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    SIA910EDJ Price and Stock

    Vishay Siliconix SIA910EDJ-T1-GE3

    MOSFET 2N-CH 12V 4.5A PPAK8X8
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    DigiKey SIA910EDJ-T1-GE3 Cut Tape 18,421 1
    • 1 $0.95
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    SIA910EDJ-T1-GE3 Digi-Reel 18,421 1
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    SIA910EDJ-T1-GE3 Reel 18,000 3,000
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    RS SIA910EDJ-T1-GE3 Bulk 3,000
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    New Advantage Corporation SIA910EDJ-T1-GE3 12,000 1
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    Vishay Intertechnologies SIA910EDJ-T1-GE3

    Transistor MOSFET Array Dual N-CH 12V 4.5A 6-Pin PowerPAK SC-70 T/R - Bulk (Alt: 97W2599)
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    Avnet Americas SIA910EDJ-T1-GE3 Bulk 17 Weeks, 1 Days 1
    • 1 $0.55
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    SIA910EDJ-T1-GE3 Reel 16 Weeks 3,000
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    Mouser Electronics SIA910EDJ-T1-GE3 171,528
    • 1 $0.7
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    • 100 $0.325
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    Newark SIA910EDJ-T1-GE3 Bulk 56,437 1
    • 1 $0.191
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    TTI SIA910EDJ-T1-GE3 Reel 42,000 3,000
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    TME SIA910EDJ-T1-GE3 3,000
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    Avnet Asia SIA910EDJ-T1-GE3 19 Weeks 3,000
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    EBV Elektronik SIA910EDJ-T1-GE3 17 Weeks 3,000
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    Others SIA910EDJ-T1-GE3

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    Chip-Germany GmbH SIA910EDJ-T1-GE3 325
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    Vishay Huntington SIA910EDJ-T1-GE3

    MOSFET 2N-CH 12V 4.5A SC-70-6
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    Win Source Electronics SIA910EDJ-T1-GE3 1,292
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    SIA910EDJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA910EDJ-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 12V 4.5A SC-70-6 Original PDF

    SIA910EDJ Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA910EDJ Vishay Siliconix Dual N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () ID (A) 0.028 at VGS = 4.5 V 4.5 0.033 at VGS = 2.5 V 4.5 0.042 at Vgs = 1.8 V 4.5 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®


    Original     		SiA910EDJ SC-70 SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    TH 2267

    Abstract: marking CODE cfx marking CODE D2 SC-70-6 SiA910EDJ
    Text: New Product SiA910EDJ Vishay Siliconix Dual N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.028 at VGS = 4.5 V 4.5 0.033 at VGS = 2.5 V 4.5 0.042 at Vgs = 1.8 V 4.5 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		SiA910EDJ SC-70 2002/95/EC SC-70-6 18-Jul-08 TH 2267 marking CODE cfx marking CODE D2 PDF

    SiA910EDJ

    Abstract: No abstract text available
    Text: SPICE Device Model SiA910EDJ Vishay Siliconix Dual N-Channel 12 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		SiA910EDJ 18-Jul-08 PDF

    TH 2267

    Abstract: No abstract text available
    Text: New Product SiA910EDJ Vishay Siliconix Dual N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.028 at VGS = 4.5 V 4.5 0.033 at VGS = 2.5 V 4.5 0.042 at Vgs = 1.8 V 4.5 VDS (V) 12 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		SiA910EDJ SC-70 2002/95/EC SC-70-6 18-Jul-08 TH 2267 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiA910EDJ Vishay Siliconix Dual N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 a RDS(on) () ID (A) 0.028 at VGS = 4.5 V 4.5 0.033 at VGS = 2.5 V 4.5 0.042 at Vgs = 1.8 V 4.5 • TrenchFET Power MOSFET • Thermally Enhanced PowerPAK®


    Original     		SiA910EDJ SC-70 SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    3271-4

    Abstract: AN609 SiA910EDJ
    Text: SiA910EDJ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		SiA910EDJ AN609, 10-Nov-09 3271-4 AN609 PDF

    NX3008

    Abstract: IRLHS6242 SiA431DJ AON2408 SSM6J503NU IRLHS2242 AON2420 DMN3730UFB4 FDMA1028NZ FDMA3028N
    Text: Advanced cross reference list DFN* MOSFETs *DFN: discrete flat no-leads *in development, release in Q3 2012 0.6 0.6 1.1 1.1 1 1 1 0.9 0.9 1 0.9 0.53 0.53 0.9 0.9 0.45 0.45 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.6 0.6 0.5 0.5 1 1 1.5 0.95 0.95 1.05 1.05 0.95 1.05 1.1


    Original     		AON2240 AON2401 AON2405 AON2406 AON2407 AON2408 AON2409 AON2410 AON2420 AON2701 NX3008 IRLHS6242 SiA431DJ SSM6J503NU IRLHS2242 DMN3730UFB4 FDMA1028NZ FDMA3028N PDF

    SiA427DJ

    Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF