pj 989
Abstract: No abstract text available
Text: 47E J> m S23SbOS 0Q243GS S • S I E G 1^31-35 Silicon N Channel MOSFET Tetrode BF 989 _ SIEMENS AKTIENGESELLSCHAF • • _ For amplifier and mixer stages in UHF and VHF TV tuners Low input and output capacitance Type Marking Ordering code
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S23SbOS
0Q243GS
Q62702-F874
Q62702-F969
fi23Sb05
BF989
pj 989
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ABE 422
Abstract: Transistor BFR 37 ABE 027 bfr14 BFR 98 ABE 604 Transistor BFr 99 ABE 721
Text: asc » • S23SbOS QOOHbS? T H S I E G { NPN Silicon Microwave Transistor up to 2 GHz SIEMENS AKTIENGESELLSCHAF BFR 14 B - - BFR 14 B is an epitaxial NPN silicon planar microwave transistor in hermetically sealed metal ceramic 100 mil package similar to TO 120. Because of its low noise figure, high
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pac54
23Sb05
BFR14B
ABE 422
Transistor BFR 37
ABE 027
bfr14
BFR 98
ABE 604
Transistor BFr 99
ABE 721
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BF256
Abstract: BF 256 BF256C BF246 bf256b BF 246B BF 246 ELLS 110 BF246A BF246C
Text: 2SC D • S23SbOS Q Q tm tiH T « S I E Ö N-Channel Junction Field-Effect Transistors 25C 04-464SIEMENS AKTIENGESELLSCHAF D BF 246 A B F246B B F246C BF 24 6 A, B, and C are N-channel junction field-effect transistors in plastic package similar to TO 92 10 A 3 DIN 41868 . They are particularly suitable for RF amplifiers.
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023SbOS
BF246B
BF246C
Q62702-F219
Q62702-F393
Q62702-F254
Q62702-F250
127mm
BF256A
BF2S68
BF256
BF 256
BF256C
BF246
bf256b
BF 246B
BF 246
ELLS 110
BF246A
BF246C
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CU4032K275G
Abstract: CU4032K300G CU4032K30G CU4032K250G CU4032K40G CU4032K25G CU4032K14G CU4032K CU4032K11G CU4032K17G
Text: SIEMENS A K T I E N G E S E L L S C H A F bOE D • S23SbOS 0051405 346 « S I E Í SIEMENS SURFACE MOUNT METAL OXIDE VARISTORS ELECTRICA L SPECIFICATIONS CONTINUED MAXIMUM RATINGS (8 5 * C ) CONTINUOUS TR A N SIEN T A VER A G E AC PA RT NUMBER DC PO W ER
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00S140S
CU4032K11G
CU4032K14G
CU4032K17G
CU4032K20G
CU4032K25G
CU4032K30G
CU4032K50G
CU4032K60G
CU4032K75G
CU4032K275G
CU4032K300G
CU4032K250G
CU4032K40G
CU4032K
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4 pin hall sensor
Abstract: 4 pin package hall sensor 137 hall SENSOR MINIATURE CIRCUIT BREAKER siemens KSY14 hall effect sensor 4 pin A 02 hall effect sensor 3 PIN hall effect sensor 175 hall sensor hall effect sensor for current measurement
Text: SIEMENS Hall Position Sensor KSY 14 Features • • • • • • • • • High sensitivity High operating temperature Small linearity error Low offset voltage Low TC of sensitivity and internal resistance Ultra-flat plastic miniature package Low inductive zero component
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23SbDS
KSY14
S23SbOS
4 pin hall sensor
4 pin package hall sensor
137 hall SENSOR
MINIATURE CIRCUIT BREAKER siemens
KSY14
hall effect sensor 4 pin
A 02 hall effect sensor
3 PIN hall effect sensor
175 hall sensor
hall effect sensor for current measurement
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Transistor BFR 97
Abstract: bfr 49 transistor BFR34A
Text: SIEMENS BFR 34A NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz at collector currents from 1 mA to 20 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code BFR 34A BFR 34A Q62702-F346-S1
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Q62702-F346-S1
A23Sb05
D0b7270
Transistor BFR 97
bfr 49 transistor
BFR34A
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siemens ts 4140
Abstract: slma PEB2040 TS01S HSCC "digital switching system" TI344
Text: SIEMENS Memory Time Switch CMOS MTSC PEB 2045 PEF 2045 Preliminary Data 1 CMOS IC Features • Time/space switch for 2048-, 4096- or 8192-kbit/s PCM systems • Switching of up to 512 incoming PCM channels to up to 256 outgoing PCM channels • 16-input and 8-output PCM lines
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8192-kbit/s
16-input
8192-kHz
2048-kHz
0235b05
P-DIP-40
siemens ts 4140
slma
PEB2040
TS01S
HSCC
"digital switching system"
TI344
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Untitled
Abstract: No abstract text available
Text: SIEMENS ¿ ¿ ¿ ¿ : ^íííííííííííííííííííííííííí^íííííííííííííííííííííííí^íí: ^ ^ ^ ^ ^ ^ ^ ^ ^ íí? íí? ? í? ? ííí:á íííí? íí? í^ ííf í^ : íííííííííííííííííííííííííííííííííííííííí^^ííííífííííííí:
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G10404Ã
C509-L
A8-A15
A535bDS
235bD5
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Untitled
Abstract: No abstract text available
Text: fl2 3 S b 0 5 0 0 f ll0 7 f l ESO SIEMENS High-Performance 8-Bit CMOS Single-Chip Microcontroller SAB 80C515A / 83C515A-5 Preliminary SAB 83C515A-5 SAB 80C515A • • • • • • • • • • • • • • • • Microcontroller with factory mask-programmable ROM
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80C515A
83C515A-5
80C515A
83C515A-5,
83C515A-5
80C51
P-LCC-68
A23Sb05
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BD 649
Abstract: 2SC 645 TOP-66 BD 104 NPN darlington bd 645 BD 649/BD 650 BD647 BD 104 Q62702-D229 Q62901-B65
Text: 25C D • 0235bG5 0004307 7 ■ S I E û , NPN Silicon Darlington Transistors T - 3 3 -2 9 SIEMENS AKTIENfiESELLSCHAF ; ° ^ 387 BD 643 BD 645 BD 647 BD 649 ° Epibase p o w e r d arlin g to n transistors 6 2 .5 W BD 6 4 3 , BD 6 4 5 , BD 6 4 7 , and BD 6 4 9 are monolithic NPN silicon epibase power darlington
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fl23SLQS
T-33-29
OP-66)
643/BD
645/BD
BD647.
BD843,
BD645.
BD647,
BD 649
2SC 645
TOP-66
BD 104 NPN
darlington bd 645
BD 649/BD 650
BD647
BD 104
Q62702-D229
Q62901-B65
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BFQ70
Abstract: zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C Q62702-F774 VCE051S1 bfq 85 zo 107
Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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VCE051S1
Q62702-F774
fi23SbOS
0Gb7117
BFQ70
zo 107 NA
BFq 98
transistor zo 109
zo 107 MA
ST2C
VCE051S1
bfq 85
zo 107
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5117400BJ -50/-60/-70 HYB 5117400BT -50/-60/-70 Advanced Inform ation • • • • 4 194 304 w ords by 4-bit organization 0 to 70 "C operating temperature Fast access and cycle time RAS access time: 50 ns -50 version
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5117400BJ
5117400BT
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Untitled
Abstract: No abstract text available
Text: SIEMENS TV-Stereo Processor TDA 6812-5 Preliminary Data Bipolar IC rm TDA6812Features • High quality stereo signal processing • High S/N ratio • I2C Bus • Clipping detector and clock generator • NICAM or AM sound inputs • Volume control • Universal audio interface for DOLBY, EQUALIZER,
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TDA6812Features
Q67000-A5127
P-DIP-40-2
UED03424
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Untitled
Abstract: No abstract text available
Text: SIEMENS 2M X 8-Bit Dynamic RAM HYB 5117800BSJ-50/-60/-70 Advanced Inform ation • • • • 2 097 152 w ords by 8-bit organization 0 to 70 "C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version) 70 ns (-70 version)
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5117800BSJ-50/-60/-70
fiE35LD5
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MSC SDA
Abstract: SDA9092 DS011 DD011
Text: 1 -5 2 S IE H E N S A K T IE N G E S E LLS C H A F S IE D • fl2 3 S b G 5 QOMMSET 2 4 5 « S I E G SIEMENS Memory Output Interface SDA 9092 Preliminary Data MOS 1C Type Ordering code Package SDA 9092 Q67100-H8353 PL-CC-68 In conjunction with the integrated circuits MIIF Memory Input Interface MSC (Memory
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PL-CC-68
Q67100-H8353
535b05
MSC SDA
SDA9092
DS011
DD011
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Siemens PEB 2040
Abstract: Siemens PEB 2045 TS127 08 PLCC-40 CDIP40 D55A PEB2045 P 30B4 PL-CC-44 tsco4
Text: SIEMENS AKTIEN6ESELLSCHAF 47E D • S IE M E N S 623SbDS 0035^31 5 ■ ISIEG -T -7 5 -//' Memory Time Switch CMOS MTSC Preliminary Data PEB 2045 PEF 2045 CMOS 1C Type Ordering Code Package PEB 2045 P PEB 2045 C PEB 2045 N PEF 2045 P PEF 2045 C PEF 2046 N
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623SbDS
75-/h2t
Q67100-H8322
P-DIP-40
Q67100-H8323
C-DIP-40
Q67100-H8602
PL-CC-44
Q67100-H6056
Siemens PEB 2040
Siemens PEB 2045
TS127 08
PLCC-40
CDIP40
D55A
PEB2045 P
30B4
PL-CC-44
tsco4
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Untitled
Abstract: No abstract text available
Text: LH1521, LH1523 SIEMENS Dual 1 Form B Absolute M axim um Ratings Ta =25°C Stresses in excess of the Absolute M aximum Ratings can cause perm anent dam age to the device. These are absolute stress ratings only. Functional operation of the Symbol Test Conditions
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LH1521,
LH1523
LH1521
18-pln
fl535t
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DL 1416B
Abstract: 1416B garry DIP SOCKET garry socket dishwasher siemens siemens schematic codes DL1416B SN63 TP35 AN8080
Text: SIEMENS AKTIENGESELLSCHAF 47E D S 2 3 5 b G 5 OGEbfl^b b « S I E G SIEM EN S D L 1416B ^ ' 37 .160" Red, 4-Digit 16-Segment Plus Decimal ALPHANUMERIC Intelligent Display With Memory/Decoder/Driver l l So 5 5? Package Dimensions in Inches mm ^ .1 u - 16*02
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S23SbG5
1416B
16-Segment
DL 1416B
1416B
garry DIP SOCKET
garry socket
dishwasher siemens
siemens schematic codes
DL1416B
SN63
TP35
AN8080
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SAB82C206
Abstract: 82c206f 82C206
Text: 47E D • ÖE3SbOS 0031522 1 ■ SIEG SIEMENS AKTI ENGESELLSCHAF SAB 82C206 Integrated Peripheral Controller -r-'5'3r'b'S>-\5 P re lim in a ry • P rogram m able w a it states fo r the D M A cycle and internal register access • 8 MHz DMA clock • 16 Mbytes o f D M A address space
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82C206
PL-CC-84
fl23SbÃ
82C206-N
Q67120-P286
PL-CC-84)
SAB82C206
82c206f
82C206
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Untitled
Abstract: No abstract text available
Text: SIEMENS BLUE LINE 3 mm T1 LED LB 3331 Vorläufige Daten / Preliminary Data Besondere Merkmale • • • • • • • klares, farbloses 3-mm Kunststoffgehäuse als optischer Indikator einsetzbar in SiC-Technologie gefertigt in der Spektroskopie einsetzbar
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S23SbOS
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Untitled
Abstract: No abstract text available
Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!
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BFQ70
Q62702-F774
S23SbOS
0Db7117
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m43of
Abstract: TAA 761 siemens Package Outlines P-LCC DATE CODE 3535B aop 741 5MXE siemens lsl siemens 58 295 84 pin intel 80 B209 B-209
Text: SIEMENS ICs for Communications ISDN Echocancellation Circuit IEC-Q PEB 2091 Version 5.3 PEF 2091 Version 5.3 Data Sheet 01.99 DS 2 • flE3ShDS 013751t, b77 B PEB/F 2091 Revision History: Current Version: 01.99 Previous Version: None Page in previous Version
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PEB2091
PEF2091
013751t,
flE35b05
m43of
TAA 761
siemens Package Outlines P-LCC DATE CODE
3535B
aop 741
5MXE
siemens lsl
siemens 58 295 84 pin intel 80
B209
B-209
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HD-11310
Abstract: hd11310 HD-11330 HD11330 1133R HD11330 R HD1133R HD1131R HD-1131R HD1131-R
Text: SIE M EN S A K T I E N G E S E L L S C H A F 47E D S IE M E N S • 3 E 3 5 bO S 0 0 2 7 0* H 7 « S I E 6 HD1131R/1133R s u p e r - r e d HD11310/11330 YELLOW HD1131Y/1133Y GREEN HD1131G/1133G red 0.51" 13 mm SEVEN SEGMENT NUMERIC DISPLAY _
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HD1131R/1133R
HD11310/11330
HD1131Y/1133Y
HD1131G/1133G
HD1131R
HD1133R
HD11310
HD11330
HD1131Y
HD1133Y
HD-11310
HD-11330
1133R
HD11330 R
HD-1131R
HD1131-R
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inductor neosid
Abstract: CFWM 450 SIEMENS BST h 05 90 SMD CODE L01 45S15B sj27 PMB2430 SIEMENS BST F 05 8 PIN SMD IC L02 Neosid Inductor
Text: SIEMENS Narrowband FM Receiver PMB 2430 Preliminary Data Bipolar 1C Features • Double conversion heterodyne receiver with limiter/ demodulator Low current consumption Reduced external components Low-noise temperature compensated internal reference voltages
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PMB2430
DST33D
P-DSQ-28-4
fl235b05
inductor neosid
CFWM 450
SIEMENS BST h 05 90
SMD CODE L01
45S15B
sj27
PMB2430
SIEMENS BST F 05
8 PIN SMD IC L02
Neosid Inductor
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