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    IN6389 Search Results

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    SICTE-5

    Abstract: sicte5 SICTE15 SICTE12 SICTE36 SICTE-18 SMPTE-22 sicte in6373 SICTE15C
    Text: 1.5 KW EPOXY CASE-C4 TRANSIENT SUPPRESSORS ELECTRICAL CHARACTERISTICS at 25 C SICTE, SIMPTE & IN6373 - IN6389 SERIES (5.0 TO 45 VOLTS) FEATURES: DESCRIPTION . a high quality suppressorfor use in commercial appli­ cations where large voltage transients can permanently


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    PDF IN6373 IN6389 SICTE-10C SICTE-12C SICTE-15C SICTE-18C SMPTE-10C SMPTE-12C SMPTE-15C SMPTE-18C SICTE-5 sicte5 SICTE15 SICTE12 SICTE36 SICTE-18 SMPTE-22 sicte SICTE15C

    SICTE-12

    Abstract: SICTE12
    Text: SENICON COMPONENTS EÒE INC Ö13S1S7 D 000DÔ07 4 r-//-Ä 3 OXY CASE-C4 TRANSIENT SUPPRESSOR! CTRICAL CHARACTERISTICS at 25 C . "'?!iS ^ 1 5 ¿Slfl s<vfe^a?§; 'ÌMllli?: PTE & IN6373 - IN6389 SERIES 5.0 TO 45 VOLTS) FEATURES: DESCRIPTION . a high quality suppressor for use in commercial appli­


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    PDF 13S1S7 IN6373 IN6389 Bi1N6382 1N6383 1N6384 1N6385 1N6386 SICTE-22C SMPTE-22C SICTE-12 SICTE12

    in6373

    Abstract: in6383 IN6376 in6385 IN6382 IN6374 IN6384 IN6388 IN6389 in6377
    Text: MicroísemiCorp. f The dtoae experts SANTA ANA, CA SCOTTSDALE, AZ For more inform ation call: 602 941-6300 FEATURES • DESIGNED TO PR O T EC T BIPOLAR AND MOS M ICROPROCESSOR BASED S Y S T E M S FROM IN6373 thru IN6389 and M PTE-5 thru M PTE-45C TRANSIENT


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    PDF IN6373 IN6389 PTE-45C 12seconds in6383 IN6376 in6385 IN6382 IN6374 IN6384 IN6388 in6377

    SICTE15

    Abstract: sicte36 SICTE-10 SICTE18
    Text: 1.5 KW EPOXY CASE-C4 TRANSIENT SUPPRESSORS ELECTRICAL CHARACTERISTICS at 25 C SICTE, SIMPTE & IN6373 - IN6389 SERIES (5.0 TO 45 VOLTS) FEATURES: DESCRIPTION . a high quality suppressor for use in commercial appli­ cations where large voltage transients can permanently


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    PDF IN6373 IN6389 SICTE-10C SICTE-12C SICTE-15C SICTE-18C SMPTE-10C SMPTE-12C SMPTE-15C SMPTE-18C SICTE15 sicte36 SICTE-10 SICTE18

    IN6379

    Abstract: IN6376 IN6380 in6383 IN6375
    Text: SCOTTSDALE, A l For more information call: 602 941-6300 FEATURES • D ESIGNED TO P R O T E C T B IPO LAR A N D M OS M ICROPROCESSOR BASED S Y S T E M S FRO M IN 6389 and MPTE-5 thru MPTE-45C TRANSIENT ABSORPTION ZENER E L EC T R IC A L D IS TU R B A N C ES .


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    PDF MPTE-45C 10-9seconds IN6379 IN6376 IN6380 in6383 IN6375

    in6373

    Abstract: IN6377 in6376 in6385 IN6375 in6383 IN6382 IN6374 IN6384 IN6381
    Text: mcROSEni STE coRP D • kllSfltj5 O D G E O M T Microsemi Corp. d m * tm e rts SANTA ANA. CA SCOTTSDALE. A Z For more information call: 602 941-6300 FEA TU RES • DESIGNED TO PR O T EC T BIPOLAR AND MOS M ICROPROCESSOR BASED S Y S T E M S FROM fiT7^ ■


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    PDF IN6373 IN6389 MPTE-45C IN6377 in6376 in6385 IN6375 in6383 IN6382 IN6374 IN6384 IN6381