Si9430DY
Abstract: No abstract text available
Text: Si9430DY Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = -10 V "5.8 0.065 @ VGS = -6 V "4.9 0.090 @ VGS = -4.5 V "4.0 -20 S S S SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View G D D D D PĆChannel MOSFET
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Si9430DY
P-38889--Rev.
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si9405dy
Abstract: Si6447DQ Si9430DY
Text: Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "4.3 0.16 @ VGS = –4.5 V "3.4 Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ S S SO-8 NC 1 8
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Si9405DY
Si9430DY
Si6447DQ
S-47958--Rev.
15-Apr-96
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9430DY
Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S
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Si9430DY
Si4435DY
Si4953DY
Si6435DQ
S-51360--Rev.
18-Dec-96
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si9405dy
Abstract: Si6447DQ Si9430DY
Text: Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "4.3 0.16 @ VGS = –4.5 V "3.4 Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ S S SO-8 NC 1 8
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Si9405DY
Si9430DY
Si6447DQ
S-47958--Rev.
15-Apr-96
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Si9430DY
Abstract: Si4435DY Si4953DY Si6435DQ
Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ
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Si9430DY
Si4435DY
Si4953DY
Si6435DQ
S-47958--Rev.
15-Apr-96
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Si4435DY
Abstract: Si4953DY Si6435DQ Si9430DY
Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S
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Si9430DY
Si4435DY
Si4953DY
Si6435DQ
S-51360--Rev.
18-Dec-96
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Si9430DY
Abstract: No abstract text available
Text: Si9430DY Single P-Channel Enhancement Mode MOSFET General Description Features This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9430DY
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Untitled
Abstract: No abstract text available
Text: Si9430DY* Single P-Channel Enhancement Mode MOSFET General Description Features This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9430DY
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Si9430DY
Abstract: No abstract text available
Text: SPICE Device Model Si9430DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si9430DY
01-Jun-04
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si9405dy
Abstract: Si6447DQ Si9430DY
Text: Si9405DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –10 V "4.3 0.16 @ VGS = –4.5 V "3.4 Recommended upgrade: Si9430DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6447DQ S S SO-8 NC 1 8
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Si9405DY
Si9430DY
Si6447DQ
S-47958--Rev.
15-Apr-96
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Untitled
Abstract: No abstract text available
Text: Si9430DY Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 20 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET
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Si9430DY
08-Apr-05
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Si9430DY
Abstract: No abstract text available
Text: Si9430DY Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 20 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET
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Si9430DY
S-00652--Rev.
27-Mar-00
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Si9430DY
Abstract: Si4435DY Si4953DY Si6435DQ SI9430DY equivalent
Text: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ
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Si9430DY
Si4435DY
Si4953DY
Si6435DQ
S-47958--Rev.
15-Apr-96
SI9430DY equivalent
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Si9430DY
Abstract: No abstract text available
Text: SPICE Device Model Si9430DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si9430DY
05-Nov-99
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SI9430DY
Abstract: No abstract text available
Text: Si9430DY* Single P-Channel Enhancement Mode MOSFET General Description Features This P-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching
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Si9430DY
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SI943ODY
Abstract: RLS4148 146818A 146818 74HCT74 DATASHEET 74HCT08 74HCT74 SI9430DY RB400D SC300
Text: Élan SC300 and Élan™SC310 Microcontrollers Solution For Systems Using A Back-Up Battery Application Note The Élan™SC300 and ÉlanSC310 microcontrollers referred to in this document as ÉlanSC300 have a few issues that need to be addressed when using a back-up battery as a secondary power
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lanTMSC300
lanTMSC310
lanSC310
lanSC300)
lanSC300
46818A-compatible
SC300
SI943ODY
RLS4148
146818A
146818
74HCT74 DATASHEET
74HCT08
74HCT74
SI9430DY
RB400D
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mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local
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s134 p-mosfet
Abstract: 74hc260 Mitsumi D359T3 D359T3 schematic diagram inverter lcd monitor fujitsu 62256-10 BERG STRIP teac fd 235hf stepping motor mitsumi mitsumi floppy
Text: frt Page 1 Thursday, August 8, 1996 12:36 PM ÉlanSC300 Microcontroller Evaluation Board User’s Manual evalbd.book : frt Page 2 Thursday, August 8, 1996 12:14 PM ÉlanSC300 Microcontroller Evaluation Board, Revision 1.1 1996 by Advanced Micro Devices, Inc.
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lanSC300
s134 p-mosfet
74hc260
Mitsumi D359T3
D359T3
schematic diagram inverter lcd monitor fujitsu
62256-10
BERG STRIP
teac fd 235hf
stepping motor mitsumi
mitsumi floppy
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Mitsumi D359T3
Abstract: D359T3 Video Card AVED AV540 mitsumi floppy d359* mitsumi SCHEMATIC TRIDENT VGA board EPROM AMD s134 p-mosfet stepping motor mitsumi 62256-10
Text: evalbd.book : frt Page 1 Thursday, August 8, 1996 2:34 PM ÉlanSC310 Microcontroller Evaluation Board User’s Manual evalbd.book : frt Page 2 Thursday, August 8, 1996 2:34 PM ÉlanSC310 Microcontroller Evaluation Board, Revision 1.0 1996 by Advanced Micro Devices, Inc.
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lanSC310
227ing
Mitsumi D359T3
D359T3
Video Card AVED AV540
mitsumi floppy
d359* mitsumi
SCHEMATIC TRIDENT VGA board
EPROM AMD
s134 p-mosfet
stepping motor mitsumi
62256-10
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LT1492
Abstract: LT1493 g0732 SI9410DY
Text: LT1492/LT1493 5MHz, 3V/µs, Low Power Single Supply, Dual and Quad Precision Op Amps U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Gain-Bandwidth Product: 5MHz Typ Slew Rate: 3V/µs Typ Low Supply Current per Amplifier: 0.55mA Max
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LT1492/LT1493
100nA
500V/mV
14pA/Hz
LT1490/LT1491
200kHz
LT1498/LT1499
10MHz
14923f
LT1492
LT1493
g0732
SI9410DY
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ9405DY Se m ic o n d u c to r s P-Channel Enhancement-Mode MOSFET Product Summary V d s V rDS(on) (Q ) 20 I d (A) 0.10 @ VGS = -1 0 V ±4.3 0.16 @ Vc s = -4.5 V ±3.4 Recommended upgrade: Si9430DY Lower profile/smaller size— see LITE FOOT equivalent: Si6447DQ
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9405DY
Si9430DY
Si6447DQ
S-47958--
15-Apr-96
S2SM735
0017flin
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SI9405DY
Abstract: 6T1D
Text: SÌ9405DY P-Channel Enhancement-Mode MOSFET Product Summary V d s V 20 r DS(on) (ß ) I d (A) 0.10 @ Vos = -1 0 V ± 4.3 0.16 @ Vg s = ^ . 5 V ± 3.4 Recommended upgrade: Si9430DY Lower profile!smaller size—see LITE FOOT equivalent: Si6447DQ S Q S Q
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9405DY
Si9430DY
Si6447DQ
S-47958--Rev.
15-Apr-96
SI9405DY
6T1D
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P3482
Abstract: No abstract text available
Text: T e m ic SÌ9405DY P-Channel Enhancement-Mode MOSFET Product Summary rDS on (ß ) Id (A) 0.10 @ Vos = - i o v ±4.3 0.16 @ VGs = -4.5 V ±3.4 VDS(V) -2 0 Recommended, upgrade: Si9430D Y L ow er profile I sm aller size— see L IT E F O O T equivalent: Si6447D Q
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9405DY
Si9430D
Si6447D
P-34826--
9405DY_
P3482
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T0252AA
Abstract: T0263 IRF7205 BSS83 IRFR5305 T0-220AB IRF7204 IRF7304 SI4465DY SI4963DY
Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4465D Y SI4965D Y IR F7204 IR F7304 SI4963D Y SI9430D Y SI9435D Y SI9933A D Y SI9953D Y IR F7205 IR F7406 IR F7416 S I4431A D Y
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SI4465DY
SI4965DY
IRF7204
IRF7304
SI4963DY
SI9430DY
SI9435DY
SI9933ADY
SI9953DY
IRF7205
T0252AA
T0263
BSS83
IRFR5305
T0-220AB
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