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    FDMA3028N Search Results

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    FDMA3028N Price and Stock

    onsemi FDMA3028N

    MOSFET 2N-CH 30V 3.8A 6MICROFET
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    DigiKey FDMA3028N Reel
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    Rochester Electronics FDMA3028N 76,860 1
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    Flip Electronics FDMA3028N 920
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    Fairchild Semiconductor Corporation FDMA3028N

    Small Signal Field-Effect Transistor, 3.8A, 30V, 2-Element, N-Channel, MOSFET
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    Rochester Electronics FDMA3028N 46 1
    • 1 $0.3063
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    FDMA3028N Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    FDMA3028N Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 30V DUAL 6MICROFET Original PDF

    FDMA3028N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		PDF AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N

    FDMA3028N

    Abstract: No abstract text available
    Text: Dual N-Channel PowerTrench MOSFET 30 V, 3.8 A, 68 mΩ Features General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent


    Original     		PDF FDMA3028N FDMA3028N

    Untitled

    Abstract: No abstract text available
    Text: Dual N-Channel PowerTrench MOSFET 30 V, 3.8 A, 68 mΩ Features General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Dual N-Channel PowerTrench MOSFET 30 V, 3.8 A, 68 mΩ Features General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra-portable applications. It features two independent


    Original     		PDF