400P

    Abstract: 3A143 P6KE400P SMA4T39 P6KE39CP P6KE200A equivalent tvs505 equivalent TTS144 P6KE27P P6KE12CP
    Text: CROSS REFERENCE PROTECTION DEVICES INDUSTRY STANDARD 1SMA5.0AT3 ↓ 1SMA78AT3 1SMB5.0AT3 ↓ 1SMB170AT3 1SMB5.0CAT3 ↓ 1SMB78CAT3 1SMC5.0AT3 ↓ 1SMC78AT3 1.0KE5.0,A ↓ 1.0KE170P,A 1.0KE5.0C,CA ↓ 1.0KE170C,CA 1.2KE5.0,A ↓ 1.2KE170,A 1.2KE5.0C,CA ↓


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    PDF 1SMA78AT3 1SMB170AT3 1SMB78CAT3 1SMC78AT3 0KE170P 0KE170C 2KE170 2KE170C 4KESD160 4KESD160C 1.5KE400P 3A143 P6KE400P SMA4T39 P6KE39CP P6KE200A equivalent tvs505 equivalent TTS144 P6KE27P P6KE12CP

    ic MB 16651 G

    Abstract: MB 16651 G MB 16651 tdm RECEIVER 221-217 DS3-M23 MPC860 jtag 29320-DSH-001-C DATASHEET OF BS 107A DS3-M13
    Text: Preliminary Information This document contains information on a product under development. The parametric information contains target parameters that are subject to change. M29320 12-Port DS3/E3/STS-1 Electrical Integrated Line Termination Device for Transport Networks


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    PDF M29320 12-Port M29320 29320-DSH-001-C ic MB 16651 G MB 16651 G MB 16651 tdm RECEIVER 221-217 DS3-M23 MPC860 jtag 29320-DSH-001-C DATASHEET OF BS 107A DS3-M13

    GPL06724

    Abstract: T670
    Text: BLUE LINETM TOPLED LB T670 Besondere Merkmale Gehäusebauform: P-LCC-2 Gehäusefarbe: weiß als optischer Indikator einsetzbar zur Hinterleuchtung, Lichtleiter- und Linseneinkopplung in SiC-Technologie gefertigt in der Spektroskopie einsetzbar für alle SMT-Bestück- und Löttechniken geeignet


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    PDF VPL06724 GPL06724 GPL06724 T670

    600w class d circuit diagram schematics

    Abstract: TM 1628 IC SCHEMATICS DIAGRAM P6KE200A equivalent 30F126 AP6KE300CA diode P6KE 100 A TISPA79R241 SMBJ40A/CA-TR ZP1400 1SMB5.0CAT3
    Text: ASD and Discrete Products PROTECTION Devices and IPADs™ Improving the Immunity of your System Designer’s Selection Guide USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED. STMicroelectronics PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL


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    PDF SGPROTECT/1001 600w class d circuit diagram schematics TM 1628 IC SCHEMATICS DIAGRAM P6KE200A equivalent 30F126 AP6KE300CA diode P6KE 100 A TISPA79R241 SMBJ40A/CA-TR ZP1400 1SMB5.0CAT3

    SICTE-5

    Abstract: sicte5 SICTE15 SICTE12 SICTE36 SICTE-18 SMPTE-22 sicte in6373 SICTE15C
    Text: 1.5 KW EPOXY CASE-C4 TRANSIENT SUPPRESSORS ELECTRICAL CHARACTERISTICS at 25 C SICTE, SIMPTE & IN6373 - IN6389 SERIES (5.0 TO 45 VOLTS) FEATURES: DESCRIPTION . a high quality suppressorfor use in commercial appli­ cations where large voltage transients can permanently


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    PDF IN6373 IN6389 SICTE-10C SICTE-12C SICTE-15C SICTE-18C SMPTE-10C SMPTE-12C SMPTE-15C SMPTE-18C SICTE-5 sicte5 SICTE15 SICTE12 SICTE36 SICTE-18 SMPTE-22 sicte SICTE15C

    SICTE15

    Abstract: sicte36 SICTE-10 SICTE18
    Text: 1.5 KW EPOXY CASE-C4 TRANSIENT SUPPRESSORS ELECTRICAL CHARACTERISTICS at 25 C SICTE, SIMPTE & IN6373 - IN6389 SERIES (5.0 TO 45 VOLTS) FEATURES: DESCRIPTION . a high quality suppressor for use in commercial appli­ cations where large voltage transients can permanently


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    PDF IN6373 IN6389 SICTE-10C SICTE-12C SICTE-15C SICTE-18C SMPTE-10C SMPTE-12C SMPTE-15C SMPTE-18C SICTE15 sicte36 SICTE-10 SICTE18

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NEZ1414-4E 4 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NEZ1414-4E is power GaAs FET which provides high gain, high efficiency and high output power in Ku-band. The internal input and output matching enables guaran­


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    PDF NEZ1414-4E NEZ1414-4E

    SICTE-12

    Abstract: SICTE12
    Text: SENICON COMPONENTS EÒE INC Ö13S1S7 D 000DÔ07 4 r-//-Ä 3 OXY CASE-C4 TRANSIENT SUPPRESSOR! CTRICAL CHARACTERISTICS at 25 C . "'?!iS ^ 1 5 ¿Slfl s<vfe^a?§; 'ÌMllli?: PTE & IN6373 - IN6389 SERIES 5.0 TO 45 VOLTS) FEATURES: DESCRIPTION . a high quality suppressor for use in commercial appli­


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    PDF 13S1S7 IN6373 IN6389 Bi1N6382 1N6383 1N6384 1N6385 1N6386 SICTE-22C SMPTE-22C SICTE-12 SICTE12

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BLUE LINE 3 mm T1 LED LB 3331 Vorläufige Daten / Preliminary Data Besondere Merkmale • • • • • • • klares, farbloses 3-mm Kunststoffgehäuse als optischer Indikator einsetzbar in SiC-Technologie gefertigt in der Spektroskopie einsetzbar


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    PDF S23SbOS

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The PACKAGE DIMENSIONS UNIT: mm NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal


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    PDF NES2527B-30

    gaas fet T79

    Abstract: ES182
    Text: PRELIMINARY DATA SHEET_ 30 W L-BAND POWER GaAs MESFET OUTLINE DIMENSIONS FEATURES_ NE81K1M0 Units n mm • CLASS A OR AB OPERATION P A C K A G E OUTLINE T-79 • HIGH OUTPUT POWER • HIGH GAIN • HIGH POWER ADDED EFFICIENCY


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    PDF NE81K1M0 ES1821B-30 24-Hour gaas fet T79 ES182

    M66271FP

    Abstract: M6627
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


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    PDF M66271FP M66271FP M6627

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BLUE LINE* 5 mm T i % } LED LB 5410 Vorläufige Daten / Preliminary Data Besondere Merkmale • • Klares, farbloses Ü-mm Kunsfetcifgehäuie als o piis^io r ^!>däkatoi einsehbar • -n SiC-Te^hr.ologie ge! artig? • n der Spektroskopie e rse tzb a r


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    PDF 4C33S S410-GOdiation

    Untitled

    Abstract: No abstract text available
    Text: 77 WS128K32-25G2SMX M/HITE /MICROELECTRONICS 128Kx32 Radiation Hardened SRAM MODULE ADVANCED* FEATURES • A c c ess T im e of 25ns O rg an ize d as 12 8 K x3 2 ; U se r C o n fig u ra b le as 2 5 6 K x 1 6 or ■ 5 1 2Kx8 R a d ia tio n T o le ra n t • T o t a l Dose H ard ness th ro u g h 1 x1 0 6 rad S i02


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    PDF WS128K32-25G2SMX 128Kx32 14crrv2 128KX32

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION GaAs MES FET NEZ1011-8E 8 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm T h e N E Z 1 0 1 1 -8 E is p o w e r G aA s F ET w hich p ro vid e s high gain, high e fficie n cy and high o u tp u t po w e r in K u-band.


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    PDF NEZ1011-8E

    VEB Keramische Werke

    Abstract: keramische Werke Hermsdorf halbleiterwerk ddr veb varistor sv Halbleiter Bauelemente der DDR dungs ddr bauelemente hermsdorf bauelemente DDR
    Text: V-5-1 720/62 Ag 71/158/62 Halb fßff&rm /ior r5-1ä r?de 2. Die SV-Typen Varistoren Ausgabe Janu ar 1962 Abbildungen und Werte gelten nur bedingt als Unterlagen für Bestellungen. Rechtsverbindlich ist jeweils die Auftragsbestätigung. Änderungen Vorbehalten!


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    Y8101

    Abstract: Fluke 179 Multimeter circuit diagram FLUKE 79 series II multimeter diagram Fluke 19 Multimeter circuit diagram fluke 8012A fluke Y8101 FLUKE Clamp meter diagram FLUKE 8010a rms dc converter FLUKE 30 Clamp meter diagram FLUKE 79 III manual
    Text: 8010A/8012A Digital Multimeters Instruction Manual FLUKE 8010A/8012A Digital Multimeters Instruction Manual P/N 491944 August 1978 Rev 2 1/85 1985, John Fluke Mfg. Co., Inc. All rights reserved. Litho in U.S.A. IF L U K E I - — ® Dear Customer: Congratulations! We at Fluke are proud to present you with the 8010A and


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    PDF 010A/8012A 012A-1701 012A-1101 Y8101 Fluke 179 Multimeter circuit diagram FLUKE 79 series II multimeter diagram Fluke 19 Multimeter circuit diagram fluke 8012A fluke Y8101 FLUKE Clamp meter diagram FLUKE 8010a rms dc converter FLUKE 30 Clamp meter diagram FLUKE 79 III manual

    1N5135

    Abstract: SICTE-5 1N4564 SICT-45 SUES110G P6SE6.8 1N5959 1N2370B 1N4538
    Text: PRODUCT LISTINGS d e v ic e p ag e d e v ic e 1N248B. 55 1N249B. 55 1N250B. 55 1N253 thru.50


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    PDF 1N248B. 1N249B. 1N250B. 1N253 1N256 1N332 1N349 1N550 1N555 1N562. 1N5135 SICTE-5 1N4564 SICT-45 SUES110G P6SE6.8 1N5959 1N2370B 1N4538

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY PRODUCT INFORMATION GaAs MES FET NEZ1414-8E 8 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm T h e N E Z 1 4 1 4 -8 E is p o w e r G aA s F ET w hich p ro vid e s high gain, high e fficie n cy and high o u tp u t po w e r in K u-band.


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    PDF NEZ1414-8E

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET GaAs MES FET NES1821B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The N E S 1 82 1B -3 0 is p o w e r G aA s FET w h ich provides high o u tp u t p o w e r and high gain in the 1.8-2.1


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    PDF NES1821B-30

    NEC 426

    Abstract: NES1417B-30
    Text: PRELIMINARY DATA SHEET GaAs MES FET NES1417B-30 30W L-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The N E S 1 41 7B -3 0 is p o w e r G aA s FET w h ich provides high o u tp u t p o w e r and high gain in the 1.4-1.7G H z


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    PDF NES1417B-30 NES1417B-30 NEC 426

    SPS-181C

    Abstract: SPS-189C SPS-235C SPS-281C SPS-289C SPS-135C SPS289 sps28 SPS2 S-181C
    Text: Phototransistor Phototransistor typical characteristics 7 * S •Bs B P ow er dissipation ï - v £<f c * 9 # * * S t o • Â # îfiia f to < M ^ È t o Fig. 2,3) - ^ Y ÿ 'y 'J 7 ^ n u \ y s s v > iO X , V ^ 7 \ <£*)*% • Îiln l^ t É <£<9 ÏF g S ifc - J S B IiS J Îfê 'îi ( P c -T a )


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    PDF 700nmi SPS-181C \SPS-189C, SPS-1118Cj SPS-1118C Si02ll SPS-D35C SPS-D81C SPS-D89C SPS-1118C SPS-181C SPS-189C SPS-235C SPS-281C SPS-289C SPS-135C SPS289 sps28 SPS2 S-181C